Patents by Inventor Marina Medvedeva
Marina Medvedeva has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7406675Abstract: A method and system for improving aerial image simulation speeds. The method includes receiving a mask; generating a matrix of node values based on the mask, wherein each node value corresponds to a node of a plurality of nodes in a lattice; performing a one-dimensional (1-D) approximation of a plurality of first approximation values at corresponding first approximation points between pairs of nodes of the plurality of nodes; performing a two-dimensional (2-D) approximation of second approximation values at corresponding second approximation points between pairs of first approximation points, wherein Chebyshev polynomials are used to approximate the first approximation values and the second approximation values. According to the method and system disclosed herein, approximating values using Chebyshev polynomials results in high-resolution aerial images that are generated at faster speeds.Type: GrantFiled: December 16, 2005Date of Patent: July 29, 2008Assignee: LSI CorporationInventors: Sergey V. Uzhakov, Stanislav V. Aleshin, Marina Medvedeva
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Patent number: 7340706Abstract: The present invention provides a method and system for analyzing the quality of an OPC mask. The method includes receiving a target layer from a target design, receiving an OPC mask layer from the OPC mask. The method also includes classifying each cell of at least one of the target layer and the OPC mask layer as either repeating or non-repeating, and for each repeating cell, recognizing geometric points in the target layer to determine quality measuring groups. The method also includes simulating the OPC mask layer based on the quality measuring groups, measuring edge placement errors (EPEs) based on at least one of the geometric points, and providing an EPE layer representing EPEs greater than an EPE threshold.Type: GrantFiled: September 30, 2005Date of Patent: March 4, 2008Assignee: LSI Logic CorporationInventors: Ilya Golubtsov, Stanislav V. Aleshin, Ranko Scepanovic, Sergei Rodin, Marina Medvedeva, Sergey V. Uzhakov, Evgueny E. Egorov, Nadya Strelkova
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Patent number: 7260814Abstract: A method and system is provided for performing edge correction on a mask design. Aspects of the invention include initially fragmenting boundaries of the mask design for optical proximity correction, whereby edge segments of the boundaries are moved by a distance value; interpreting the moved edge segments by defining a new endpoint for respective pairs of neighboring edge segments that meet at an angle, the endpoint being a location of where lines on which the edge segments lie intersect, wherein the new endpoint is used to create a smoothed feature, resulting in a smoothed OPC mask; calculating distances between all pairs of comparable edge segments of the smoothed OPC mask; comparing the distances to a design rule limit; for each edge segment having a distance that exceeds the design rule limit, decreasing the segment's distance value; and optimizing the mask design by repeating the above steps until no distance violations are found.Type: GrantFiled: December 14, 2004Date of Patent: August 21, 2007Assignee: LSI CorporationInventors: Sergei Rodin, Stanislav V. Aleshin, Marina Medvedeva
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Publication number: 20070143734Abstract: A method and system for improving aerial image simulation speeds. The method includes receiving a mask; generating a matrix of node values based on the mask, wherein each node value corresponds to a node of a plurality of nodes in a lattice; performing a one-dimensional (1-D) approximation of a plurality of first approximation values at corresponding first approximation points between pairs of nodes of the plurality of nodes; performing a two-dimensional (2-D) approximation of second approximation values at corresponding second approximation points between pairs of first approximation points, wherein Chebyshev polynomials are used to approximate the first approximation values and the second approximation values. According to the method and system disclosed herein, approximating values using Chebyshev polynomials results in high-resolution aerial images that are generated at faster speeds.Type: ApplicationFiled: December 16, 2005Publication date: June 21, 2007Inventors: Sergey Uzhakov, Stanislav Aleshin, Marina Medvedeva
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Publication number: 20070079277Abstract: The present invention provides a method and system for analyzing the quality of an OPC mask. The method includes receiving a target layer from a target design, receiving an OPC mask layer from the OPC mask. The method also includes classifying each cell of at least one of the target layer and the OPC mask layer as either repeating or non-repeating, and for each repeating cell, recognizing geometric points in the target layer to determine quality measuring groups. The method also includes simulating the OPC mask layer based on the quality measuring groups, measuring edge placement errors (EPEs) based on at least one of the geometric points, and providing an EPE layer representing EPEs greater than an EPE threshold.Type: ApplicationFiled: September 30, 2005Publication date: April 5, 2007Inventors: Ilya Golubtsov, Stanislav Aleshin, Ranko Scepanovic, Sergei Rodin, Marina Medvedeva, Sergey Uzhakov, Evgueny Egorov, Nadya Strelkova
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Publication number: 20060129966Abstract: A method and system is provided for performing edge correction on a mask design. Aspects of the invention include initially fragmenting boundaries of the mask design for optical proximity correction, whereby edge segments of the boundaries are moved by a distance value; interpreting the moved edge segments by defining a new endpoint for respective pairs of neighboring edge segments that meet at an angle, the endpoint being a location of where lines on which the edge segments lie intersect, wherein the new endpoint is used to create a smoothed feature, resulting in a smoothed OPC mask; calculating distances between all pairs of comparable edge segments of the smoothed OPC mask; comparing the distances to a design rule limit; for each edge segment having a distance that exceeds the design rule limit, decreasing the segment's distance value; and optimizing the mask design by repeating the above steps until no distance violations are found.Type: ApplicationFiled: December 14, 2004Publication date: June 15, 2006Inventors: Sergei Rodin, Stanislav Aleshin, Marina Medvedeva
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Publication number: 20050268272Abstract: The present invention is directed to a method and apparatus for optimizing fragmentation of integrated circuit boundaries for optical proximity correction (OPC) purposes. The present invention may balance the number of vertices and the “flexibility” of the boundary and may recover fragmentation according to the process intensity profile along the ideal edge position to obtain the best decision for OPC.Type: ApplicationFiled: July 19, 2005Publication date: December 1, 2005Inventors: Stanislav Aleshin, Marina Medvedeva, Sergei Rodin, Eugeni Egorov
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Patent number: 6911285Abstract: A method and system for simply and efficiently correcting sidelobe formation is disclosed. The method for reducing sidelobe formation in an aerial image created from an attenuated phase shift mask used in photolithography includes the steps of: a) generating a density map for an input design having a set of nodes identified as being outside of a periphery of the input design; b) examining the aerial image using the density map to compare an image intensity of the aerial image at a plurality of locations, each location corresponding to one node of the set of nodes; c) marking a node of the density map when the image intensity at the corresponding location of the aerial image satisfies a threshold intensity criterion and a separation distance criterion to create a set of marked nodes; and d) masking each node of the set of marked nodes.Type: GrantFiled: December 20, 2002Date of Patent: June 28, 2005Assignee: LSI Logic CorporationInventors: Stanislav Aleshin, Marina Medvedeva, Sergei Rodin
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Publication number: 20050138597Abstract: The present invention is directed to a method and apparatus for optimizing fragmentation of integrated circuit boundaries for optical proximity correction (OPC) purposes. The present invention may balance the number of vertices and the “flexibility” of the boundary and may recover fragmentation according to the process intensity profile along the ideal edge position to obtain the best decision for OPC.Type: ApplicationFiled: December 18, 2003Publication date: June 23, 2005Inventors: Stanislav Aleshin, Marina Medvedeva, Sergei Rodin, Eugeni Egorov
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Publication number: 20050138596Abstract: The present invention is directed to a method and apparatus for making mask edge corrections using a gradient method for high density chip designs. The present invention uses a newly defined cost function.Type: ApplicationFiled: December 18, 2003Publication date: June 23, 2005Inventors: Marina Medvedeva, Stanislav Aleshin, Eugeni Egorov, Sergei Rodin
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Patent number: 6854104Abstract: An optical proximity correction system for local correction of an aerial image produced from a mask having transmissive portions and blocking portions collectively defining a target design includes an analyzer to match one or more segments of the target design to one or more typical case segments from a predetermined set of typical case segments; a controller, coupled to the analyzer, for approximating each of the one or more segments of the target design with matching typical case segments from the set of typical case segments to produce an adjusted aerial image.Type: GrantFiled: November 27, 2002Date of Patent: February 8, 2005Assignee: LSI Logic CorporationInventors: Stanislav Aleshin, Marina Medvedeva, Jaroslav Kalinin, Sergel Rodin
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Patent number: 6813758Abstract: The present invention is directed to an optical proximity correction driven hierarchy. A method for constructing a hierarchy of optically independent structures for use in optical proximity correction of a circuit may include receiving an integrated circuit design, the design including geometric circuit elements for providing circuit functions of an integrated circuit. At least a portion of the integrated circuit design is exploded and geometric circuit elements of the exploded integrated circuit design are gathered into optically independent classes. A search is then performed for congruency for each optically independent class.Type: GrantFiled: March 14, 2002Date of Patent: November 2, 2004Assignee: LSI Logic CorporationInventors: Stanislav V. Aleshin, Evgueny E. Egorov, Marina Medvedeva
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Publication number: 20040121242Abstract: A method and system for simply and efficiently correcting sidelobe formation is disclosed. The method for reducing sidelobe formation in an aerial image created from an attenuated phase shift mask used in photolithography includes the steps of: a) generating a density map for an input design having a set of nodes identified as being outside of a periphery of the input design; b) examining the aerial image using the density map to compare an image intensity of the aerial image at a plurality of locations, each location corresponding to one node of the set of nodes; c) marking a node of the density map when the image intensity at the corresponding location of the aerial image satisfies a threshold intensity criterion and a separation distance criterion to create a set of marked nodes; and d) masking each node of the set of marked nodes.Type: ApplicationFiled: December 20, 2002Publication date: June 24, 2004Inventors: Stanislav Aleshin, Marina Medvedeva, Sergei Rodin
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Publication number: 20040103388Abstract: An optical proximity correction system for local correction of an aerial image produced from a mask having transmissive portions and blocking portions collectively defining a target design includes an analyzer to match one or more segments of the target design to one or more typical case segments from a predetermined set of typical case segments; a controller, coupled to the analyzer, for approximating each of the one or more segments of the target design with matching typical case segments from the set of typical case segments to produce an adjusted aerial image.Type: ApplicationFiled: November 27, 2002Publication date: May 27, 2004Inventors: Stanislav Aleshin, Marina Medvedeva, Jaroslav Kalinin, Sergel Rodin
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Publication number: 20030177451Abstract: The present invention is directed to an optical proximity correction driven hierarchy. A method for constructing a hierarchy of optically independent structures for use in optical proximity correction of a circuit may include receiving an integrated circuit design, the design including geometric circuit elements for providing circuit functions of an integrated circuit. At least a portion of the integrated circuit design is exploded and geometric circuit elements of the exploded integrated circuit design are gathered into optically independent classes.Type: ApplicationFiled: March 14, 2002Publication date: September 18, 2003Inventors: Stanislav V. Aleshin, Evgueny E. Egorov, Marina Medvedeva