Patents by Inventor Marilyn Kamna

Marilyn Kamna has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Photomask frame modification to eliminate process induced critical dimension control variation
    Patent number: 6692878
    Abstract: An apparatus comprising a mask having an active device area and a moat. The moat substantially surrounds the mask active device area and has a width greater than a plasma specie diffusional length. A method comprising depositing a layer of resist on a mask substrate having transparent and opaque layers; and exposing the resist layer to radiation. The radiation is patterned to produce features within an active device area. The radiation is also patterned to produce a moat substantially surrounding the active device area having a width greater than a plasma specie diffusional length.
    Type: Grant
    Filed: August 15, 2002
    Date of Patent: February 17, 2004
    Assignee: Intel Corporation
    Inventors: Wilman Tsai, Marilyn Kamna, Frederick Chen, Jeff Farnsworth
  • Photomask frame modification to eliminate process induced critical dimension control variation
    Publication number: 20030008221
    Abstract: An apparatus comprising a mask having an active device area and a moat. The moat substantially surrounds the mask active device area and has a width greater than a plasma specie diffusional length. A method comprising depositing a layer of resist on a mask substrate having transparent and opaque layers; and exposing the resist layer to radiation. The radiation is patterned to produce features within an active device area. The radiation is also patterned to produce a moat substantially surrounding the active device area having a width greater than a plasma specie diffusional length.
    Type: Application
    Filed: August 15, 2002
    Publication date: January 9, 2003
    Inventors: Wilman Tsai, Marilyn Kamna, Frederick Chen, Jeff Farnsworth
  • Photomask frame modification to eliminate process induced critical dimension control variation
    Patent number: 6485869
    Abstract: An apparatus comprising a mask having an active device area and a moat. The moat substantially surrounds the mask active device area and has a width greater than a plasma specie diffusional length. A method comprising depositing a layer of resist on a mask substrate having transparent and opaque layers; and exposing the resist layer to radiation. The radiation is patterned to produce features within an active device area. The radiation is also patterned to produce a moat substantially surrounding the active device area having a width greater than a plasma specie diffusional length.
    Type: Grant
    Filed: October 1, 1999
    Date of Patent: November 26, 2002
    Assignee: Intel Corporation
    Inventors: Wilman Tsai, Marilyn Kamna, Frederick Chen, Jeff Farnsworth