Abstract: A method for transferring electroluminescent structures onto a face, referred to as the accommodating face, of an accommodating substrate. The accommodating face is moreover provided with interconnections intended to individually address each of the structures. The electroluminescent structures are initially formed on a supporting substrate and are separated by tracks. It is then proposed in the present invention to form reflective walls, vertically above the tracks, which comprise a supporting polymer (the second polymer) supporting a metal film on its sides. Such an arrangement of reflective walls makes it possible to reduce the stresses exerted on the electroluminescent structures during the transfer method according to the present invention. Moreover, the reflective walls, within the meaning of the present invention, may be produced on all the electroluminescent structures resting on a supporting substrate.

Abstract: An optoelectronic device including a substrate having opposite first and second surfaces; insulation trenches extending through the substrate, surrounding portions of the substrate and electrically insulating the portions from each other, each insulation trench being filled with at least one electrically insulating block and a gaseous volume or being filled with an electrically conductive element electrically isolated from the substrate; at least one light-emitting diode resting on the first surface for each portion of the substrate, the light-emitting diodes comprising wired, conical, or frustoconical semiconductor elements; an electrode layer covering at least one of the light-emitting diodes and a conductive layer overlying the electrode layer around the light-emitting diodes; and a layer encapsulating the light-emitting diodes and covering the entire first surface.

Abstract: A method for forming a common electrode is provided, including: a) providing a support substrate on which rest optoelectronic devices separated by trenches; b) forming a dielectric layer on front faces, flanks, and a bottom of the trenches, of a thickness E1 and a thickness E2, which is less than the thickness E1, at, respectively, the front faces and the flanks; c) etching a thickness E3 of the dielectric layer, so as to uncover the flanks at a first section of the trenches; d) forming a metal layer filling the trenches and covering the front faces; and e) performing a mechanochemical polishing of the metal layer, the polishing stopping on a portion of the dielectric layer, the metal layer remaining in the trenches forming the common electrode.

Abstract: A method for producing optoelectronic devices, including the following successive steps: providing a substrate having a first face; on the first face, forming sets of light-emitting diodes including wire-like, conical or frustoconical semiconductor elements; covering all of the first face with a layer encapsulating the light-emitting diodes; forming a conductive element that is insulated from the substrate and extends through the substrate from the second face to at least the first face; reducing the thickness of the substrate; and cutting the resulting structure in order to separate each set of light-emitting diodes.

Abstract: An optoelectronic device including a substrate having opposite first and second surfaces; insulation trenches extending through the substrate, surrounding portions of the substrate and electrically insulating the portions from each other, each insulation trench being filled with at least one electrically insulating block and a gaseous volume or being filled with an electrically conductive element electrically isolated from the substrate; at least one light-emitting diode resting on the first surface for each portion of the substrate, the light-emitting diodes comprising wired, conical, or frustoconical semiconductor elements; an electrode layer covering at least one of the light-emitting diodes and a conductive layer overlying the electrode layer around the light-emitting diodes; and a layer encapsulating the light-emitting diodes and covering the entire first surface.

Abstract: A method for producing a photo-emitting and/or photo-receiving device with a metal optical separation grid, comprising at least: producing at least one photo-emitting and/or photo-receiving component, wherein at least one first metal electrode of the photo-emitting and/or photo-receiving component covers side flanks of at least one semiconductor stack of the photo-emitting and/or photo-receiving component and extends to at least one emitting and/or receiving face of the photo-emitting and/or photo-receiving component; treating at least one face of the first metal electrode located at the emitting and/or receiving face, rendering wettable said face of the first metal electrode; producing of the metal optical separation grid on at least one support; fastening of the metal optical separation grid against said face of the first metal electrode by brazing; removing the support.

Abstract: An electronic circuit including a semiconductor substrate having first and second opposite surfaces and electrically-insulating trenches. Each trench includes at least first and second insulating portions made of a first insulating material, extending from the first surface to the second surface, first and second intermediate portions, extending from the first surface to the second surface, made of a first filling material, and a third insulating portion extending from the first surface to the second surface, the first insulating portion being in contact with the first intermediate portion, the second insulating portion being in contact with the second intermediate portion, and the third insulating portion being interposed between the intermediate portions.

Abstract: A method for forming a common electrode is provided, including: a) providing a support substrate on which rest optoelectronic devices separated by trenches; b) forming a dielectric layer on front faces, flanks, and a bottom of the trenches, of a thickness E1 and a thickness E2, which is less than the thickness E1, at, respectively, the front faces and the flanks; c) etching a thickness E3 of the dielectric layer, so as to uncover the flanks at a first section of the trenches; d) forming a metal layer filling the trenches and covering the front faces; and e) performing a mechanochemical polishing of the metal layer, the polishing stopping on a portion of the dielectric layer, the metal layer remaining in the trenches forming the common electrode.

Abstract: An electronic circuit including a semiconductor substrate having first and second opposite surfaces and electric insulation trenches. Each trench separates first and second portions of the substrate and includes electrically-insulating walls made of a first electrically-insulating material, extending from the first surface to the second surface, and a core made of a filling material, separated from the substrate by the walls. For at least one of the trenches, the trench walls include electrically-insulating portions made of the first electrically-insulating material protruding from the first or second surface outside of the substrate and/or the trench includes an electrically-insulating wall made of the first electrical-insulating material protruding from the first or second surface outside of the substrate and coupling the trench walls.

Abstract: A method for transferring electroluminescent structures onto a face, referred to as the accommodating face, of an accommodating substrate. The accommodating face is moreover provided with interconnections intended to individually address each of the structures. The electroluminescent structures are initially formed on a supporting substrate and are separated by tracks. It is then proposed in the present invention to form reflective walls, vertically above the tracks, which comprise a supporting polymer (the second polymer) supporting a metal film on its sides. Such an arrangement of reflective walls makes it possible to reduce the stresses exerted on the electroluminescent structures during the transfer method according to the present invention. Moreover, the reflective walls, within the meaning of the present invention, may be produced on all the electroluminescent structures resting on a supporting substrate.

Abstract: A method for producing a photo-emitting and/or photo-receiving device with a metal optical separation grid, comprising at least: producing at least one photo-emitting and/or photo-receiving component, wherein at least one first metal electrode of the photo-emitting and/or photo-receiving component covers side flanks of at least one semiconductor stack of the photo-emitting and/or photo-receiving component and extends to at least one emitting and/or receiving face of the photo-emitting and/or photo-receiving component; treating at least one face of the first metal electrode located at the emitting and/or receiving face, rendering wettable said face of the first metal electrode; producing of the metal optical separation grid on at least one support; fastening of the metal optical separation grid against said face of the first metal electrode by brazing; removing the support.

Abstract: The invention relates to a light-emitting device (100) comprising: at least one light-emitting structure (110) comprising a first side and a second side that are essentially parallel; a first electrode (160, 170) making contact, via a contact area, with either one of the first and second sides, the device being characterized in that the first electrode (160, 170) is shaped so as to cause a decrease in, from a first region and in the direction of at least one second region of the contact area, a current density that is liable to flow through the light-emitting structure (110).

Abstract: An electronic circuit including a semiconductor substrate having first and second opposite surfaces and electrically-insulating trenches. Each trench includes at least first and second insulating portions made of a first insulating material, extending from the first surface to the second surface, first and second intermediate portions, extending from the first surface to the second surface, made of a first filling material, and a third insulating portion extending from the first surface to the second surface, the first insulating portion being in contact with the first intermediate portion, the second insulating portion being in contact with the second intermediate portion, and the third insulating portion being interposed between the intermediate portions.

Abstract: A method for producing optoelectronic devices, including the following successive steps: providing a substrate having a first face; on the first face, forming sets of light-emitting diodes including wire-like, conical or frustoconical semiconductor elements; covering all of the first face with a layer encapsulating the light-emitting diodes; forming a conductive element that is insulated from the substrate and extends through the substrate from the second face to at least the first face; reducing the thickness of the substrate; and cutting the resulting structure in order to separate each set of light-emitting diodes.

Abstract: A connecting system having a female element including a hollow flared part for receiving and guiding a male element and a hollow mating part for mating with the male element. A part to be mated of the male element has an outside diameter that before the mating is larger than an inside diameter of the mating part of the female element, and the part to be mated of the male element is made of a material that can be strained and has a corrugated transverse cross section, so as to contract when it is plugged into the mating part of the female element, and/or the mating part of the female connection element is made of a material that can be strained and has a corrugated transverse cross section, so as to dilate when the part to be mated of the male element is plugged into it.

Abstract: A connecting system having a female element including a hollow flared part for receiving and guiding a male element and a hollow mating part for mating with the male element. A part to be mated of the male element has an outside diameter that before the mating is larger than an inside diameter of the mating part of the female element, and the part to be mated of the male element is made of a material that can be strained and has a corrugated transverse cross section, so as to contract when it is plugged into the mating part of the female element, and/or the mating part of the female connection element is made of a material that can be strained and has a corrugated transverse cross section, so as to dilate when the part to be mated of the male element is plugged into it.