Abstract: Provided is a method including at least the thermal treatment step of thermally treating a SOI substrate having a first silicon layer at a first temperature that the diffusion flow rate of an interstitial silicon atom in a silicon single crystal is higher than the diffusion flow rate of an interstitial oxygen atom and the processing step of processing the SOI substrate after the thermal treatment step to obtain a displacement enlarging mechanism.

Abstract: A MEMS element includes a substrate, a fixing portion provided at the substrate, first and second actuators provided at the fixing portion, a drive target member coupled to the first and second actuators, a third actuator provided at the fixing portion, and a restriction member coupled to the third actuator. The first and second actuators drive the drive target member in a direction parallel to or crossing an upper surface of the substrate. The third actuator drives the restriction member in a direction crossing a movement direction of the drive target member to position the restriction member within a movement plane of the drive target member such that the restriction member restricts displacement of the drive target member.

Abstract: A displacement enlarging mechanism includes a substrate, a fixing portion provided at the substrate, an actuator coupled to the fixing portion, a beam extending in a direction substantially parallel to an upper surface of the substrate and having a base end side has been coupled to the actuator and coupled to the fixing portion and having folded back in a direction crossing the upper surface of the substrate, and a coupling portion and a mirror coupled to a folded-back portion formed by folding back of the beam. The actuator drives the beam to push or pull the beam from the base end side in the direction of the folded-back portion.

Abstract: This accelerometer (100) includes a substrate (30) and a bonding member (90) that bonds the substrate (30) and a supporting member (50) to each other, and the bonding member (90) is arranged in a region (R3) that straddles a first region (R1) in which a first sensor element (11) is arranged and a second region (R2) in which a second sensor element (12) is arranged in a plan view.

Abstract: Provided is a method including at least the thermal treatment step of thermally treating a SOI substrate having a first silicon layer at a first temperature that the diffusion flow rate of an interstitial silicon atom in a silicon single crystal is higher than the diffusion flow rate of an interstitial oxygen atom and the processing step of processing the SOI substrate after the thermal treatment step to obtain a displacement enlarging mechanism.

Abstract: A displacement increasing mechanism has a fixing portion, first and second actuators coupled to the fixing portion, a first beam having first and second end portions and coupled to the first actuator at the first end portion, a second beam having third and fourth end portions and coupled to the second actuator at the third end portion, and a drive target member coupled to a parallel arrangement portion at which the first and second beams are arranged in parallel with each other. The first actuator is driven to pull the first beam from a second end portion side in the direction of extending the first beam, and the second actuator is driven to push the second beam form a fourth end portion side in the direction of extending the second beam.

Abstract: A displacement enlarging mechanism includes a substrate, a fixing portion provided at the substrate, an actuator coupled to the fixing portion, a beam extending in a direction substantially parallel to an upper surface of the substrate and having a base end side has been coupled to the actuator and coupled to the fixing portion and having folded back in a direction crossing the upper surface of the substrate, and a coupling portion and a mirror coupled to a folded-back portion formed by folding back of the beam. The actuator drives the beam to push or pull the beam from the base end side in the direction of the folded-back portion.

Abstract: A MEMS element includes a substrate 200, a fixing portion 2 provided at the substrate 200, first and second actuators 3, 4 provided at the fixing portion, a drive target member 7 coupled to the first and second actuators 3, 4, a third actuator 9 provided at the fixing portion 2, and a restriction member 10 coupled to the third actuator. The first and second actuators 3, 4 drive the drive target member 7 in a direction parallel to or crossing an upper surface of the substrate 200. The third actuator 9 drives the restriction member 10 in a direction crossing a movement direction of the drive target member 7 to position the restriction member 10 within a movement plane of the drive target member 7 such that the restriction member 10 restricts displacement of the drive target member 7.

Abstract: This accelerometer (100) includes a substrate (30) and a bonding member (90) that bonds the substrate (30) and a supporting member (50) to each other, and the bonding member (90) is arranged in a region (R3) that straddles a first region (R1) in which a first sensor element (11) is arranged and a second region (R2) in which a second sensor element (12) is arranged in a plan view.

Abstract: A displacement increasing mechanism has a fixing portion, first and second actuators coupled to the fixing portion, a first beam having first and second end portions and coupled to the first actuator at the first end portion, a second beam having third and fourth end portions and coupled to the second actuator 4 at the third end portion, and a drive target member coupled to a parallel arrangement portion at which the first and second beams are arranged in parallel with each other. The first actuator is driven to pull the first beam from a second end portion side in the direction of extending the first beam, and the second actuator is driven to push the second beam form a fourth end portion side in the direction of extending the second beam.