Patents by Inventor Marion Thurnauer

Marion Thurnauer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20050032092
    Abstract: A method is provided for selective binding and detecting target molecules, and a method for detecting biological molecules, the method comprising supplying a semi-conductor capable of charge pair separation, and juxtaposing affinity moieties to the semi-conductor so as to effect changes in the charge pair separation characteristics when the affinity molecules are bound to the target molecules. Also provided is a construct to facilitate in vivo and in situ manipulation of biological material such as DNA, RNA, organelles, and protein. A method also is provided to facilitate in vivo and in situ manipulation of biological material.
    Type: Application
    Filed: April 12, 2004
    Publication date: February 10, 2005
    Inventors: Tijana Rajh, Tatjana Paunesku, Gayle Woloschak, Marion Thurnauer
  • Patent number: 6410935
    Abstract: An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.
    Type: Grant
    Filed: May 16, 2001
    Date of Patent: June 25, 2002
    Assignee: Argonne National Laboratory
    Inventors: Tijana Rajh, Natalia Meshkov, Jovan M. Nedelijkovic, Laura R. Skubal, David M. Tiede, Marion Thurnauer
  • Publication number: 20020047180
    Abstract: An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.
    Type: Application
    Filed: May 16, 2001
    Publication date: April 25, 2002
    Applicant: Argonne National Laboratory
    Inventors: Tijana Rajh, Natalia Meshkov, Jovan M. Nedelijkovic, Laura R. Skubal, David M. Tiede, Marion Thurnauer
  • Patent number: 6271130
    Abstract: An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.
    Type: Grant
    Filed: November 25, 1998
    Date of Patent: August 7, 2001
    Assignee: The University of Chicago
    Inventors: Tijana Rajh, Natalia Meshkov, Jovan M. Nedelijkovic, Laura R. Skubal, David M. Tiede, Marion Thurnauer
  • Patent number: 5225788
    Abstract: An apparatus for selecting a single synchrotron pulse from the millions of pulses provided per second from a synchrotron source includes a rotating spindle located in the path of the synchrotron pulses. The spindle has multiple faces of a highly reflective surface, and having a frequency of rotation f. A shutter is spaced from the spindle by a radius r, and has an open position and a closed position. The pulses from the synchrotron are reflected off the spindle to the shutter such that the speed s of the pulses at the shutter is governed by:s=4.times..pi..times.r.times.f.such that a single pulse is selected for transmission through an open position of the shutter.
    Type: Grant
    Filed: September 20, 1991
    Date of Patent: July 6, 1993
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: James R. Norris, Jau-Huei Tang, Lin Chen, Marion Thurnauer