Abstract: A method utilizing a multilayer anti-reflective coating layer structure can achieve low reflectivity at high numerical apertures. The multilayer anti-reflective coating structure can be utilized as a hard mask forming various integrated circuit structures. A multilayer anti-reflective coating structure can be utilized to form gate stacks comprised of polysilicon and a dielectric layer. A photoresist is applied above the multilayer anti-reflective coating which can include silicon oxynitride (SiON) and silicon rich nitride (SiRN).

Abstract: A method utilizing a multilayer anti-reflective coating layer structure can achieve low reflectivity at high numerical apertures. The multilayer anti-reflective coating structure can be utilized as a hard mask forming various integrated circuit structures. A multilayer anti-reflective coating structure can be utilized to form gate stacks comprised of polysilicon and a dielectric layer. A photoresist is applied above the multilayer anti-reflective coating which can include silicon oxynitride (SiON) and silicon rich nitride (SiRN).

Abstract: A method utilizing a multilayer anti-reflective coating layer structure can achieve low reflectivity at high numerical apertures. The multilayer anti-reflective coating structure can be utilized as a hard mask forming various integrated circuit structures. A multilayer anti-reflective coating structure can be utilized to form gate stacks comprised of polysilicon and a dielectric layer. A photoresist is applied above the multilayer anti-reflective coating which can include silicon oxynitride (SiON) and silicon rich nitride (SiRN).

Abstract: The invention provides core stacks for flash memory with an anti-reflective interpoly dielectric. Instead of requiring an anti-reflective coating at the top of the a stack, the present invention uses the interpoly layer as an anti-reflective coating in conjunction with a transmissive second polymer layer. Light is transmitted through the transmissive second polymer layer to the anti-reflective interpoly dielectric layer. The transmissive second polymer layer is formed from an amorphous silicon or polysilicon. Silicon oxynitride (SiON), as formed in the present invention, having a good dielectric constant K, is tailored in its index of refraction and in its thickness for utilization as both a good interpoly material and an anti-reflective coating.

Abstract: Systems and methods are described that facilitate integrating ArF core patterning of floating gate structures in a flash memory device followed by KrF periphery gate patterning using a hard mask comprising a material such as amorphous carbon to facilitate core gate construction. The amorphous carbon hard mask can facilitate preparing such core gate structures while protecting periphery gate stacks such that the periphery stacks are ready for immediate KrF lithography upon completion of core gate formation without requiring additional resist deposition between core and periphery etches.

Abstract: A method utilizing a multilayer anti-reflective coating layer structure can achieve low reflectivity at high numerical apertures. The multilayer anti-reflective coating structure can be utilized as a hard mask forming various integrated circuit structures. A multilayer anti-reflective coating structure can be utilized to form gate stacks comprised of polysilicon and a dielectric layer. A photoresist is applied above the multilayer anti-reflective coating which can include silicon oxynitride (SiON) and silicon rich nitride (SiRN).

Abstract: A method utilizing a multilayer anti-reflective coating layer structure can achieve low reflectivity at high numerical apertures. The multilayer anti-reflective coating structure can be utilized as a hard mask forming various integrated circuit structures. A multilayer anti-reflective coating structure can be utilized to form gate stacks comprised of polysilicon and a dielectric layer. A photoresist is applied above the multilayer anti-reflective coating which can include silicon oxynitride (SiON) and silicon rich nitride (SiRN).

Abstract: Systems and methods are described that facilitate integrating ArF core patterning of floating gate structures in a flash memory device followed by KrF periphery gate patterning using a hard mask comprising a material such as amorphous carbon to facilitate core gate construction. The amorphous carbon hard mask can facilitate preparing such core gate structures while protecting periphery gate stacks such that the periphery stacks are ready for immediate KrF lithography upon completion of core gate formation without requiring additional resist deposition between core and periphery etches.

Abstract: The present invention discloses a system and method for designing grating structures for use in situ scatterometry during the photolithography process to detect a photoresist defect (e.g., photoresist erosion, pattern collapse or pattern bending). In one embodiment, a grating structure may be designed with a pitch or critical dimensional smaller than the one used for the semiconductor device. The pitch and the critical dimension of the grating structure may be varied. In another embodiment, the present invention provides for a feedback mechanism between the in situ scatterometry process and the photolithography process to provide an early warning of the existence of a photoresist defect. If a defect is detected on the wafer, the wafer may be sent to be re-worked or re-patterned, thereby avoiding scrapping the entire wafer.

Abstract: There is provided a method of making plurality of features in a first layer. A photoresist layer is formed over the first layer. Dense regions in the photoresist layer are exposed through a first mask under a first set of illumination conditions. Isolated regions in the photoresist layer are exposed through a second mask different from the first mask under a second set of illumination conditions different from the first set of illumination conditions. The exposed photoresist layer is patterned and then the first layer is patterned using the patterned photoresist layer as a mask.

Abstract: To reduce the width of a MOSFET gate, the gate is formed with a hardmask formed thereupon. An isotropic etch is then performed to trim the gate in order to reduce the width of the gate. The resulting gate may be formed with a width that is narrower than a minimum width achievable solely through conventional projection lithography techniques.

Abstract: For patterning an IC (integrated circuit) material, a rigid organic under-layer is formed over the IC material, and the rigid organic under-layer is patterned to form a rigid organic mask structure. In addition, the rigid organic mask structure is trimmed to lower a critical dimension of the rigid organic mask structure beyond the limitations of traditional BARC mask structures. Any portion of the IC material not under the rigid organic mask structure is etched away to form an IC structure.

Abstract: A method of implanting a middle of line (MOL) implant layer of a flash memory device that does not require a descumming step is disclosed. In a first embodiment, the method includes depositing a negative tone resist over the MOL implant layer. Portions of the negative tone resist in and above a plurality of trenches are not exposed to optical radiation, while portions surrounding the plurality of trenches are exposed. The unexposed portions are developed out thereby leaving a bottom surface of each trench substantially free of a resist residue. Implants can be placed in the MOL implant layer without the need for a descumming step. In a second embodiment, a bi-layer resist is deposited on the MOL implant layer, wherein the bi-layer resist includes a silicon containing top layer and a bottom layer. The bi-layer resist is patterned to expose a portion of the bottom layer that resides in and above a plurality of trenches.

Abstract: The present invention uses in situ scatterometry to determine if a defect (e.g., photoresist erosion, photoresist bending and pattern collapse) is present on a wafer. In one embodiment, in situ scatterometry is used to detect a pattern integrity defect associated with the layer of photoresist. In situ scatterometry produces diffraction data associated with the thickness of the photoresist patterned mask. This data is compared to a model of diffraction data associated with a suitable photoresist thickness. If the measured diffraction data is within an acceptable range, the next step of the photolithography process is carried out. However, if the measured thickness is outside of the suitable range, a defect is detected, and the wafer may be sent for re-working or re-patterned prior to main etch, thereby preventing unnecessary wafer scrap.

Abstract: A method of forming a contact in a flash memory device is disclosed. The method increases the depth of focus margin and the overlay margin between the contact and the stacked gate layers. A plurality of stacked gate layers are formed on a semiconductor substrate, wherein each stacked gate layer extends in a predefined direction and is substantially parallel to other stacked gate layers. An interlayer insulating layer is deposited over the plurality of stacked gate layers, and a contact hole is patterned between a first stacked gate layer of the plurality of stacked gate layers and a second stacked gate layer of the plurality of stacked gate layers. The contact hole is formed in an elongated shape, wherein a major axis of the contact hole is substantially parallel to the stacked gate layers. A conductive layer is deposited in the contact hole and excess conductive material is removed.

Abstract: A method and system for providing a semiconductor device. The semiconductor device includes a first layer to be etched. The method and system include depositing an anti-reflective coating. At least a portion of the anti-reflective coating layer is on the first layer. The method and system also include patterning a resist layer. The resist layer includes a pattern having a plurality of apertures therein. The resist layer is for etching the first layer. A first portion of the first layer and a second portion of the anti-reflective coating layer are exposed by the pattern. The method and system also include etching the first portion of the first layer and the second portion of the anti-reflective coating layer and removing the resist layer utilizing a plasma etch. The anti-reflective coating layer is resistant to the plasma etch.

Abstract: A damascene process can be utilized to form a T-shaped gate. A silicon rich nitride or SiON layer can be etched to form a first aperture. An oxide layer can be provided above the silicon rich nitride layer or SiON layer. A second aperture or trench can be provided in the oxide layer. The second trench can have a larger width than the trench in the silicon rich nitride layer or SiON layer. A gate conductor material, such as polysilicon, can be provided in the first trench and/or the second trench.

Abstract: In the formation of a semiconductor device, one or more hardmasks are formed during a process for patterning a device feature. One or more of the hardmasks is subjected to an isotropic etch to trim the hardmask prior to patterning an underlying layer. The trimmed hardmask layer is preferably an amorphous carbon layer.

Abstract: A method of forming a contact in a flash memory device is disclosed. The method increases the depth of focus margin and the overlay margin between the contact and the stacked gate layers. A plurality of stacked gate layers are formed on a semiconductor substrate, wherein each stacked gate layer extends in a predefined direction and is substantially parallel to other stacked gate layers. An interlayer insulating layer is deposited over the plurality of stacked gate layers, and a contact hole is patterned between a first stacked gate layer of the plurality of stacked gate layers and a second stacked gate layer of the plurality of stacked gate layers. The contact hole is formed in an elongated shape, wherein a major axis of the contact hole is substantially parallel to the stacked gate layers. A conductive layer is deposited in the contact hole and excess conductive material is removed.

Abstract: An amorphous carbon layer of an antireflective bi-layer hardmask is processed to increase its density prior to patterning of an underlying polysilicon layer using the bi-layer hardmask. The increased density of the layer increases its resistance to polysilicon etch chemistry, thus reducing the likelihood of patterning inaccuracies resulting from amorphous carbon depletion during polysilicon etch, and enabling the patterning of thicker polysilicon layers than can be reliably patterned without densification. The increased density also reduces stresses, thus reducing the likelihood of delamination. Densification may be performed by UV or e-beam irradiation after formation of an overlying protective layer. Densification may also be performed by annealing the amorphous carbon layer in situ prior to formation of the overlying protective layer. In the latter case, annealing reduces the amount of outgassing that occurs during formation of the protective layer, thus reducing the formation of pin holes.