Patents by Inventor Marit GRÜNDER

Marit GRÜNDER has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Processes for producing III-N single crystals, and III-N single crystal
    Patent number: 10584427
    Abstract: The present invention relates to a III-N single crystal adhering to a substrate, wherein III denotes at least one element of the third main group of the periodic table of the elements, selected from the group of Al, Ga and In, wherein the III-N single crystal exhibits, within a temperature range of an epitaxial crystal growth, a value (i) of deformation ?XX in the range of <0. Additionally or alternatively, the III-N single crystal exhibits at room temperature a value (ii) of deformation ?XX in the range of <0.
    Type: Grant
    Filed: January 30, 2018
    Date of Patent: March 10, 2020
    Assignee: FREIBERGER COMPOUND MATERIALS GMBH
    Inventors: Marit Gründer, Frank Brunner, Eberhard Richter, Frank Habel, Markus Weyers
  • PROCESSES FOR PRODUCING III-N SINGLE CRYSTALS, AND III-N SINGLE CRYSTAL
    Publication number: 20180237944
    Abstract: The present invention relates to a III-N single crystal adhering to a substrate, wherein III denotes at least one element of the third main group of the periodic table of the elements, selected from the group of Al, Ga and In, wherein the III-N single crystal exhibits, within a temperature range of an epitaxial crystal growth, a value (i) of deformation ?XX in the range of <0. Additionally or alternatively, the III-N single crystal exhibits at room temperature a value (ii) of deformation ?XX in the range of <0.
    Type: Application
    Filed: January 30, 2018
    Publication date: August 23, 2018
    Inventors: Marit GRÜNDER, Frank BRUNNER, Eberhard RICHTER, Frank HABEL, Markus WEYERS
  • Method for producing III-N single crystals, and III-N single crystal
    Patent number: 9896779
    Abstract: The present invention relates to the production of III-N templates and also the production of III-N single crystals, III signifying at least one element of the third main group of the periodic table, selected from the group of Al, Ga and In. By adjusting specific parameters during crystal growth, III-N templates can be obtained that bestow properties on the crystal layer that has grown on the foreign substrate which enable flawless III-N single crystals to be obtained in the form of templates or even with large III-N layer thickness.
    Type: Grant
    Filed: March 21, 2013
    Date of Patent: February 20, 2018
    Assignee: FREIBERGER COMPOUND MATERIALS GMBH
    Inventors: Marit Gründer, Frank Brunner, Eberhard Richter, Frank Habel, Markus Weyers
  • METHOD FOR PRODUCING III-N SINGLE CRYSTALS, AND III-N SINGLE CRYSTAL
    Publication number: 20150292111
    Abstract: The present invention relates to the production of III-N templates and also the production of III-N single crystals, III signifying at least one element of the third main group of the periodic table, selected from the group of Al, Ga and In. By adjusting specific parameters during crystal growth, III-N templates can be obtained that bestow properties on the crystal layer that has grown on the foreign substrate which enable flawless III-N single crystals to be obtained in the form of templates or even with large III-N layer thickness.
    Type: Application
    Filed: March 21, 2013
    Publication date: October 15, 2015
    Inventors: Marit GRÜNDER, Frank BRUNNER, Eberhard RICHTER, Frank HABEL, Markus WEYERS