Abstract: An energy production device may include: a supply device for hydrocarbon gas; energy converter configured to convert the energy supplied by the H2 into electrical, thermal, and/or mechanical energy; H2 producer fluidically between the supply device and the energy converter; the H2 producer including a plasmalysis reactor configured to generate plasmalysis of the hydrocarbon gas so as to produce at least one dihydrogen directed towards the energy converter; a controller configured to generate a control instruction for the H2 producer with information on H2 present in a H2 distribution area arranged fluidically between the plasmalysis reactor and the energy converter, the H2 distribution area including a storage assembly at the plasmalysis reactor outlet and hydraulically connected to the plasmalysis reactor and energy converter, the storage assembly including a compression device, storage tank, and expander, the compression device being positioned to transfer H2 exiting the plasmalysis reactor into the storage

Abstract: A dihydrogen production and delivery unit for a dihydrogen consumer, may include at least one gaseous hydrocarbon supply device, at least one microwave plasma plasmalysis reactor configured to generate, at a pressure equal to atmospheric pressure +/?15%, plasmalysis of the gaseous hydrocarbon supplied by the supply device and which produces, by carbon-free production, at least dihydrogen and solid carbon, the production and delivery unit comprising at least one storage device for the produced dihydrogen and at least one device for delivering to the consumer the dihydrogen stored in the storage device.

Abstract: The present disclosure relates to an elementary device for producing a plasma. The elementary device includes a coaxial applicator of microwave power that includes a conductive central core, a conductive external shield surrounding the central core, a medium located between the central core and the shield to propagate microwave energy, and an insulating body. The elementary device further includes a system to couple to a microwave generator and is disposed at the shield. The shield has a proximal end plugged with the insulating body made of dielectric material that is transparent to the microwave energy. The insulating body has an external surface configured to contact and excite a gas located in the interior of a chamber. The insulating body extends exterior wise from the shield and its external surface is nonplanar and protrudes from the shield. The outside diameter of the body decreases from the shield to its tip.

Abstract: An elementary device of the present disclosure includes a coaxial applicator that includes a connector disposed at a distal end of the applicator, a shielding, a microwave energy propagation medium disposed between a central core and the shielding, and an insulating body disposed at a proximal end of the applicator. The shielding surrounds the central core and has a bottom wall provided at the distal end. The connector includes an external conductor connected to the shielding and an internal conductor connected to the central core. The connector is disposed at the bottom wall with the external conductor fixed to the bottom wall and the internal conductor linked to a connecting element that extends through the bottom wall and parallel to the main axis with a predefined spacing provided between the central core and a free end connected to the central core at a predefined distance from the bottom wall.

Abstract: The present disclosure relates to an elementary device for producing a plasma. The elementary device includes a coaxial applicator of microwave power that includes a conductive central core, a conductive external shield surrounding the central core, a medium located between the central core and the shield to propagate microwave energy, and an insulating body. The elementary device further includes a system to couple to a microwave generator and is disposed at the shield. The shield has a proximal end plugged with the insulating body made of dielectric material that is transparent to the microwave energy. The insulating body has an external surface configured to contact and excite a gas located in the interior of a chamber. The insulating body extends exterior wise from the shield and its external surface is nonplanar and protrudes from the shield. The outside diameter of the body decreases from the shield to its tip.

Abstract: An elementary device of the present disclosure includes a coaxial applicator that includes a connector disposed at a distal end of the applicator, a shielding, a microwave energy propagation medium disposed between a central core and the shielding, and an insulating body disposed at a proximal end of the applicator. The shielding surrounds the central core and has a bottom wall provided at the distal end. The connector includes an external conductor connected to the shielding and an internal conductor connected to the central core. The connector is disposed at the bottom wall with the external conductor fixed to the bottom wall and the internal conductor linked to a connecting element that extends through the bottom wall and parallel to the main axis with a predefined spacing provided between the central core and a free end connected to the central core at a predefined distance from the bottom wall.

Abstract: The invention relates to a facility (1) for microwave treatment of a load, including: at least one application device (30); at least one solid-state generator (4) in the field of microwaves, connected to at least one application device by a means for guiding (5) the electromagnetic wave; at least one frequency adjustment system (40) designed for adjusting the frequency of the wave produced by the corresponding generator (4); a measurement system (31) for the or each application device (30), designed for measuring the power reflected PR(i) by the application device (30); an automated control means (6) connected to each frequency adjustment system (40) and to each measurement system (31) in order to control the adjustment of the frequency f(i) of the electromagnetic wave according to the reflected power, in order to adjust the reflected power PR(i) and/or to adjust the transmitted power PT(i).

Abstract: A plasma abatement device comprises a gas chamber having a gas inlet for receiving a gas to be treated by the device and a gas outlet, at least part of the inner surface of the gas chamber being formed from, or coated with, an electrically conductive material that is resistant to corrosion during treatment of a gas containing a halocompound and water vapor.

Abstract: In a method of operating a microwave plasma abatement apparatus comprising a microwave generator, and a gas chamber for receiving microwave energy from the microwave generator and within which a plasma is generated using the microwave energy, the amount of microwave energy that is not absorbed within the gas chamber is monitored, and the power of the microwave energy generated by the microwave generator is adjusted in dependence on the monitored microwave energy.

Abstract: The invention relates to a facility (1) for microwave treatment of a load, including: at least one application device (30); at least one solid-state generator (4) in the field of microwaves, connected to at least one application device by a means for guiding (5) the electromagnetic wave; at least one frequency adjustment system (40) designed for adjusting the frequency of the wave produced by the corresponding generator (4); a measurement system (31) for the or each application device (30), designed for measuring the power reflected PR(i) by the application device (30); an automated control means (6) connected to each frequency adjustment system (40) and to each measurement system (31) in order to control the adjustment of the frequency f(i) of the electromagnetic wave according to the reflected power, in order to adjust the reflected power PR(i) and/or to adjust the transmitted power PT(i).

Abstract: A microwave plasma reactor (10) comprises a reactor chamber, a microwave resonant cavity (14) located within the reactor chamber, a waveguide (16) for conveying microwave radiation to the resonant cavity, the waveguide having a convergent tapered portion, means for forming an electromagnetic standing wave within the resonant cavity from the microwave radiation for initiating and sustaining a plasma within the resonant cavity, the resonant cavity having a gas inlet and a gas outlet, and conduit means extending from the gas outlet for containing a plasma conveyed from the resonant cavity with a gas flowing from the gas inlet to the gas outlet.

Abstract: A method is described for treating gas exhaust from a polysilicon etch process, which uses a plasma abatement device to treat the gas. The device comprises a stainless steel gas chamber having a gas inlet for receiving the gas and a gas outlet. As the gas may contain a halocompound and water vapor, the chamber is heated to a temperature that inhibits adsorption of water on the surface within the chamber, thereby inhibiting corrosion of the gas chamber. The gas is then conveyed to the gas chamber for treatment, and the temperature of the chamber is maintained above said temperature during treatment of the gas.

Abstract: In a method of treating a gas exhausted from a process chamber, the exhaust gas is conveyed to a vacuum pump (20) and a nitrogen purge gas is added to the exhaust gas for pumping with the exhaust gas. Gas exhaust from the pump is conveyed to an abatement device (28) for abating the exhaust gas. The amount of purge gas added to the exhaust gas is adjusted in response to a variation of the composition of the exhaust gas, or the composition of the gas supplied to the process chamber, to optimise the abatement of the exhaust gas.

Abstract: A plasma reactor (10) comprises a microwave resonant cavity (12) having a gas inlet (18) and a gas outlet (20), a waveguide (14) for conveying microwave radiation to the resonant cavity, and a plasma torch (40) for injecting into the resonant cavity a plasma stream containing ions for reacting with a gas flowing from the gas inlet (18) to the gas outlet (20).

Abstract: A method is described for treating gas exhaust from a polysilicon etch process, which uses a plasma abatement device to treat the gas. The device comprises a stainless steel gas chamber having a gas inlet for receiving the gas and a gas outlet. As the gas may contain a halocompound and water vapour, the chamber is heated to a temperature that inhibits adsorption of water on the surface within the chamber, thereby inhibiting corrosion of the gas chamber. The gas is then conveyed to the gas chamber for treatment, and the temperature of the chamber is maintained above said temperature during treatment of the gas.

Abstract: In a method of operating a microwave plasma abatement apparatus comprising a microwave generator, and a gas chamber for receiving microwave energy from the microwave generator and within which a plasma is generated using the microwave energy, the amount of microwave energy that is not absorbed within the gas chamber is monitored, and the power of the microwave energy generated by the microwave generator is adjusted in dependence on the monitored microwave energy.

Abstract: A plasma abatement device comprises a gas chamber having a gas inlet for receiving a gas to be treated by the device and a gas outlet, at least part of the inner surface of the gas chamber being formed from, or coated with, an electrically conductive material that is resistant to corrosion during treatment of a gas containing a halocompound and water vapour.

Abstract: A plasma reactor (10) comprises a microwave resonant cavity (12) having a gas inlet (18) and a gas outlet (20), a waveguide (14) for conveying microwave radiation to the resonant cavity, and a plasma torch (40) for injecting into the resonant cavity a plasma stream containing ions for reacting with a gas flowing from the gas inlet (18) to the gas outlet (20).