Patents by Inventor Marina Baryshnikova

Marina Baryshnikova has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods for improved III/V nano-ridge fabrication on silicon
    Patent number: 11655558
    Abstract: A method for growing at least one III/V nano-ridge on a silicon substrate in an epitaxial growth chamber. The method comprises: patterning an area on a silicon substrate thereby forming a trench on the silicon substrate; growing the III/V nano-ridge by initiating growth of the III/V nano-ridge in the trench, thereby forming and filling layer of the nano-ridge inside the trench, and by continuing growth out of the trench on top of the filling layer, thereby forming a top part of the nano-ridge, wherein at least one surfactant is added in the chamber when the nano-ridge is growing out of the trench.
    Type: Grant
    Filed: August 18, 2020
    Date of Patent: May 23, 2023
    Assignee: Imec VZW
    Inventors: Bernardette Kunert, Robert Langer, Yves Mols, Marina Baryshnikova
  • Nano-Ridge Engineering
    Publication number: 20210062360
    Abstract: A method for growing at least one III/V nano-ridge on a silicon substrate in an epitaxial growth chamber. The method comprises: patterning an area on a silicon substrate thereby forming a trench on the silicon substrate; growing the III/V nano-ridge by initiating growth of the III/V nano-ridge in the trench, thereby forming and filling layer of the nano-ridge inside the trench, and by continuing growth out of the trench on top of the filling layer, thereby forming a top part of the nano-ridge, wherein at least one surfactant is added in the chamber when the nano-ridge is growing out of the trench.
    Type: Application
    Filed: August 18, 2020
    Publication date: March 4, 2021
    Inventors: Bernardette Kunert, Robert Langer, Yves Mols, Marina Baryshnikova