Abstract: A method of fabricating a semiconductor device is described. In this method, a starting substrate of sufficient thickness is selected that has the required defect density levels, which may result in an undesirable doping level. Then a semiconductor layer having a desired doping level is formed on the starting substrate. The resulting semiconductor layer has the required defect density and doping levels for the final product application. After active components, electrical conductors, and any other needed structures are formed on the semiconductor layer, the starting substrate is removed leaving a desired thickness of the semiconductor layer. In a VECSEL application, the active components can be a gain cavity, where the semiconductor layer has the necessary defect density and doping levels to maximize wall plug efficiency (WPE). In one embodiment, the doping of the semiconductor layer is not uniform. For example, a majority of the layer is doped at a low level and the remainder is doped at a much higher level.

Abstract: The volume of a water strata in an oil production reservoir is controlled by reinjecting separated water into that water strata. A production string is extended into a portion of a wellbore that extends laterally within the oil strata of the reservoir. A liquid flow including a hydrocarbon phase and a water phase is conducted from the oil strata into the laterally extending portion of the wellbore at a production zone. The water phase is separated from the liquid hydrocarbon phase within the production string, and then reinjected back into the water strata of the same reservoir from which it came, at a reinjection zone disposed below the production zone.

Abstract: A method and system for the downhole separation of a water and oil mixture and disposal of separated water utilizing a hydrostatic pressure head is disclosed. A separator apparatus is located in a wellbore at a depth substantially above a water disposal formation. A mixture of oil and water is received from an oil producing formation and delivered to the separator apparatus. The oil and water mixture is separated into separated water and separated oil by the separator apparatus. The separated oil is delivered to the well surface. The separated water is discharged from the separator apparatus into the wellbore creating a column of water above the water disposal formation. The hydrostatic pressure created by the column of water is ideally sufficient to cause the separated water to dissipate into the water disposal formation.

Abstract: A monolithic, electrically-insulating substrate that contains a series of notched grooves is fabricated. The substrate is then metalized so that only the top surface and one wall adjacent to the notch are metalized. Within the grooves is located a laser bar, an electrically-conductive ribbon or contact bar and an elastomer which secures/registers the laser bar and ribbon (or contact bar) firmly along the wall of the groove that is adjacent to the notch. The invention includes several embodiments for providing electrical contact to the corresponding top surface of the adjacent wall. In one embodiment, after the bar is located in the proper position, the electrically conductive ribbon is bent so that it makes electrical contact with the adjoining metalized top side of the heatsink.

Abstract: A semiconductor heterostructure device is disclosed which includes a first semiconductor layer having a barrier layer disposed thereon, the barrier layer being formed of a semiconductor material having a wider bandgap than the material of the first semiconductor layer. A carrier transport layer is disposed on the barrier layer, the carrier transport layer being formed of a semiconductor material having a narrower bandgap than the material of the barrier layer. A contact layer is disposed on the carrier transport layer. A negative potential is applied to the contact layer with respect to the first semiconductor layer. In operation, for small voltages, under the indicated bias configuration, electrons supplied to the carrier transport layer by the source of negative potential supply will be blocked at the barrier presented by the larger bandgap barrier layer, and little current will flow.