Abstract: In an embodiment, an optoelectronic semiconductor component includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, wherein a respective semiconductor material of the first and second semiconductor layers are each a compound semiconductor material including a first, a second and a third composition element, and a second contact region configured to electrically contact the second semiconductor layer, wherein the first semiconductor layer is patterned and arranged over the second semiconductor layer, wherein the second contact region is arranged between patterned regions of the first semiconductor layer, wherein the second contact region comprises a second metallic contact layer and a semiconductor contact layer between the second metallic contact layer and the second semiconductor layer, wherein a semiconductor material of the semiconductor contact layer includes the first, second and third composition elements, and wherein a concentration

Abstract: In an embodiment, an optoelectronic semiconductor component includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, wherein a respective semiconductor material of the first and second semiconductor layers are each a compound semiconductor material including a first, a second and a third composition element, and a second contact region configured to electrically contact the second semiconductor layer, wherein the first semiconductor layer is patterned and arranged over the second semiconductor layer, wherein the second contact region is arranged between patterned regions of the first semiconductor layer, wherein the second contact region comprises a second metallic contact layer and a semiconductor contact layer between the second metallic contact layer and the second semiconductor layer, wherein a semiconductor material of the semiconductor contact layer includes the first, second and third composition elements, and wherein a concentration

Abstract: A semiconductor laser includes a contact carrier having electrical contact surfaces to electrically contact a semiconductor layer sequence, an electrical connecting line from a main side of the semiconductor layer sequence facing away from the contact carrier and a plurality of capacitors, wherein the connecting line is located on or in the semiconductor layer sequence, at least two of the capacitors are present, the capacitances of which differ by at least a factor of 50, the capacitor having a smaller capacitance is configured to supply the active zone with current immediately after a switch-on operation, and the capacitor having the larger capacitance is configured to a subsequent current supply, the capacitor having the smaller capacitance directly electrically connects to the active zone, and a resistor is arranged between the capacitor having the larger capacitance and the active zone, the resistor having a resistance of at least 100 ?.