Abstract: An object of the present invention is to provide an antiviral aerosol composition that has high stability and can be aerosol-applied without causing nozzle clogging or the like, the antiviral aerosol composition being capable of forming a coating film whose copper-doped silica exhibits excellent antiviral properties and which is firmly retained on the surface of an article; a coating film formed from the antiviral aerosol composition; and an article comprising the coating film. The antiviral aerosol composition of the present invention as a means for resolution comprises (1) a copper-doped silica, (2) a vinylpyrrolidone unit-containing polymer, (3) an alcohol-based solvent or a mixed solvent of an alcohol-based solvent and water, and (4) a propellant. The coating film of the present invention is formed from the antiviral aerosol composition of the present invention. The article of the present invention comprises the coating film of the present invention.

Abstract: An object of the present invention is to provide an antiviral coating composition being capable of forming a coating film whose metal-doped silica exhibits excellent antiviral properties and which is firmly retained on the surface of an article; a coating film formed from the antiviral coating composition; and an article comprising the coating film. The antiviral coating composition of the present invention as a means for resolution comprises (1) a metal-doped silica, (2) a vinylpyrrolidone unit-containing polymer, and (3) an alcohol-based solvent or a mixed solvent of an alcohol-based solvent and water. The coating film of the present invention is formed from the antiviral coating composition of the present invention. The article of the present invention comprises the coating film of the present invention.

Abstract: An object of the present invention is to provide a metal-doped porous silica that can be blended into an article, for example, a cosmetic product such as a perm treatment agent, and kept stably dispersed therein. The metal-doped porous silica of the present invention as a means for resolution is surface-modified with a vinylpyrrolidone unit-containing polymer. As specific examples of vinylpyrrolidone unit-containing polymers, a copolymer of vinylpyrrolidone and dimethylaminoethyl methacrylate, polyvinylpyrrolidone, and the like can be mentioned.

Abstract: A porous silica having at least one metal X selected from the group consisting of Mn, Cu and Fe.

Abstract: To provide a porous silica which is capable of effectively eliminating odors of methyl mercaptan, hydrogen sulfide, nonenal and the like, said odors being difficult to be eliminated by a silica porous material that contains no metal. A porous silica containing particles that are provided with primary pores, wherein the particles contain a metal containing substance complex having a particle size of 1-100 nm. This porous silica has a specific surface area of 500 m2/g or more.

Abstract: To provide a porous silica which is capable of effectively eliminating odors of methyl mercaptan, hydrogen sulfide, nonenal and the like, said odors being difficult to be eliminated by a silica porous material that contains no metal. A porous silica containing particles that are provided with primary pores, wherein the particles contain a metal containing substance complex having a particle size of 1-100 nm. This porous silica has a specific surface area of 500 m2/g or more.

Abstract: A printed wiring board includes an interlayer resin insulation layer, a pad structure formed on the interlayer resin insulation layer and positioned to mount a semiconductor device, and a solder-resist layer formed on the interlayer resin insulation layer and having an opening portion exposing a portion of the pad structure from the solder-resist layer. The opening portion of the solder-resist layer has a bottom surface such that the bottom surface of the opening portion is exposing an upper surface and a portion of a side surface of the pad structure.

Abstract: A printed wiring board includes an interlayer resin insulation layer, a pad structure formed on the interlayer resin insulation layer and positioned to mount a semiconductor device, and a solder-resist layer formed on the interlayer resin insulation layer and having an opening portion exposing a portion of the pad structure from the solder-resist layer. The opening portion of the solder-resist layer has a bottom surface such that the bottom surface of the opening portion is exposing an upper surface and a portion of a side surface of the pad structure.

Abstract: A polycrystalline thin film of MgO is formed on a substrate by an ion sputtering process wherein the thin film is obtained by irradiating a target with an ion beam to dislodge particles from the target and deposit the particles on the substrate. The film is preferably formed in an atmosphere at a reduced pressure of 3.0×10−2 Pa or lower while keeping the substrate temperature at 300° C. or lower.

Abstract: A polycrystalline thin film B consisting mainly of oxide crystal grains 20 which have a crystal structure of a Type C rare earth oxide represented by one of the formulas Y2O3, Sc2O3, Nd2O3, Sm2O3, Eu2O3, Gd2O3, Tb2O3, Dy2O3, Ho2O3, Er2O3, Yb2O3, Lu2O3, and Pm2O3 formed on a film forming surface of a polycrystalline substrate A wherein grain boundary inclination angles between the corresponding crystal axes of different crystal grains in the polycrystalline thin film along a plane parallel to the film forming surface of the polycrystalline substrate are controlled within 30 degrees.

Abstract: The polycrystalline thin film is made of a composite oxide of a cubic crystal system which has a pyrochlore type crystalline structure of a composition represented as either AZrO or AHfO (A in the formula represents a rare earth element selected from among Y, Yb, Tm, Er, Ho, Dy, Eu, Gd, Sm, Nd, Pr, Ce and La) formed on the film forming surface of the polycrystalline substrate, wherein the grain boundary misalignment angle between the same crystal axes of different crystal grains in the polycrystalline thin film along a plane parallel to the film forming surface of the polycrystalline substrate are controlled within 30°.

Abstract: A polycrystalline thin film of MgO is formed on a substrate by an ion sputtering process wherein the thin film is obtained by irradiating a target with an ion beam to dislodge particles from the target and deposit the particles on the substrate. The film is preferably formed in an atmosphere at a reduced pressure of 3.0×10−2 Pa or lower while keeping the substrate temperature at 300° C. or lower.

Abstract: A process for the production of a blood separating agent is disclosed which comprises supplying a mixture solution containing (a) a separation layer forming high molecular weight compound as the main component and (b) a thixotropy-providing agent selected from the group consisting of inorganic fine particles and organic gelling agents into a cylinder block of a homogenizer having the cylinder block equipped with a plunger capable of performing reciprocating movement and a valve body which is connected thereto and equipped with a valve member, a valve sheet and an impact ring, and applying a compressive shearing stress to the mixture in said homogenizer at such a temperature that viscosity of the solution becomes 1.times.10.sup.4 centipoises or less, thereby obtaining a blood separating agent in the form of a dispersion or a uniform gel. A blood separating agent having excellent storage stability can be obtained with improved productivity per unit time.

Abstract: A method and an apparatus for generating sentences capable of generating more natural and easily comprehensible sentences by incorporating the selection of an appropriate choice for the form of expression or the order of words from a number of possible candidates in a process of sentence construction. In the apparatus, conceptual structures to be utilized as elements of sentences to be generated are stored; rules to be followed in generating sentences are stored; and sentences are generated from the stored conceptual structures in accordance with the stored rules by utilizing sizes of partial structures of the conceptual structures specified by the stored rules to determine a sentence structure of the sentence to be generated.