Patents by Inventor Mariko Urushibara

Mariko Urushibara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for polishing semiconductor device
    Patent number: 6576552
    Abstract: To provide a method having stable high polishing efficiency in the CMP of an LSI wafer and means for reducing the amount of use of consumable items such as a polishing liquid and a pad, an electric field is applied to the abrasive grains on a pad to attract the abrasive grains into a diffusion layer in the polishing liquid solvent near the surface of the pad, thereby holding the abrasive grains in the diffusion layer.
    Type: Grant
    Filed: March 25, 2002
    Date of Patent: June 10, 2003
    Assignee: Hitachi, Ltd.
    Inventors: Hiroyuki Kojima, Hidemi Sato, Tetsuo Ookawa, Mariko Urushibara
  • Method for polishing semiconductor device
    Patent number: 6489243
    Abstract: To provide a method having stable high polishing efficiency in the CMP of an LSI wafer and means for reducing the amount of use of consumable items such as a polishing liquid and a pad, an electric field is applied to the abrasive grains on a pad to attract the abrasive grains into a diffusion layer in the polishing liquid solvent near the surface of the pad, thereby holding the abrasive grains in the diffusion layer.
    Type: Grant
    Filed: February 5, 2002
    Date of Patent: December 3, 2002
    Assignee: Hitachi, Ltd.
    Inventors: Hiroyuki Kojima, Hidemi Sato, Tetsuo Ookawa, Mariko Urushibara
  • Method for polishing semiconductor device
    Publication number: 20020098698
    Abstract: To provide a method having stable high polishing efficiency in the CMP of an LSI wafer and means for reducing the amount of use of consumable items such as a polishing liquid and a pad, an electric field is applied to the abrasive grains on a pad to attract the abrasive grains into a diffusion layer in the polishing liquid solvent near the surface of the pad, thereby holding the abrasive grains in the diffusion layer.
    Type: Application
    Filed: March 25, 2002
    Publication date: July 25, 2002
    Inventors: Hiroyuki Kojima, Hidemi Sato, Tetsuo Ookawa, Mariko Urushibara
  • Method for polishing semiconductor device
    Patent number: 6420265
    Abstract: To provide a method having stable high polishing efficiency in the CMP of an LSI wafer and means for reducing the amount of use of consumable items such as a polishing liquid and a pad, an electric field is applied to the abrasive grains on a pad to attract the abrasive grains into a diffusion layer in the polishing liquid solvent near the surface of the pad, thereby holding the abrasive grains in the diffusion layer.
    Type: Grant
    Filed: May 14, 1999
    Date of Patent: July 16, 2002
    Assignee: Hitachi, Ltd.
    Inventors: Hiroyuki Kojima, Hidemi Sato, Tetsuo Ookawa, Mariko Urushibara
  • Method for polishing semiconductor device
    Publication number: 20020086538
    Abstract: To provide a method having stable high polishing efficiency in the CMP of an LSI wafer and means for reducing the amount of use of consumable items such as a polishing liquid and a pad, an electric field is applied to the abrasive grains on a pad to attract the abrasive grains into a diffusion layer in the polishing liquid solvent near the surface of the pad, thereby holding the abrasive grains in the diffusion layer.
    Type: Application
    Filed: February 5, 2002
    Publication date: July 4, 2002
    Inventors: Hiroyuki Kojima, Hidemi Sato, Tetsuo Ookawa, Mariko Urushibara