Abstract: A semiconductor device is provided. The semiconductor device may include a semiconductor substrate including an active area, and a metal layer structure over the active area. The metal layer structure is configured to form an electrical contact. The metal layer structure includes a solder area, a buffer area, and a barrier area between the solder area and the buffer area. In the barrier area, the metal layer structure is arranged over a barrier base structure. The barrier base structure includes at least two segments extending along two different directions and a curved connecting segment connecting the at least two segments.

Abstract: An electronic circuit and a method are disclosed. The electronic circuit includes: a first transistor device having a load path between a first load path node and a second load path node; and a clamping circuit connected to the load path of the first transistor device. The clamping circuit includes: a second transistor device having a load path connected in parallel with the load path of the first transistor device, and a control node; and a drive circuit configured to drive the second transistor device. The drive circuit includes a clamping element and a resistor connected in series between the first and second load path nodes of the first transistor device. The drive circuit is configured to drive the second transistor device dependent on a voltage across the resistor. The first transistor device and the clamping circuit are integrated in a same semiconductor die.

Abstract: A semiconductor device and method is disclosed. The semiconductor device may include a semiconductor substrate including an active area, a metal layer structure over the active area, wherein the metal layer structure is configured to form an electrical contact, the metal layer structure including a solder area, a buffer area, and a barrier area between the solder area and the buffer area, wherein, in the barrier area, the metal layer structure is further away from the active area than in the solder area and in the buffer area, and wherein each of the solder area and the buffer area is in direct contact with the active area or with a wiring layer structure arranged between the active area and the metal layer structure.

Abstract: A semiconductor device includes a semiconductor body, a stress relieving layer or layer stack disposed over at least part of the semiconductor body, the stress relieving layer or layer stack comprising a plurality of openings which yield a patterned surface topography for the stress relieving layer or layer stack, and a metal layer or layer stack formed on the stress relieving layer or layer stack and occupying the plurality of openings in the stress relieving layer or layer stack. The patterned surface topography of the stress relieving layer or layer stack is transferred to a surface of the metal layer or layer stack facing away from the semiconductor body. The stress relieving layer or layer stack has a different elastic modulus than the metal layer or layer stack over a temperature range.

Abstract: A semiconductor device and method is disclosed. The semiconductor device may include a semiconductor substrate including an active area, a metal layer structure over the active area, wherein the metal layer structure is configured to form an electrical contact, the metal layer structure including a solder area, a buffer area, and a barrier area between the solder area and the buffer area, wherein, in the barrier area, the metal layer structure is further away from the active area than in the solder area and in the buffer area, and wherein each of the solder area and the buffer area is in direct contact with the active area or with a wiring layer structure arranged between the active area and the metal layer structure.

Abstract: A semiconductor device includes a semiconductor body, a stress relieving layer or layer stack disposed over at least part of the semiconductor body, the stress relieving layer or layer stack comprising a plurality of openings which yield a patterned surface topography for the stress relieving layer or layer stack, and a metal layer or layer stack formed on the stress relieving layer or layer stack and occupying the plurality of openings in the stress relieving layer or layer stack. The patterned surface topography of the stress relieving layer or layer stack is transferred to a surface of the metal layer or layer stack facing away from the semiconductor body. The stress relieving layer or layer stack has a different elastic modulus than the metal layer or layer stack over a temperature range.

Abstract: A semiconductor device includes a semiconductor body, a stress relieving layer or layer stack disposed over at least part of the semiconductor body, the stress relieving layer or layer stack comprising a plurality of openings which yield a patterned surface topography for the stress relieving layer or layer stack, and a metal layer or layer stack formed on the stress relieving layer or layer stack and occupying the plurality of openings in the stress relieving layer or layer stack. The patterned surface topography of the stress relieving layer or layer stack is transferred to a surface of the metal layer or layer stack facing away from the semiconductor body. The stress relieving layer or layer stack has a smaller elastic modulus than the metal layer or layer stack over a temperature range.

Abstract: Disclosed are a transistor device and a method. The transistor device includes a semiconductor body with a first surface, an inner region, and an edge region, a drift region of a first doping type in the inner region and the edge region, a plurality of transistor cells in the inner region, and a termination structure in the edge region. The termination structure includes a recess extending from the first surface in the edge region into the semiconductor body, and a floating compensation region with dopant atoms of a second doping type complementary to the first doping type in the drift region adjacent the recess.

Abstract: A semiconductor die includes a semiconductor circuit disposed within or over a substrate. A conductive contact pad is disposed over the substrate outside the semiconductor circuit. A floating electrical path ends at a singulated edge of the die. The electrical path is electrically coupled to the conductive contact pad.

Abstract: A semiconductor die includes a semiconductor circuit disposed within or over a substrate. A conductive contact pad is disposed over the substrate outside the semiconductor circuit. A floating electrical path ends at a singulated edge of the die. The electrical path is electrically coupled to the conductive contact pad.

Abstract: A method for semiconductor fabrication includes forming a first array of semiconductor circuitry and a second array of semiconductor circuitry separated by a singulation region and a contact region. The method also includes forming a first array of process control monitoring structures within the singulation region of a substrate. The method also includes forming a first array of contact pads disposed in the contact region. The method also includes forming electrical connections between the first array of process control monitoring structures and the first array of contact pads, wherein all external electrical connections to the first array of process control monitoring structures are made through the first array of contact pads.

Abstract: A method for semiconductor fabrication includes forming a first array of semiconductor circuitry and a second array of semiconductor circuitry separated by a singulation region and a contact region. The method also includes forming a first array of process control monitoring structures within the singulation region of a substrate. The method also includes forming a first array of contact pads disposed in the contact region. The method also includes forming electrical connections between the first array of process control monitoring structures and the first array of contact pads, wherein all external electrical connections to the first array of process control monitoring structures are made through the first array of contact pads.