Abstract: In accordance with an example embodiment of the present invention, a system is disclosed. The system comprises a first sensing unit (11) adapted to detect change in a parameter and produce an electrical signal (12) based on the detection; and a memristive unit (13) electrically coupled to the first sensing unit (11), wherein the memristive unit (13) is adapted to switch between a first and a second states based on the electrical signal (12) produced by the first sensing unit (11), wherein the resistance value of the memristive unit (13) in the first state is lower than the resistance value of the memristive unit (13) in the second state. The system further comprises at least one additional sensing unit (14) electrically coupled to the memristive unit (13), wherein the at least one additional sensing unit (14) is adapted to stand by when the memristive unit (13) is in the second state, and perform measurement of a parameter when the memristive unit (13) is in the first state.

Abstract: A device is disclosed which comprises a first electrode (101), a second electrode (104) spaced from the first electrode, a switching region (102) positioned between the first electrode and the second electrode, and an intermediate region (103) positioned between the switching region and the second electrode, wherein the intermediate region is in electrical contact with the switching region and the second electrode. Preferably, the intermediate region comprises metal nanowires (105) in a polymer matrix, and the device is a memristor or a memcapacitor. In the latter case, the switching region comprises a conductive material (106) and an insulating material (107).

Abstract: A device is disclosed which comprises a first electrode (101), a second electrode (104) spaced from the first electrode, a switching region (102) positioned between the first electrode and the second electrode, and an intermediate region (103) positioned between the switching region and the second electrode, wherein the intermediate region is in electrical contact with the switching region and the second electrode. Preferably, the intermediate region comprises metal nanowires (105) in a polymer matrix, and the device is a memristor or a memcapacitor. In the latter case, the switching region comprises a conductive material (106) and an insulating material (107).

Abstract: In accordance with an example embodiment of the present invention, a device is disclosed. The device comprises: a sensing region comprising an active material and two or more electrodes in electrical contact with the active material; and a switching region providing control over the sensing region, the switching region comprising an active material and two or more electrodes in electrical contact with the active material. The switching region and the sensing region share one electrode, and the switching region and the sensing region share at least part of the active material. A method and apparatus for producing the device are also disclosed.

Abstract: In accordance with an example embodiment of the present invention, a system is disclosed. The system comprises a first sensing unit (11) adapted to detect change in a parameter and produce an electrical signal (12) based on the detection; and a memristive unit (13) electrically coupled to the first sensing unit (11), wherein the memristive unit (13) is adapted to switch between a first and a second states based on the electrical signal (12) produced by the first sensing unit (11), wherein the resistance value of the memristive unit (13) in the first state is lower than the resistance value of the memristive unit (13) in the second state. The system further comprises at least one additional sensing unit (14) electrically coupled to the memristive unit (13), wherein the at least one additional sensing unit (14) is adapted to stand by when the memristive unit (13) is in the second state, and perform measurement of a parameter when the memristive unit (13) is in the first state.

Abstract: In accordance with an example embodiment of the present invention, a system is disclosed. The system includes a sensing unit adapted to perform measurement of a parameter and produce an electrical signal based on the measurement; a memristive unit electrically coupled to the sensing unit and adapted to receive the produced electrical signal from the sensing unit, wherein the memristive unit is further adapted to produce a cumulative value of the received electrical signal over time; and a processing unit electrically coupled to the memristive unit and adapted to receive the produced cumulative value from the memristive unit, wherein the processing unit is further adapted to digitize the received cumulative value. A method and apparatuses are also disclosed.

Abstract: In accordance with an example embodiment of the present invention, a device is disclosed. The device comprises: a sensing region comprising an active material and two or more electrodes in electrical contact with the active material; and a switching region providing control over the sensing region, the switching region comprising an active material and two or more electrodes in electrical contact with the active material. The switching region and the sensing region share one electrode, and the switching region and the sensing region share at least part of the active material. A method and apparatus for producing the device are also disclosed.

Abstract: A device is disclosed which comprises a first electrode (101), a second electrode (104) spaced from the first electrode, a switching region (102) positioned between the first electrode and the second electrode, and an intermediate region (103) positioned between the switching region and the second electrode, wherein the intermediate region is in electrical contact with the switching region and the second electrode. Preferably, the intermediate region comprises metal nanowires (105) in a polymer matrix, and the device is a memristor or a memcapacitor. In the latter case, the switching region comprises a conductive material (106) and an insulating material (107).

Abstract: In accordance with an example embodiment of the present invention, a method is disclosed. The method comprises providing a two-dimensional object comprising a lll-V group material, e.g. Boron nitride (BN), Boron carbon nitride (BCN), Aluminium nitride (AIN), Gallium nitride (GaN), Indium Nitride (InN), Indium phosphide (InP), Indium arsenide (InAs), Boron phosphide (BP), Boron arsenide (BAs), and Gallium phosphide (GaP) and/or a Transition Metal Dichalcogenides (TMD) group material, e.g Molybdenum sulfide (MoS2), Molybdenum diselenide (MoSe2), Tungsten sulfide (WS2), Tungsten diselenide (WSe2), Niobium sulfide (NbS2), Vanadium sulfide (VS2,), and Tantalum sulfide (TaS2) into an environment comprising oxygen; and exposing at least one part of the two-dimensional object to photonic irradiation in said environment, thereby oxidizing at least part of the material of the exposed part of the two-dimensional object.