Patents by Inventor Marion Migette

Marion Migette has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8951809
    Abstract: A method of carrying out a transfer of one or more first components or of a first layer onto a second substrate including: a) application and maintaining, by electrostatic effect, of the one or more first components or of the first layer, on a first substrate, made of a ferroelectric material, electrically charged, b) placing in contact, direct or by molecular adhesion, and transfer of the components or the layer onto a second substrate, and c) dismantling of the first substrate, leaving at least one part of the components or the layer on the second substrate.
    Type: Grant
    Filed: April 3, 2009
    Date of Patent: February 10, 2015
    Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
    Inventors: Jean-Sebastien Moulet, Lea Di Cioccio, Marion Migette
  • Patent number: 8679944
    Abstract: The invention provides a method of trimming a structure that includes a first wafer bonded to a second wafer, with the first wafer having a chamfered edge. The method includes a first trimming step carried out over a first depth that includes at least the thickness of the first wafer and over a first width determined from the edge of the first wafer. A second trimming step is then carried out over a second depth that includes at least the thickness of the first wafer and over a second width that is less than the first width.
    Type: Grant
    Filed: July 31, 2009
    Date of Patent: March 25, 2014
    Assignee: Soitec
    Inventors: Marcel Broekaart, Marion Migette, Sébastien Molinari, Eric Neyret
  • Publication number: 20110117691
    Abstract: The invention relates to a method of trimming a structure that includes a first wafer bonded to a second wafer, with the first wafer having a chamfered edge. The method includes a first step of trimming the edge of the first wafer by mechanical machining over a predetermined depth in the first wafer. This first trimming step is followed by a second step of non-mechanical trimming over at least the remaining thickness of the first wafer.
    Type: Application
    Filed: July 31, 2009
    Publication date: May 19, 2011
    Inventors: Marcel Broekaart, Marion Migette, Sébastien Molinari, Eric Neyret
  • Publication number: 20110104829
    Abstract: A method of carrying out a transfer of one or more first components or of a first layer onto a second substrate including: a) application and maintaining, by electrostatic effect, of the one or more first components or of the first layer, on a first substrate, made of a ferroelectric material, electrically charged, b) placing in contact, direct or by molecular adhesion, and transfer of the components or the layer onto a second substrate, and c) dismantling of the first substrate, leaving at least one part of the components or the layer on the second substrate.
    Type: Application
    Filed: April 3, 2009
    Publication date: May 5, 2011
    Applicant: Commiss. A L'Energie Atom. ET Aux Energ. Alterna.
    Inventors: Jean-Sebastien Moulet, Lea Di Cioccio, Marion Migette
  • Publication number: 20110097874
    Abstract: The invention provides a method of trimming a structure that includes a first wafer bonded to a second wafer, with the first wafer having a chamfered edge. The method includes a first trimming step carried out over a first depth that includes at least the thickness of the first wafer and over a first width determined from the edge of the first wafer. A second trimming step is then carried out over a second depth that includes at least the thickness of the first wafer and over a second width that is less than the first width.
    Type: Application
    Filed: July 31, 2009
    Publication date: April 28, 2011
    Inventors: Marcel Broekaart, Marion Migette, Sebastian Molinari, Eric Neyret