Patents by Inventor Marika Juppo

Marika Juppo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Heart monitoring system
    Patent number: 10178964
    Abstract: A device that includes a sensor of angular motion configured to obtain an angular ballistograph signal indicative of rotational movement of a chest of a subject. Signal processing means are configured to generate from this angular ballistocardiograph signal measured values of an output parameter, which is indicative of cardiac operation of the subject.
    Type: Grant
    Filed: September 10, 2014
    Date of Patent: January 15, 2019
    Assignees: Murata Manufacturing Co., Ltd., Precordior Oy
    Inventors: Ulf Meriheinä, Marika Juppo, Tero Koivisto, Mikko Pänäälä, Kati Sairanen, Markus Grönholm
  • HEART MONITORING SYSTEM
    Publication number: 20160220152
    Abstract: A device that includes a sensor of angular motion configured to obtain an angular ballistograph signal indicative of rotational movement of a chest of a subject. Signal processing means are configured to generate from this angular ballistocardiograph signal measured values of an output parameter, which is indicative of cardiac operation of the subject.
    Type: Application
    Filed: September 10, 2014
    Publication date: August 4, 2016
    Inventors: Ulf MERIHEINÄ, Marika JUPPO, Tero KOIVISTO, Mikko PÄNÄÄLÄ, Kati SAIRANEN, Markus GRÖNHOLM
  • Method for preparing metal nitride thin films
    Patent number: 6706115
    Abstract: Methods for producing metal nitride thin layers having low resistivity by means of atomic layer deposition processes comprising alternate surface reactions of metal and nitrogen source materials include using nitrogen source materials that have better reducing properties than ammonia and 1,1-dimethyl hydrazine. Suitable compounds for that purpose include those in which a hydrocarbon group bound to nitrogen, when dissociating in a homolytic manner, generates a radical that serves as a reducing agent and reacts further to generate atomic hydrogen. The nitride thin layers produced are especially suitable for use as diffusion barrier layers in integrated circuits.
    Type: Grant
    Filed: March 15, 2002
    Date of Patent: March 16, 2004
    Assignee: ASM International N.V.
    Inventors: Markku Leskelä, Mikko Ritala, Petra Alén, Marika Juppo
  • Method for preparing metal nitride thin films
    Publication number: 20020182320
    Abstract: An object of the invention is to produce metal nitride thin layers having low resistivity by means of the ALD method. In the method according to the invention, compounds that are bbetter reducing properties than the known ammonia and 1,1-dimethyl hydrazine are used as nitrogen source. Suitable compounds for that purpose are those in which a hydrocarbon group bound to nitrogen, when dissociating in a homolytic manner, generates a radical that serves as a reducing agent and reacts further to generate atomic hydrogen. The nitride thin layers produced according to the invention are especially suitable for use as diffusion barrier layers in integrated circuits.
    Type: Application
    Filed: March 15, 2002
    Publication date: December 5, 2002
    Inventors: Markku Leskela, Mikko Ritala, Petra Alen, Marika Juppo