Abstract: A method and apparatus may include receiving data from a first device. The data may be received via a first protocol. The method can also include converting the data to be transmitted via a second protocol. The second protocol may be a high-speed proprietary or standard protocol. The method can also include transmitting the data via the second protocol to a second device.

Abstract: Certain embodiments may relate to providing increased storage capacity. For instance, a memory storage device may include a motherboard with an external communication interface. The memory storage device may also include a multiple solid-state drives coupled to the motherboard in communication with the external communication interface. Each of the plurality of solid-state drives may include a respective storage controller to manage the distribution of data during a write or read operation to a combination of a primary storage allocation and a redundant storage allocation. The redundant storage allocation may be included in the combination in response to detecting an error condition associated with at least a portion of the primary storage allocation.

Abstract: A method and apparatus may include receiving data from a first device. The data may be received via a first protocol. The method can also include converting the data to be transmitted via a second protocol. The second protocol may be a high-speed proprietary or standard protocol. The method can also include transmitting the data via the second protocol to a second device.

Abstract: Certain embodiments may relate to providing increased storage capacity. For instance, a memory storage device may include a motherboard with an external communication interface. The memory storage device may also include a multiple solid-state drives coupled to the motherboard in communication with the external communication interface. Each of the plurality of solid-state drives may include a respective storage controller to manage the distribution of data during a write or read operation to a combination of a primary storage allocation and a redundant storage allocation. The redundant storage allocation may be included in the combination in response to detecting an error condition associated with at least a portion of the primary storage allocation.

Abstract: A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.

Abstract: A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.

Abstract: Embodiments of a method comprising guiding an optical mode with an optical waveguide disposed in silicon, overlapping both the optical waveguide and an active semiconductor material evanescently coupled to the optical waveguide with the optical mode guided through the optical waveguide, electrically pumping the active semiconductor material to inject current directed through the active semiconductor material and through the optical mode, and generating light in the active semiconductor material in response to the injected current. Other embodiments are disclosed and claimed.

Abstract: A broadband receiving apparatus includes an antenna to receive a radio signal having a plurality of modulation frequencies. An amplifier drives a laser source from the broadband radio signal to produce an optical signal having a plurality of spectral components. A diffraction grating transforms the optical signal into its spectral components. An array of photo-detectors converts the spectral components into electronic signals corresponding to the plurality of modulation frequencies. A transmitting apparatus includes an array of coherent laser emitters driven by electronic signals corresponding to a plurality of modulation frequencies to produce optical signals corresponding to a plurality of spectral components. A diffraction grating inverse transforms the spectral components into a composite optical signal. A photo-detector converts the composite optical signal into a composite electronic signal including the plurality of modulation frequencies.

Abstract: Instead of monitoring the optical power coming out of a waveguide, a direct method of monitoring the optical power inside the waveguide without affecting device or system performance is provided. A waveguide comprises a p-i-n structure which induces a TPA-generated current and may be enhanced with reverse biasing the diode. The TPA current may be measured directly by probing metal contacts provided on the top surface of the waveguide, and may enable wafer-level testing. The p-i-n structures may be implemented at desired points throughout an integrated network, and thus allows probing of different devices for in-situ power monitor and failure analysis.

Abstract: Techniques and architectures for providing a reflective target area of an integrated circuit die assembly. In an embodiment, a reflective bevel surface of a die allows an optical signal to be received from the direction of a side surface of a die assembly for reflection into a photodetector. In another embodiment, one or more grooves in a coupling surface of the die provide respective leverage points for aligning a target area of the bevel surface with a detecting surface of the photodetector.

Abstract: Embodiments of a method comprising guiding an optical mode with an optical waveguide disposed in silicon, overlapping both the optical waveguide and an active semiconductor material evanescently coupled to the optical waveguide with the optical mode guided through the optical waveguide, electrically pumping the active semiconductor material to inject current directed through the active semiconductor material and through the optical mode, and generating light in the active semiconductor material in response to the injected current. Other embodiments are disclosed and claimed.

Abstract: A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.

Abstract: Sidewall photodetectors for integrated photonic devices and their method of manufacture. An embodiment includes a p-i-n film stack formed on a sidewall of a substrate semiconductor feature having sufficiently large area to accommodate the spot size of a multi-mode fiber. An embodiment includes a first sidewall photodetector coupled to a second sidewall photodetector by a waveguide, the first sidewall photodetector having an i-layer tuned to absorb a first wavelength of light incident to the first sidewall and pass a second wavelength of light to the second sidewall photodetector having an i-layer tuned to absorb the second wavelength.

Abstract: A broadband receiving apparatus includes an antenna to receive a radio signal having a plurality of modulation frequencies. An amplifier drives a laser source from the broadband radio signal to produce an optical signal having a plurality of spectral components. A diffraction grating transforms the optical signal into its spectral components. An array of photo-detectors converts the spectral components into electronic signals corresponding to the plurality of modulation frequencies. A transmitting apparatus includes an array of coherent laser emitters driven by electronic signals corresponding to a plurality of modulation frequencies to produce optical signals corresponding to a plurality of spectral components. A diffraction grating inverse transforms the spectral components into a composite optical signal. A photo-detector converts the composite optical signal into a composite electronic signal including the plurality of modulation frequencies.

Abstract: Instead of monitoring the optical power coming out of a waveguide, a direct method of monitoring the optical power inside the waveguide without affecting device or system performance is provided. A waveguide comprises a p-i-n structure which induces a TPA-generated current and may be enhanced with reverse biasing the diode. The TPA current may be measured directly by probing metal contacts provided on the top surface of the waveguide, and may enable wafer-level testing. The p-i-n structures may be implemented at desired points throughout an integrated network, and thus allows probing of different devices for in-situ power monitor and failure analysis.

Abstract: Techniques and architectures for providing a reflective target area of an integrated circuit die assembly. In an embodiment, a reflective bevel surface of a die allows an optical signal to be received from the direction of a side surface of a die assembly for reflection into a photodetector. In another embodiment, one or more grooves in a coupling surface of the die provide respective leverage points for aligning a target area of the bevel surface with a detecting surface of the photodetector.

Abstract: A broadband receiving apparatus includes an antenna to receive a radio signal having a plurality of modulation frequencies. An amplifier drives a laser source from the broadband radio signal to produce an optical signal having a plurality of spectral components. A diffraction grating transforms the optical signal into its spectral components. An array of photo-detectors converts the spectral components into electronic signals corresponding to the plurality of modulation frequencies. A transmitting apparatus includes an array of coherent laser emitters driven by electronic signals corresponding to a plurality of modulation frequencies to produce optical signals corresponding to a plurality of spectral components. A diffraction grating inverse transforms the spectral components into a composite optical signal. A photo-detector converts the composite optical signal into a composite electronic signal including the plurality of modulation frequencies.

Abstract: Sidewall photodetectors for integrated photonic devices and their method of manufacture. An embodiment includes a p-i-n film stack formed on a sidewall of a substrate semiconductor feature having sufficiently large area to accommodate the spot size of a multi-mode fiber. An embodiment includes a first sidewall photodetector coupled to a second sidewall photodetector by a waveguide, the first sidewall photodetector having an i-layer tuned to absorb a first wavelength of light incident to the first sidewall and pass a second wavelength of light to the second sidewall photodetector having an i-layer tuned to absorb the second wavelength.

Abstract: A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.

Abstract: An electrical-optical coupling and detecting device. An apparatus according to an embodiment of the present invention includes a reflective surface defined on semiconductor material. The reflective surface is to reflect an incident optical beam towards an optical destination. An optical detector is monolithically integrated in the reflective surface of the semiconductor material. The optical detector arranged in the reflective surface of the semiconductor material is to detect the incident optical beam.