Patents by Inventor Mark A. Crowder

Mark A. Crowder has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Symmetrical mask system and method for laser irradiation
    Publication number: 20030175599
    Abstract: A system and method are provided for laser irradiating a semiconductor substrate using a multi-pattern mask. The method comprises: exposing a semiconductor substrate to laser light projected through a multi-pattern mask; advancing the mask and substrate in a first direction to sequentially expose adjacent areas of the substrate to each of the mask patterns in a first predetermined order; and, advancing the mask and substrate in a second direction, opposite the first direction, to sequentially expose adjacent areas of the substrate to each of the mask patterns in the first order. In one aspect, the method further comprises: forming a multi-pattern mask having a first plurality patterns aligned in the first order with respect to the first direction and a second plurality of patterns, corresponding to the first plurality of patterns, aligned in the first order with respect to the second direction.
    Type: Application
    Filed: March 13, 2002
    Publication date: September 18, 2003
    Inventors: Apostolos Voutsas, Mark A. Crowder, Yasuhiro Mitiani
  • Substrate and method for producing variable quality substrate material
    Publication number: 20030170963
    Abstract: A substrate and a method for fabricating variable quality substrate materials are provided. The method comprises: selecting a first mask having a first mask pattern; projecting a laser beam through the first mask to anneal a first area of semiconductor substrate; creating a first condition in the first area of the semiconductor film; selecting a second mask having a second mask pattern; projecting the laser beam through the second mask to anneal a second area of the semiconductor film; and, creating a second condition in the second area of the semiconductor film, different than the first condition. More specifically, when the substrate material is silicon, the first and second conditions concern the creation of crystalline material with a quantitative measure of lattice mismatch between adjacent crystal domains. For example, the lattice mismatch between adjacent crystal domains can be measured as a number of high-angle grain boundaries per area.
    Type: Application
    Filed: March 11, 2002
    Publication date: September 11, 2003
    Inventors: Apostolos Voutsas, Yasuhiro Mitiani, Mark A. Crowder
  • Method for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidification
    Publication number: 20030119286
    Abstract: Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed.
    Type: Application
    Filed: December 3, 2002
    Publication date: June 26, 2003
    Inventors: James S. Im, Robert S. Sposili, Mark A. Crowder
  • Systems and methods using sequential lateral solidification for producing single or polycrystalline silicon thin films at low temperatures
    Patent number: 6573531
    Abstract: System and methods for processing an amorphous silicon thin film sample into a single or polycrystalline silicon thin film are disclosed.
    Type: Grant
    Filed: September 3, 1999
    Date of Patent: June 3, 2003
    Assignee: The Trustees of Columbia University in the City of New York
    Inventors: James S. Im, Robert S. Sposili, Mark A. Crowder
  • Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidification
    Publication number: 20030096489
    Abstract: Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed.
    Type: Application
    Filed: November 13, 2002
    Publication date: May 22, 2003
    Inventors: James S. Im, Robert S. Sposili, Mark A. Crowder
  • Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
    Patent number: 6555449
    Abstract: Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed.
    Type: Grant
    Filed: September 3, 1999
    Date of Patent: April 29, 2003
    Assignee: Trustees of Columbia University in the City of New York
    Inventors: James S. Im, Robert S. Sposili, Mark A. Crowder