Patents by Inventor Marina S. Leite

Marina S. Leite has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250088132
    Abstract: A thin-film-coating/substrate two-layer thermal absorber/emitter structure is configured with controllable emission properties at ultra-high operating temperatures. The proposed two-layer thermal absorber/emitter structure is composed of a substrate made of a first material, and a thin-film layer/coating made of a second material and disposed on the substrate. The single thin-film layer or coating provides control and tuning of the emission properties of the overall two-layer thermal absorber/emitter structure. Both materials selected for the absorber/emitter structure possess high melt points to withstand extreme temperature variations. The two-layer thermal absorber/emitter structure reduces the complexity and cost of fabrication and manufacture and the likelihood of thermal failure.
    Type: Application
    Filed: July 29, 2022
    Publication date: March 13, 2025
    Applicant: The Regents of the University of California
    Inventors: Jeremy N. Munday, Marina S. Leite
  • Patent number: 9455146
    Abstract: A virtual substrate includes a handle support and a strain-relieved single crystalline layer on the handle support. A method of making the virtual substrate includes growing a coherently-strained single crystalline layer on an initial growth substrate, removing the initial growth substrate to relieve the strain on the single crystalline layer, and applying the strain-relieved single crystalline layer on a handle support.
    Type: Grant
    Filed: December 17, 2010
    Date of Patent: September 27, 2016
    Assignee: California Institute of Technology
    Inventors: Harry A. Atwater, Marina S. Leite, Emily C. Warmann, Dennis M. Callahan
  • Publication number: 20110193195
    Abstract: A virtual substrate includes a handle support and a strain-relieved single crystalline layer on the handle support. A method of making the virtual substrate includes growing a coherently-strained single crystalline layer on an initial growth substrate, removing the initial growth substrate to relieve the strain on the single crystalline layer, and applying the strain-relieved single crystalline layer on a handle support.
    Type: Application
    Filed: December 17, 2010
    Publication date: August 11, 2011
    Inventors: Harry A. Atwater, Marina S. Leite, Emily C. Warmann, Dennis M. Callahan