Abstract: The invention concerns methods for preparing a nanoporous silicon nitride membrane comprising (i) ablating portions of at least one side of the membrane with an electron beam to reduce the thickness of the portions to between about 0.5 and 5 nanometers, and (ii) penetrating subportions of the ablated portions of the membrane with an electron beam to form nanopores having internal surfaces which are predominantly silicon rich compared to unablated portions of the membrane.

Abstract: Provided are nanopore devices that include a hafnium oxide coating on the pores of the devices. Such devices exhibit improved stability, especially when in a salt solution environment. Also provided are related methods.

Abstract: Disclosed are insulated nanoelectrode associated with nanopores, useful in macromolecular analysis devices. Also disclosed are related methods of fabrication and use.

Abstract: Provided are graphene-based nanopore and nanostructure devices, which devices may include an insulating layer disposed atop the graphene, which can be in a planar shape or nanostructured into a ribbon or other shapes, containing a single graphene layer or several layers. Graphene layers and nanostructures can be placed nearby horizontally or stacked vertically. Also provided are related methods of fabricating and processing such devices and also methods of using such devices in macromolecular analysis.

Abstract: Provided are suspended solid-state membranes on glass chips with improved capacitance. The membranes include a first cavity formed in the thickness of the glass membrane, the first cavity having a width that increases along the direction extending from the first surface of the membrane to the second surface of the membrane, a first membrane surmounting at least a portion of the first surface of the glass membrane, the first membrane having a pore formed therethrough, and the pore of the first membrane being in fluid communication with the first cavity of the glass membrane. Also provided are related methods of fabricating the disclosed chips and of using the disclosed chips for macromolecular analysis.

Abstract: The present disclosure provides black phosphorous devices with use in, e.g., inter alia, molecular analysis applications. A device may comprise a region of black phosphorous with, e.g., 1 to 10 layers and having a pore formed through the layer or layers. The black phosphorous may be supported by a support membrane. Also provided are related methods of molecular analysis and methods of fabricating the devices.

Abstract: Provided are solid-state nanopore platforms for fast, electronic, label-free and high-resolution analysis of biomolecules.

Abstract: The invention concerns methods for preparing a nanoporous silicon nitride membrane comprising (i) ablating portions of at least one side of the membrane with an electron beam to reduce the thickness of the portions to between about 0.5 and 5 nanometers, and (ii) penetrating subportions of the ablated portions of the membrane with an electron beam to form nanopores having internal surfaces which are predominantly silicon rich compared to unablated portions of the membrane.

Abstract: Provided are suspended solid-state membranes on glass chips with improved capacitance. Also provided are related methods of fabricating and using the disclosed chips.

Abstract: Provided are solid-state nanopore platforms for fast, electronic, label-free and high-resolution analysis of biomolecules.

Abstract: Disclosed are solid-state nanopore devices having pores of nanometer-scale thickness, which ultrathin (e.g., less than 10 nm thick) pores enable devices having improved resolution. Also provided are methods of fabricating such devices and of using such devices. The invention also provides nanometer-thick membranes and related methods of fabricating such membranes, which membranes are useful in high resolution microscopy applications. Further disclosed are devices for detection of analytes—including miRNA—that may be small in size and may also be present in only small quantities.

Abstract: Disclosed are insulated nanoelectrode associated with nanopores, useful in macromolecular analysis devices. Also disclosed are related methods of fabrication and use.

Abstract: Disclosed herein are methods for assembling nanostructures. The assembling methods include contacting the plurality of nanostructures to a substrate having one or more discontinuities. At least a portion of the plurality of nanostructures assemble adjacent to the discontinuity, the assembled nanostructures including at least one nanostructure having a bridging, molecule. Devices, such as field-effect transistors, are also disclosed.

Abstract: Provided are graphene-based nanopore and nanostructure devices, which devices may include an insulating layer disposed atop the graphene, which can be in a planar shape or nanostructured into a ribbon or other shapes, containing a single graphene layer or several layers. Graphene layers and nanostructures can be placed nearby horizontally or stacked vertically. Also provided are related methods of fabricating and processing such devices and also methods of using such devices in macromolecular analysis.

Abstract: Disclosed are solid-state nanopore devices having pores of nanometer-scale thickness, which ultrathin (e.g., less than 10 nm thick) pores enable devices having improved resolution. Also provided are methods of fabricating such devices and of using such devices. The invention also provides nanometer-thick membranes and related methods of fabricating such membranes, which membranes are useful in high resolution microscopy applications. Further disclosed are devices for detection of analytes—including miRNA—that may be small in size and may also be present in only small quantities.

Abstract: Provided are beam ablation lithography methods capable of removing and manipulating material at the nanoscale. Also provided are nanoscale devices, nanogap field effect transistors, nano-wires, nano-crystals and artificial atoms made using the disclosed methods.

Abstract: Disclosed are methods of fabricating nanogaps and various devices composed of nanogaps. The nanogap devices disclosed herein can be used as in a number of electronic, photonic and quantum mechanical devices, including field-effect transistors and logic circuits.

Abstract: Disclosed are compositions including semiconducting polymers and quantum dot nanocrystals. Also disclosed are optoelectronic devices prepared from semiconducting polymers and quantum dot nanocrystals. Also are disclosed methods of increasing the quantum efficiency in optoelectronic devices and methods of generating a photocurrent.

Abstract: Memory devices and recordable media are disclosed that take advantage of memory effects in the electronic transport in CdSe nanocrystal (NC) quantum dot arrays. Conduction through a NC array can be reduced with a negative voltage and then restored with a positive voltage. Light can also be used to restore or even increase the NC array conduction. The switching of the conduction in CdSe NC arrays and found the behavior to be highly sensitive to the value and duration of the laser and voltage pulses.

Abstract: Disclosed are compositions including semiconducting polymers and quantum dot nanocrystals. Also disclosed are optoelectronic devices prepared from semiconducting polymers and quantum dot nanocrystals. Also are disclosed methods of increasing the quantum efficiency in optoelectronic devices and methods of generating a photocurrent.