Abstract: A THz frequency range antenna is provided which comprises: a semiconductor film (3) having a surface adapted to exhibit surface plasmons in the THz frequency range. The surface of the semiconductor film (3) is structured with an antenna structure (4) arranged to support localized surface plasmon resonances in the THz frequency range.

Abstract: A THz frequency range antenna is provided which comprises: a semiconductor film (3) having a surface adapted to exhibit surface plasmons in the THz frequency range. The surface of the semiconductor film (3) is structured with an antenna structure (4) arranged to support localized surface plasmon resonances in the THz frequency range.

Abstract: A capacitor device, an electronic circuit comprising a capacitor device, an electronic component, and a method of forming a capacitor device are described. In the capacitor device, a current-path region extends from one of two trench capacitor electrodes to a respective contact structure. The current-path region is obtainable by thinning the substrate from an original substrate thickness down to reduced substrate thickness either in a lateral substrate portion containing the capacitor region or over the complete lateral extension of the substrate before forming the first and second contact structures. The capacitor device exhibits a reduced impedance in the current-path region. This reduced impedance implies a low self-inductance and self-resistance that is caused by the current-path region.

Abstract: The present invention relates to a capacitor device (500), an electronic circuit comprising a capacitor device, to an electronic component, and to a method of forming a capacitor device. In the capacitor device of the invention, a current-path region (530) extends from one of two trench capacitor electrodes to a respective contact structure (520). The current-path region of the capacitor device of the invention is obtainable by thinning the substrate from an original substrate thickness down to reduced substrate thickness either in a lateral substrate portion containing the capacitor region or over the complete lateral extension of the substrate before forming the first and second contact structures. The capacitor device of the invention has the advantage of exhibiting a reduced impedance in the current-path region. This reduced impedance implies a low self-inductance and self-resistance that is caused by the current-path region of the capacitor device.

Abstract: A metallization structure in a multilayer stack, which is arranged at a distance from a ground electrode, is characterized in that the metallization structure has a capacitor electrode and a line that acts as a coil, where the capacitor electrode and the line are arranged in a common plane which lies parallel with the ground electrode at a distance h1, and in that formula (I) where w is the width of the line.

Abstract: A decoupling module for decoupling high-frequency signals from a voltage supply line that has an inductance, the module comprising a plurality of parallel-connected capacitors (K1, K2, . . . ) which have each a capacitance (C1, C2, . . . ) is characterized in that to at least one of the capacitors (K1) is assigned an inductance (L1) which is selected in dependence on the capacitance (C1) of the capacitor (K1) so that a resonance is generated which compensates the self-resonance of the system from at least a further capacitor (K2, . . . ) and the voltage supply line (S).

Abstract: A device for dynamic impedance matching between a power amplifier and an antenna, having a circulator (210), which routes a signal received from the power amplifier (10) at a first port via a second port to the antenna (30) and diverts the signal reflected at the antenna (30) and received at the second port through a third port; and a controllable matching network (24, 240, 250); is characterized in that a directional coupler (200) diverts a proportion of the signal traveling from the power amplifier (10) to the antenna (30), from which the magnitude and phase of the signal may be derived, to a signal detector (220); and the circulator (210) routes the entire signal reflected at the antenna (30) into the signal detector (220); wherein the signal detector (220) passes the magnitude and phase of both the signal traveling to the antenna (30) and the signal reflected at the antenna (30) to a controller (230), which evaluates the information received from the signal detector (220) in order to determine the present

Abstract: A decoupling module for decoupling high-frequency signals from a power supply line, the module comprising a layer (30) of dielectric material which is arranged between a first and a second metallic layer (20, 22), where the first metallic layer (20) is connected as a ground electrode of the de-coupling module, the module being characterized in that the second metallic layer (22) comprises at least two surfaces (220, 222) of different size which are consecutively electrically connected between an input connection point and an output connection point, while two respective consecutive surfaces are connected to each other by only one conducting section (224).

Abstract: A coupler (10) having a first line (1) and a second line (2) also comprises a resonant structure (3) including a capacitor (5) and an inductor (4). The coupler (10) thus delivers a coupling signal S31 that is substantially frequency independent over a frequency domain above the resonance frequency of the resonant structure (3). Also, the signal S31 has a high degree of directivity. The coupler (10) can be provided as part of an integrated electronic component, such as a multilayer substrate, a thin-film module or an IC. It can be applied in an electronic device (100) between a power amplifier (101) and an antenna (103). The coupling signal S31 will thus be provided to a controlling circuit (102).