Abstract: A 1D ultrasonic converter unit having at least three ultrasonic converters and a control unit for individually controlling each ultrasonic converter, wherein each ultrasonic converter has a housing, a piezoelectric body, and a sound decoupling layer for decoupling sound waves in a gaseous medium, is embedded in a common carrier structure, and emits and/or receives the same frequency between 20 kHz and 400 kHz. Each ultrasonic converter has one sound channel having an input opening associated with one sound decoupling layer, and an output opening. The output openings are arranged along a line, a distance between two adjacent output openings corresponds at most to the whole or half the wavelength of the sound frequency and is smaller than the distance of the input openings.

Abstract: A 1D ultrasonic converter unit having at least three ultrasonic converters and a control unit for individually controlling each ultrasonic converter, wherein each ultrasonic converter has a housing, a piezoelectric body, and a sound decoupling layer for decoupling sound waves in a gaseous medium, is embedded in a common carrier structure, and emits and/or receives the same frequency between 20 kHz and 400 kHz. The 1D ultrasonic converter unit one sound channel having an input opening associated with one sound decoupling layer, and an output opening. The output openings are arranged along a line, a distance between two adjacent output openings corresponds at most to the whole or half the wavelength of the sound frequency and is smaller than the distance of the input openings.

Abstract: Capacitive micromachined ultrasonic transducers (CMUTs) having a pre-charged floating electrode are provided. Such CMUTs can operate without an applied DC electrical bias. Charge can be provided to the floating electrode after or during fabrication in various ways, such as injection by an applied voltage, and injection by ion implantation.

Abstract: Capacitive micromachined ultrasonic transducers (CMUTs) in permanent contact mode are provided. Such a CMUT always has its plate in contact with the substrate, even for zero applied electrical bias. This contact is provided by the pressure difference between the environment, and the pressure of the evacuated region between the CMUT plate and substrate. Due to this permanent contact, the electric field in the gap for a given DC bias voltage will be larger, which provides improved coupling efficiency at lower DC bias voltages. Furthermore, in an environment with high and varying pressure, the plate will not shift between the conventional mode and the collapsed mode, but will only be pushed down with varying contact radius. In some embodiments, an electrode shaped as an annulus is employed, so that only the active vibrating part of the CMUT plate sees the applied DC and AC voltages.

Abstract: Low temperature wafer bonding (temperature of 450° C. or less) is employed to fabricate CMUTs on a wafer that already includes active electrical devices. The resulting structures are CMUT arrays integrated with active electronics by a low-temperature wafer bonding process. The use of a low-temperature process preserves the electronics during CMUT fabrication. With this approach, it is not necessary to make compromises in the CMUT or electronics designs, as is typical of the sacrificial release fabrication approach. Various disadvantages of sacrificial release, such as low process control, poor design flexibility, low reproducibility, and reduced performance are avoided with the present approach. With this approach, a CMUT array can be provided with per-cell electrodes connected to the substrate integrated circuitry. This enables complete flexibility in electronically assigning the CMUT cells to CMUT array elements.

Abstract: The present invention provides a device that measures at least one property of the liquid or gas, where the invention is a CMUT sensor that includes a substrate, a first layer disposed on the substrate, where the first layer includes a cavity, and a compound plate, where the compound plated includes a bottom plate, an intermediate plate and a top plate. According to the invention, the intermediate plate has at least one sample inlet, a sample cavity and at least one sample outlet, where the bottom plate is disposed on the first layer, and the cavity in the first layer is sealed by the compound plate. The cavity in the first layer can be a vacuum or contain a gas. The CMUT sensor can be disposed in an array of two or more sensors and connected electrically in parallel.

Abstract: The present invention provides a device that measures at least one property of the liquid or gas, where the invention is a CMUT sensor that includes a substrate, a first layer disposed on the substrate, where the first layer includes a cavity, and a compound plate, where the compound plated includes a bottom plate, an intermediate plate and a top plate. According to the invention, the intermediate plate has at least one sample inlet, a sample cavity and at least one sample outlet, where the bottom plate is disposed on the first layer, and the cavity in the first layer is sealed by the compound plate. The cavity in the first layer can be a vacuum or contain a gas. The CMUT sensor can be disposed in an array of two or more sensors and connected electrically in parallel.

Abstract: A capacitive micromachined ultrasonic transducer (CMUT) array connected to a separate electronic unit is provided. The CMUT array includes at least two active elements, a ground element at the array end, and a non-active element having isolation trenches disposed between the active and ground elements. The active element includes a doped first silicon layer, a doped second silicon layer, and a first insulating layer disposed there between. A cavity is in the first silicon layer having a cross section that includes vertical portions disposed at each end of a horizontal portion, and the vertical portion spans from the first insulating layer through the first silicon layer such that a portion of the first silicon layer is isolated by the first insulating layer and the cavity. A membrane layer on the first silicon layer spans the cavity. A bottom electrode is disposed on the bottom of the second silicon layer.

Abstract: A high temperature micromachined ultrasonic transducer (HTCMUT) is provided. The HTCMUT includes a silicon on insulator (SOI) substrate having a doped first silicon layer, a doped second silicon layer, and a first insulating layer disposed between the first and second silicon layers. A cavity is disposed in the first silicon layer, where a cross section of the cavity includes a horizontal cavity portion on top of vertical cavity portions disposed at each end of the horizontal cavity portion, and the vertical cavity portion spans from the first insulating layer through the first silicon layer, such that a portion of the first silicon layer is isolated by the first insulating layer and the cavity. A membrane layer is disposed on the first silicon layer top surface, and spans across the cavity. A bottom electrode is disposed on the bottom of the second silicon layer.

Abstract: Low temperature wafer bonding (temperature of 450° C. or less) is employed to fabricate CMUTs on a wafer that already includes active electrical devices. The resulting structures are CMUT arrays integrated with active electronics by a low-temperature wafer bonding process. The use of a low-temperature process preserves the electronics during CMUT fabrication. With this approach, it is not necessary to make compromises in the CMUT or electronics designs, as is typical of the sacrificial release fabrication approach. Various disadvantages of sacrificial release, such as low process control, poor design flexibility, low reproducibility, and reduced performance are avoided with the present approach. With this approach, a CMUT array can be provided with per-cell electrodes connected to the substrate integrated circuitry. This enables complete flexibility in electronically assigning the CMUT cells to CMUT array elements.

Abstract: The present invention provides a method of fabricating low-frequency and high-intensity ultrasound CMUTs that includes using deep reactive ion (DRIE) etching to etch at least one cavity in a first surface of a conductive silicon wafer, growing an insulating layer on at least the first surface of the conductive silicon wafer, bonding a silicon layer of a SOI wafer to the insulating layer, where the SOI wafer includes a handle layer, a buried oxide layer and a conductive silicon layer. The handle layer and the buried oxide layer of the SOI wafer are removed, where the conductive layer of the SOI wafer forms a membrane across at least one cavity, and electrically isolating at least one the membrane across the at least one cavity, where at least one the low-frequency and high-intensity ultrasound CMUT is provided.

Abstract: The current invention provides methods of fabricating a capacitive micromachined ultrasonic transducer (CMUT) that includes oxidizing a substrate to form an oxide layer on a surface of the substrate having an oxidation-enabling material, depositing and patterning an oxidation-blocking layer to form a post region and a cavity region on the substrate surface and remove the oxidation-blocking layer and oxide layer at the post region. The invention further includes thermally oxidizing the substrate to grow one or more oxide posts from the post region, where the post defines the vertical critical dimension of the device, and bonding a membrane layer onto the post to form a membrane of the device. A maximum allowed second oxidation thickness t2 can be determined, that is partially based on a desired step height and a device size, and a first oxidation thickness t1 can be determined that is partially based on the determined thickness t2.

Abstract: Fabrication methods for capacitive micromachined ultrasonic transducers (CMUTS) with independent and precise gap and post thickness control are provided. The fabrication methods are based on local oxidation or local oxidation of silicon (LOCOS) to grow oxide posts. The process steps enable low surface roughness to be maintained to allow for direct wafer bonding of the membrane. In addition, methods for fabricating a step in a substrate are provided with reduced or minimal over-etch time by utilizing the nonlinearity of oxide growth. The fabrication methods of the present invention produce CMUTs with unmatched uniformity, low parasitic capacitance, and high breakdown voltage.

Abstract: A high temperature micromachined ultrasonic transducer (HTCMUT) is provided. The HTCMUT includes a silicon on insulator (SOI) substrate having a doped first silicon layer, a doped second silicon layer, and a first insulating layer disposed between the first and second silicon layers. A cavity is disposed in the first silicon layer, where a cross section of the cavity includes a horizontal cavity portion on top of vertical cavity portions disposed at each end of the horizontal cavity portion, and the vertical cavity portion spans from the first insulating layer through the first silicon layer, such that a portion of the first silicon layer is isolated by the first insulating layer and the cavity. A membrane layer is disposed on the first silicon layer top surface, and spans across the cavity. A bottom electrode is disposed on the bottom of the second silicon layer.

Abstract: A capacitive micromachined ultrasonic transducer (CMUT) array connected to a separate electronic unit is provided. The CMUT array includes at least two active elements, a ground element at the array end, and a non-active element having isolation trenches disposed between the active and ground elements. The active element includes a doped first silicon layer, a doped second silicon layer, and a first insulating layer disposed there between. A cavity is in the first silicon layer having a cross section that includes vertical portions disposed at each end of a horizontal portion, and the vertical portion spans from the first insulating layer through the first silicon layer such that a portion of the first silicon layer is isolated by the first insulating layer and the cavity. A membrane layer on the first silicon layer spans the cavity. A bottom electrode is disposed on the bottom of the second silicon layer.

Abstract: An ultrasonic gas flowmeter includes a measuring pipe with flowing gas, transmitting and receiving sound transducers, transmission and reception electronics, and evaluation electronics. The sound transducers (7, 8, 9, 10) are designed as capacitive electro-acoustic ultrasonic transducers to construct a flowmeter with improved capacity, especially in view of temperature stability and the reduction and consideration of a temperature profile. Devices (5, 6) are provided to level the gas temperature profile and to minimize the influence of the temperature profile on the flow measurement. A more accurate and dependable detection of the volume flow or the mass flow of gases is to be achieved, especially in highly dynamic flows, for the method of determining the flow of gases whereby the mean flow velocity is determined and the flowing gas quantity is determined with highly synchronized resolution from the two transit times of two acoustic signals.

Abstract: Two capacitors are provided for demodulating an amplitude-modulated signal and can be supplied with a signal that is rectified by a diode and that is at a voltage. The half-cycles of this signal are used for alternately charging the first or second capacitor using a switch. The capacitors are discharged using switches. Comparing the amplitude values, which are stored in the capacitors, of successive half-cycles in an evaluation unit allows simple and precise demodulation, which can be achieved with few components and can be carried out at very high frequencies.

Abstract: An ultrasonic gas flowmeter includes a measuring pipe with flowing gas, transmitting and receiving sound transducers, transmission and reception electronics, and evaluation electronics. The sound transducers (7, 8, 9, 10) are designed as capacitive electro-acoustic ultrasonic transducers to construct a flowmeter with improved capacity, especially in view of temperature stability and the reduction and consideration of a temperature profile. Devices (5, 6) are provided to level the gas temperature profile and to minimize the influence of the temperature profile on the flow measurement. A more accurate and dependable detection of the volume flow or the mass flow of gases is to be achieved, especially in highly dynamic flows, for the method of determining the flow of gases whereby the mean flow velocity is determined and the flowing gas quantity is determined with highly synchronized resolution from the two transit times of two acoustic signals.

Abstract: The invention provides a circuit configuration for demodulating a voltage that is ASK modulated by altering the amplitude between a low level and a high level. In this case, a first and a second charging circuit each produce a charging voltage and decoupling device decouples the first charging circuit when there is a prescribed ratio between the charging voltage of the second charging circuit and an input voltage for the rectifier circuit.

Abstract: The invention provides a circuit configuration for demodulating a voltage that is ASK modulated by altering the amplitude between a low level and a high level. In this case, a first and a second charging circuit each produce a charging voltage and a decoupling device decouples the first charging circuit when there is a prescribed ratio between the charging voltage of the second charging circuit and an input voltage for the rectifier circuit.