Patents by Inventor Marinus Jochemsen

Marinus Jochemsen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200264522
    Abstract: Disclosed is a method of measuring focus performance of a lithographic apparatus, and corresponding patterning device and lithographic apparatus. The method comprises using the lithographic apparatus to print one or more first printed structures and second printed structures. The first printed structures are printed by illumination having a first non-telecentricity and the second printed structures being printed by illumination having a second non-telecentricity, different to said first non-telecentricity. A focus dependent parameter related to a focus-dependent positional shift between the first printed structures and the second printed structures on said substrate is measured and a measurement of focus performance based at least in part on the focus dependent parameter is derived therefrom.
    Type: Application
    Filed: August 3, 2018
    Publication date: August 20, 2020
    Applicant: ASML Netherlands B.V.
    Inventors: Laurentius Cornelius DE WINTER, Roland Pieter STOLK, Frank STAALS, Anton Bernhard VAN OOSTEN, Paul Christiaan HINNEN, Marinus JOCHEMSEN, Thomas THEEUWES, Eelco VAN SETTEN
  • Publication number: 20200249576
    Abstract: A method includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distribution for use in design, control or modification of the patterning process.
    Type: Application
    Filed: July 11, 2018
    Publication date: August 6, 2020
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Patrick WARNAAR, Patricius Aloysius Jacobus TINNEMANS, Grzegorz GRZELA, Everhardus Cornelis MOS, Wim Tjibbo TEL, Marinus JOCHEMSEN, Bart Peter Bert SEGERS, Frank STAALS
  • Patent number: 10725372
    Abstract: A method includes determining topographic information of a substrate for use in a lithographic imaging system, determining or estimating, based on the topographic information, imaging error information for a plurality of points in an image field of the lithographic imaging system, adapting a design for a patterning device based on the imaging error information. In an embodiment, a plurality of locations for metrology targets is optimized based on imaging error information for a plurality of points in an image field of a lithographic imaging system, wherein the optimizing involves minimizing a cost function that describes the imaging error information. In an embodiment, locations are weighted based on differences in imaging requirements across the image field.
    Type: Grant
    Filed: January 20, 2016
    Date of Patent: July 28, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Wim Tjibbo Tel, Marinus Jochemsen, Frank Staals, Christopher Prentice, Laurent Michel Marcel Depre, Johannes Marcus Maria Beltman, Roy Werkman, Jochem Sebastiaan Wildenberg, Everhardus Cornelis Mos
  • Publication number: 20200233311
    Abstract: A method, and associated apparatus and computer program, to determine corrections for a parameter of interest, such as critical dimension, of a patterning process. The method includes determining an exposure control correction for an exposure control parameter and, optionally, determining a process control correction for a process control parameter, based upon a measurement of the parameter of interest of a structure, and an exposure control relationship and a process control relationship. The exposure control relationship describes the dependence of the parameter of interest on the exposure control parameter and the process control relationship describes the dependence of the parameter of interest on the process control parameter. The exposure control correction and process control correction may be co-optimized to minimize variation of the parameter of interest of subsequent exposed and processed structures relative to a target parameter of interest.
    Type: Application
    Filed: February 16, 2017
    Publication date: July 23, 2020
    Inventors: Michael KUBIS, Marinus JOCHEMSEN, Richard Stephen WISE, Nader SHAMMA, Girish Anant DIXIT, Liesbeth REIJNEN, Ekaterina Mikhailovna VIATKINA, Melisa LUCA, Johannes Catharinus Hubertus MULKENS
  • Patent number: 10712672
    Abstract: A method including determining a first color pattern and a second color pattern associated with a hot spot of a design layout pattern, the design layout pattern configured for transfer to a substrate, and predicting, by a hardware computer system, whether there would be a defect at the hot spot on the substrate caused by overlay error, based at least in part on a measurement of an overlay error between the first color pattern and the second color pattern.
    Type: Grant
    Filed: July 7, 2017
    Date of Patent: July 14, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Marinus Jochemsen, Stefan Hunsche, Wim Tjibbo Tel
  • Publication number: 20200026200
    Abstract: A method for optimizing a sequence of processes for manufacturing of product units, includes: associating measurement results of performance parameters (e.g., fingerprints) with the recorded process characteristics (e.g., context); obtaining a characteristic (e.g., context) of a previous process (e.g. deposition) in the sequence already performed on a product unit; obtaining a characteristic (e.g., context) of a subsequent process (e.g., exposure) in the sequence to be performed on the product unit; determining a predicted performance parameter (e.g., fingerprint) of the product unit associated with the sequence of previous and subsequent processes by using the obtained characteristics to retrieve measurement results of the performance parameters (e.g., fingerprints) corresponding to the recorded characteristics; and determining corrections to be applied to future processes (e.g. exposure, etch) in the sequence to be performed on the product unit, based on the determined predicted performance parameter.
    Type: Application
    Filed: March 28, 2018
    Publication date: January 23, 2020
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Jochem Sebastiaan WILDENBERG, Marinus JOCHEMSEN, Erik JENSEN, Erik Johannes Maria WALLERBOS, Cornelis Johannes RIJNIERSE, Bijoy RAJASEKHARAN, Roy WERKMAN, Jurgen Johannes Henerikus Maria SCHOONUS
  • Patent number: 10459345
    Abstract: A method to improve a lithographic process of processing a portion of a design layout onto a substrate using a lithographic apparatus, the method including: adjusting a first processing parameter among processing parameters of the lithographic process to cause the processing to be more tolerant to perturbations of at least one of the processing parameters during processing; and adjusting a second processing parameter among processing parameters of the lithographic process to cause the processing to be more tolerant to perturbations of at least one of the processing parameters during processing.
    Type: Grant
    Filed: February 23, 2016
    Date of Patent: October 29, 2019
    Assignee: ASML Netherlands B.V.
    Inventors: Stefan Hunsche, Chiou-Hung Jang, Marinus Jochemsen, Vito Tomasello
  • Publication number: 20190310553
    Abstract: A method including determining a first color pattern and a second color pattern associated with a hot spot of a design layout pattern, the design layout pattern configured for transfer to a substrate, and predicting, by a hardware computer system, whether there would be a defect at the hot spot on the substrate caused by overlay error, based at least in part on a measurement of an overlay error between the first color pattern and the second color pattern.
    Type: Application
    Filed: July 7, 2017
    Publication date: October 10, 2019
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Marinus JOCHEMSEN, Stefan HUNSCHE, Wim Tjibbo TEL
  • Publication number: 20190285992
    Abstract: A method to change an etch parameter of a substrate etching process, the method including: making a first measurement of a first metric associated with a structure on a substrate before being etched; making a second measurement of a second metric associated with a structure on a substrate after being etched; and changing the etch parameter based on a difference between the first measurement and the second measurement.
    Type: Application
    Filed: November 6, 2017
    Publication date: September 19, 2019
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Richard Johannes Franciscus VAN HAREN, Victor Emanuel CALADO, Leon Paul VAN DIJK, Roy WERKMAN, Everhardus Cornelis MOS, Jochem Sebastiaan WILDENBERG, Marinus JOCHEMSEN, Bijoy RAJASEKHARAN, Erik JENSEN, Adam Jan URBANCZYK
  • Patent number: 10394136
    Abstract: A method involving measuring a first metrology target designed for a first range of values of a process parameter; measuring a second metrology target designed for a second range of values of the same process parameter, the second range different than the first range and the second metrology target having a different physical design than the first metrology target; and deriving process window data from a value of the process parameter in the first range determined from the measuring of the first metrology target, and from a value of the process parameter in the second range determined from the measuring of the second metrology target.
    Type: Grant
    Filed: September 14, 2016
    Date of Patent: August 27, 2019
    Assignee: ASML Netherlands B.V.
    Inventors: Wim Tjibbo Tel, Marinus Jochemsen
  • Publication number: 20190146358
    Abstract: A method including obtaining an image of a plurality of structures on a substrate, wherein each of the plurality of structures is formed onto the substrate by transferring a corresponding pattern of a design layout; obtaining, from the image, a displacement for each of the structures with respect to a reference point for that structure; and assigning each of the structures into one of a plurality of groups based on the displacement.
    Type: Application
    Filed: April 20, 2017
    Publication date: May 16, 2019
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Marinus JOCHEMSEN, Scott Anderson MIDDLEBROOKS, Stefan HUNSCHE, Te-Sheng WANG
  • Publication number: 20190147127
    Abstract: Methods of identifying a hot spot from a design layout or of predicting whether a pattern in a design layout is defective, using a machine learning model. An example method disclosed herein includes obtaining sets of one or more characteristics of performance of hot spots, respectively, under a plurality of process conditions, respectively, in a device manufacturing process; determining, for each of the process conditions, for each of the hot spots, based on the one or more characteristics under that process condition, whether that hot spot is defective; obtaining a characteristic of each of the process conditions; obtaining a characteristic of each of the hot spots; and training a machine learning model using a training set including the characteristic of one of the process conditions, the characteristic of one of the hot spots, and whether that hot spot is defective under that process condition.
    Type: Application
    Filed: April 20, 2017
    Publication date: May 16, 2019
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Jing SU, Yi ZOU, Chenxi LIN, Stefan HUNSCHE, Marinus JOCHEMSEN, Yen-Wen LU, Lin Lee CHEONG
  • Publication number: 20190086810
    Abstract: A method including: computing a value of a first variable of a pattern of, or for, a substrate processed by a patterning process by combining a fingerprint of the first variable on the substrate and a certain value of the first variable; and determining a value of a second variable of the pattern based at least in part on the computed value of the first variable.
    Type: Application
    Filed: February 17, 2017
    Publication date: March 21, 2019
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Wim Tjibbo TEL, Frank STAALS, Mark John MASLOW, Roy ANUNCIADO, Marinus JOCHEMSEN, Hugo Augustinus Joseph CRAMER, Thomas THEEUWES, Paul Christiaan HINNEN
  • Publication number: 20190025705
    Abstract: Provided is a process of selecting a measurement location, the process including: obtaining pattern data describing a pattern to be applied to substrates in a patterning process; obtaining a process characteristic measured during or following processing of a substrate, the process characteristic characterizing the processing of the substrate; determining a simulated result of the patterning process based on the pattern data and the process characteristic; and selecting a measurement location for the substrate based on the simulated result.
    Type: Application
    Filed: December 15, 2016
    Publication date: January 24, 2019
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Hans VAN DER LAAN, Wim Tjibbo TEL, Marinus JOCHEMSEN, Stefan HUNSCHE
  • Publication number: 20180284623
    Abstract: A method involving measuring a first metrology target designed for a first range of values of a process parameter; measuring a second metrology target designed for a second range of values of the same process parameter, the second range different than the first range and the second metrology target having a different physical design than the first metrology target; and deriving process window data from a value of the process parameter in the first range determined from the measuring of the first metrology target, and from a value of the process parameter in the second range determined from the measuring of the second metrology target.
    Type: Application
    Filed: September 14, 2016
    Publication date: October 4, 2018
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Wim Tjibbo TEL, Marinus JOCHEMSEN
  • Publication number: 20180173104
    Abstract: A method of defect validation for a device manufacturing process, the method including: obtaining a first image of a pattern processed into an area on a substrate using the device manufacturing process under a first condition; obtaining a metrology image from the area; aligning the metrology image and the first image; and determining from the first image and the metrology image whether the area contains a defect, based on one or more classification criteria.
    Type: Application
    Filed: May 25, 2016
    Publication date: June 21, 2018
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Stefan HUNSCHE, Rafael ALDANA LASO, Vivek Kumar JAIN, Marinus JOCHEMSEN, Xinjian ZHOU
  • Patent number: 9964865
    Abstract: A method of adjusting speed and/or routing of a part of a movement plan of a table under an immersion fluid supply system of a lithographic apparatus. The method includes splitting the movement plan of the table into a plurality of discrete movements; determining a risk of a bubble of a size greater than a certain size being present in immersion fluid through which a patterned beam of the lithographic apparatus will pass during a certain discrete movement by determining whether the immersion fluid supply system passes over a position at which immersion fluid leaked from the immersion fluid supply system is present; and adjusting the speed and/or routing of a part of the movement plan corresponding to (i) a discrete movement earlier than a discrete movement for which the risk of a bubble is determined, and/or (ii) a discrete movement for which the risk of a bubble is determined.
    Type: Grant
    Filed: April 29, 2016
    Date of Patent: May 8, 2018
    Assignee: ASML NETHERLANDS B.V.
    Inventors: Cédric Désiré Grouwstra, Nicolaas Rudolf Kemper, Norbertus Josephus Martinus Van Den Nieuwelaar, Dirk De Vries, Hua Li, Marinus Jochemsen
  • Publication number: 20180074413
    Abstract: A method to improve a lithographic process of processing a portion of a design layout onto a substrate using a lithographic apparatus, the method including: adjusting a first processing parameter among processing parameters of the lithographic process to cause the processing to be more tolerant to perturbations of at least one of the processing parameters during processing; and adjusting a second processing parameter among processing parameters of the lithographic process to cause the processing to be more tolerant to perturbations of at least one of the processing parameters during processing.
    Type: Application
    Filed: February 23, 2016
    Publication date: March 15, 2018
    Inventors: Stefan HUNSCHE, Chiou-Hung JANG, Marinus JOCHEMSEN, Vito TOMASELLO
  • Publication number: 20180011398
    Abstract: A method includes determining topographic information of a substrate for use in a lithographic imaging system, determining or estimating, based on the topographic information, imaging error information for a plurality of points in an image field of the lithographic imaging system, adapting a design for a patterning device based on the imaging error information. In an embodiment, a plurality of locations for metrology targets is optimized based on imaging error information for a plurality of points in an image field of a lithographic imaging system, wherein the optimizing involves minimizing a cost function that describes the imaging error information. In an embodiment, locations are weighted based on differences in imaging requirements across the image field.
    Type: Application
    Filed: January 20, 2016
    Publication date: January 11, 2018
    Applicant: ASML Netherlands B.V.
    Inventors: Wim Tjibbo TEL, Marinus JOCHEMSEN, Frank STAALS, Christopher PRENTICE, Laurent Michel Marcel DEPRE, Johannes Marcus Maria BELTMAN, Roy WERKMAN, Jochem Sebastiaan WILDENBERG, Everhardus Cornelis MOS
  • Publication number: 20160320714
    Abstract: A method of adjusting speed and/or routing of a part of a movement plan of a table under an immersion fluid supply system of a lithographic apparatus. The method includes splitting the movement plan of the table into a plurality of discrete movements; determining a risk of a bubble of a size greater than a certain size being present in immersion fluid through which a patterned beam of the lithographic apparatus will pass during a certain discrete movement by determining whether the immersion fluid supply system passes over a position at which immersion fluid leaked from the immersion fluid supply system is present; and adjusting the speed and/or routing of a part of the movement plan corresponding to (i) a discrete movement earlier than a discrete movement for which the risk of a bubble is determined, and/or (ii) a discrete movement for which the risk of a bubble is determined.
    Type: Application
    Filed: April 29, 2016
    Publication date: November 3, 2016
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Cédric Désiré GROUWSTRA, Nicolaas Rudolf KEMPER, Norbertus Josephus Martinus VAN DEN NIEUWELAAR, Dirk DE VRIES, Hua LI, Marinus JOCHEMSEN