Patents by Inventor Marinus Josephus de Blank

Marinus Josephus de Blank has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Cyclic aluminum nitride deposition in a batch reactor
    Patent number: 9552979
    Abstract: A process for depositing aluminum nitride is disclosed. The process comprises providing a plurality of semiconductor substrates in a batch process chamber and depositing an aluminum nitride layer on the substrates by performing a plurality of deposition cycles without exposing the substrates to plasma during the deposition cycles. Each deposition cycle comprises flowing an aluminum precursor pulse into the batch process chamber, removing the aluminum precursor from the batch process chamber, and removing the nitrogen precursor from the batch process chamber after flowing the nitrogen precursor and before flowing another pulse of the aluminum precursor. The process chamber may be a hot wall process chamber and the deposition may occur at a deposition pressure of less than 1 Torr.
    Type: Grant
    Filed: May 31, 2013
    Date of Patent: January 24, 2017
    Assignee: ASM IP HOLDING B.V.
    Inventors: Werner Knaepen, Bert Jongbloed, Dieter Pierreux, Peter Zagwijn, Hessel Sprey, Cornelius A. van der Jeugd, Marinus Josephus de Blank, Robin Roelofs, Qi Xie, Jan Willem Maes
  • CYCLIC ALUMINUM NITRIDE DEPOSITION IN A BATCH REACTOR
    Publication number: 20140357090
    Abstract: A process for depositing aluminum nitride is disclosed. The process comprises providing a plurality of semiconductor substrates in a batch process chamber and depositing an aluminum nitride layer on the substrates by performing a plurality of deposition cycles without exposing the substrates to plasma during the deposition cycles. Each deposition cycle comprises flowing an aluminum precursor pulse into the batch process chamber, removing the aluminum precursor from the batch process chamber, and removing the nitrogen precursor from the batch process chamber after flowing the nitrogen precursor and before flowing another pulse of the aluminum precursor. The process chamber may be a hot wall process chamber and the deposition may occur at a deposition pressure of less than 1 Torr.
    Type: Application
    Filed: May 31, 2013
    Publication date: December 4, 2014
    Inventors: Werner Knaepen, Bert Jongbloed, Dieter Pierreux, Peter Zagwijn, Hessel Sprey, Cornelius A. van der Jeugd, Marinus Josephus de Blank, Robin Roelofs, Qi Xie, Jan Willem Maes