Abstract: A single-side contacted solar cell and method for production of a single-side contacted solar cell provide a direct arrangement of a contact grid on one side of an absorber layer. A free surface of the contact grid is coated with an electrically non-conducting insulation layer. An emitter layer is deposited on a whole surface such that the contact grid is arranged between the absorber layer and the emitter layer. The emitter layer is provided with a contact layer. For back face contact, the emitter layer is arranged on a back face of the absorber layer to avoid additional absorptive losses.

Abstract: A heterocontact solar cell in a layer structure. The solar cell includes an absorber made of a p-type and/or n-type doped crystalline semiconductor material. The cell also includes an emitter made of an amorphous semiconductor material that is oppositely doped relative to the absorber. Also included is an intrinsic interlayer made of an amorphous semiconductor material between the absorber and the emitter. The cell includes a cover layer on the side of the absorber facing a light. A first ohmic contact structure including a minimized shading surface on the side of the absorber facing the light and a second ohmic contact structure on a side of the absorber facing away from the light are also included.

Abstract: Variations in parameters of a waveguide system caused by an excitation of charge carriers of a specimen to be measured and positioned in a microwave field, give definite information on the material properties of the specimen without having to destroy, or even contact the specimen. Irradiation with a sharply focused photon or electron beam of a surface spot having a diameter of about 0.1 to 10.0 micrometers, and displacing of this light spot across the surface of the specimen, with the displacement increments of the specimen within the cross sectional area of a waveguide being of the order of magnitude of micrometers, surface structures such as ground boundaries, steps in stratified-lattice crystals, formation defects, destroyed surface areas, etc., can be detected in photosensitive semiconductor layers with a high resolution.

Abstract: Materials and systems substantially having photoactive properties are produced with a high quality output and without time losses in the fabrication process. To determine the quality of the photoactive material in situ, conductivity is induced in the material by exciting charge carriers through irradiation, and an electromagnetic field influenced thereby is measured, with the result of the measurement being evaluated by a computer with a corresponding control of actuating members such as valves and controllers. Optimum process parameters are thus found and used for the process.