Patents by Inventor Marinus P. J. Hopstaken

Marinus P. J. Hopstaken has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Thin film transistors with epitaxial source/drain and drain field relief
    Patent number: 10910495
    Abstract: A method for manufacturing a semiconductor device includes forming a semiconductor layer on an insulating layer, epitaxially growing a first layer on the semiconductor layer, wherein the first layer has a first doping concentration, epitaxially growing a second layer on the semiconductor layer, wherein the second layer has a second doping concentration higher than the first doping concentration, forming a gate dielectric over an active region of the semiconductor layer, forming a gate electrode on the gate dielectric, and forming a plurality of source/drain contacts to the second layer, wherein the first and second layers comprise crystalline hydrogenated silicon (c-Si:H).
    Type: Grant
    Filed: September 3, 2019
    Date of Patent: February 2, 2021
    Assignee: International Business Machines Corporation
    Inventors: Bahman Hekmatshoartabari, Ghavam G. Shahidi, Marinus P.J. Hopstaken
  • Thin film transistors with epitaxial source/drain and drain field relief
    Patent number: 10608111
    Abstract: A method for manufacturing a semiconductor device includes forming a semiconductor layer on an insulating layer, epitaxially growing a first layer on the semiconductor layer, wherein the first layer has a first doping concentration, epitaxially growing a second layer on the semiconductor layer, wherein the second layer has a second doping concentration higher than the first doping concentration, forming a gate dielectric over an active region of the semiconductor layer, forming a gate electrode on the gate dielectric, and forming a plurality of source/drain contacts to the second layer, wherein the first and second layers comprise crystalline hydrogenated silicon (c-Si:H).
    Type: Grant
    Filed: December 12, 2018
    Date of Patent: March 31, 2020
    Assignee: International Business Machines Corporation
    Inventors: Bahman Hekmatshoartabari, Ghavam G. Shahidi, Marinus P. J. Hopstaken
  • THIN FILM TRANSISTORS WITH EPITAXIAL SOURCE/DRAIN AND DRAIN FIELD RELIEF
    Publication number: 20200006555
    Abstract: A method for manufacturing a semiconductor device includes forming a semiconductor layer on an insulating layer, epitaxially growing a first layer on the semiconductor layer, wherein the first layer has a first doping concentration, epitaxially growing a second layer on the semiconductor layer, wherein the second layer has a second doping concentration higher than the first doping concentration, forming a gate dielectric over an active region of the semiconductor layer, forming a gate electrode on the gate dielectric, and forming a plurality of source/drain contacts to the second layer, wherein the first and second layers comprise crystalline hydrogenated silicon (c-Si:H).
    Type: Application
    Filed: September 3, 2019
    Publication date: January 2, 2020
    Inventors: Bahman Hekmatshoartabari, Ghavam G. Shahidi, Marinus P.J. Hopstaken
  • THIN FILM TRANSISTORS WITH EPITAXIAL SOURCE/DRAIN AND DRAIN FIELD RELIEF
    Publication number: 20190172947
    Abstract: A method for manufacturing a semiconductor device includes forming a semiconductor layer on an insulating layer, epitaxially growing a first layer on the semiconductor layer, wherein the first layer has a first doping concentration, epitaxially growing a second layer on the semiconductor layer, wherein the second layer has a second doping concentration higher than the first doping concentration, forming a gate dielectric over an active region of the semiconductor layer, forming a gate electrode on the gate dielectric, and forming a plurality of source/drain contacts to the second layer, wherein the first and second layers comprise crystalline hydrogenated silicon (c-Si:H).
    Type: Application
    Filed: December 12, 2018
    Publication date: June 6, 2019
    Inventors: Bahman Hekmatshoartabari, Ghavam G. Shahidi, Marinus P.J. Hopstaken
  • Thin film transistors with epitaxial source/drain and drain field relief
    Patent number: 10224430
    Abstract: A method for manufacturing a semiconductor device includes forming a semiconductor layer on an insulating layer, epitaxially growing a first layer on the semiconductor layer, wherein the first layer has a first doping concentration, epitaxially growing a second layer on the semiconductor layer, wherein the second layer has a second doping concentration higher than the first doping concentration, forming a gate dielectric over an active region of the semiconductor layer, forming a gate electrode on the gate dielectric, and forming a plurality of source/drain contacts to the second layer, wherein the first and second layers comprise crystalline hydrogenated silicon (c-Si:H).
    Type: Grant
    Filed: December 6, 2017
    Date of Patent: March 5, 2019
    Assignee: International Business Machines Corporation
    Inventors: Bahman Hekmatshoartabari, Ghavam G. Shahidi, Marinus P. J. Hopstaken