Abstract: Gas injector inserts having a wedge-shaped housing, at least one first slot and at least one second slot are described. The housing has a first opening in the back face that is in fluid communication with the first slot in the front face and a second opening in the back face that is in fluid communication with the second slot in the front face. Each of the first slot and the second slot has an elongate axis that extends from the inner peripheral end to the outer peripheral end of the housing. The gas injector insert is configured to provide a flow of gas through the first slots at supersonic velocity. Gas distribution assemblies and processing chambers including the gas injector inserts are described.

Abstract: Apparatus and methods for depositing and treating or etching a film are described. A batch processing chamber includes a plurality of processing regions with at least one plasma processing region. A low frequency bias generator is connected to a susceptor assembly to intermittently apply a low frequency bias to perform a directional treatment or etching the deposited film.

Abstract: Heaters having a body with having a top and bottom comprising pyrolytic boron nitride (PBN), a first heater electrode and a second heater electrode are described. The heater electrodes can be enclosed within an electrically insulating standoff and connected to separate busbars to provide power. Heater assemblies including one or more of the heaters and processing chambers including the heater assemblies are also described.

Abstract: Exhaust systems for handling multiple effluent streams are described. Some embodiments include pressure drops to prevent perturbations from one effluent source from affecting a second effluent source. Some embodiments incorporate an exhaust assembly with multiple inlets and pumps and a single outlet. The exhaust assembly includes shared auxiliary components like purge and cooling systems.

Abstract: Processing chambers with a plurality of processing stations and individual wafer support surfaces are described. The processing stations and wafer support surfaces are arranged so that there is an equal number of processing stations and heaters. An RF generator is connected to a first electrode in a first station and a second electrode in a second station. A bottom RF path is formed by a connection between the a first support surface and a second support surface.

Abstract: Gas injector inserts having a wedge-shaped housing, at least one first slot and at least one second slot are described. The housing has a first opening in the back face that is in fluid communication with the first slot in the front face and a second opening in the back face that is in fluid communication with the second slot in the front face. Each of the first slot and the second slot has an elongate axis that extends from the inner peripheral end to the outer peripheral end of the housing. The gas injector insert is configured to provide a flow of gas through the first slots at supersonic velocity. Gas distribution assemblies and processing chambers including the gas injector inserts are described.

Abstract: Apparatus and methods for depositing and treating or etching a film are described. A batch processing chamber includes a plurality of processing regions with at least one plasma processing region. A low frequency bias generator is connected to a susceptor assembly to intermittently apply a low frequency bias to perform a directional treatment or etching the deposited film.

Abstract: Embodiments of the present invention relates to an apparatus and method for cleaning a substrate using a disk brush. One embodiment provides a substrate cleaner comprising a substrate chuck disposed in the processing volume, and a brush assembly disposed in the processing volume, wherein the brush assembly comprises a disk brush movably disposed opposing the substrate chuck, and a processing surface of the disk brush contacts a surface of the substrate on the substrate chuck.

Abstract: Embodiments of the present invention relates to an apparatus and method for cleaning a substrate using a disk brush. One embodiment provides a substrate cleaner comprising a substrate chuck disposed in the processing volume, and a brush assembly disposed in the processing volume, wherein the brush assembly comprises a disk brush movably disposed opposing the substrate chuck, and a processing surface of the disk brush contacts a surface of the substrate on the substrate chuck.

Abstract: Methods are provided for depositing a dielectric material. The dielectric material may be used for an anti-reflective coating or as a hardmask. In one aspect, a method is provided for processing a substrate including introducing a processing gas comprising a silane-based compound and an organosilicon compound to the processing chamber and reacting the processing gas to deposit a nitrogen-free dielectric material on the substrate. The dielectric material comprises silicon and oxygen.

Abstract: Methods are provided for depositing a dielectric material. The dielectric material may be used for an anti-reflective coating or as a hardmask. In one aspect, a method is provided for processing a substrate including introducing a processing gas comprising a silane-based compound and an oxygen and carbon containing compound to the processing chamber and reacting the processing gas to deposit a nitrogen-free dielectric material on the substrate. The dielectric material comprises silicon and oxygen. In another aspect, the dielectric material forms one or both layers in a dual layer anti-reflective coating.

Abstract: Methods are provided for depositing a dielectric material. The dielectric material may be used for an anti-reflective coating or as a hardmask. In one aspect, a method is provided for processing a substrate including introducing a processing gas comprising a silane-based compound and an oxygen and carbon containing compound to the processing chamber and reacting the processing gas to deposit a nitrogen-free dielectric material on the substrate. The dielectric material comprises silicon and oxygen. In another aspect, the dielectric material forms one or both layers in a dual layer anti-reflective coating.

Abstract: Methods are provided for depositing a dielectric material. The dielectric material may be used for an anti-reflective coating or as a hardmask. In one aspect, a method is provided for processing a substrate including introducing a processing gas comprising a silane-based compound and an organosilicon compound to the processing chamber and reacting the processing gas to deposit a nitrogen-free dielectric material on the substrate. The dielectric material comprises silicon and oxygen.