Patents by Inventor Mark A. Fodor
Mark A. Fodor has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20080152838Abstract: Embodiments in accordance with the present invention relate to various techniques which may be employed alone or in combination, to reduce or eliminate the deposition of material on the bevel of a semiconductor workpiece. In one approach, a shadow ring overlies the edge of the substrate to impede the flow of gases to bevel regions. The geometric feature at the edge of the shadow ring directs the flow of gases toward the wafer in order to maintain thickness uniformity across the wafer while shadowing the edge. In another approach, a substrate heater/support is configured to flow purge gases to the edge of a substrate being supported. These purge gases prevent process gases from reaching the substrate edge and depositing material on bevel regions.Type: ApplicationFiled: October 23, 2007Publication date: June 26, 2008Applicant: APPLIED MATERIALS, INC.Inventors: SOOVO SEN, MARK A. FODOR, VISWESWAREN SIVARAMAKRISHNAN, JUNTING LIU
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Patent number: 7354288Abstract: A substrate support comprises a ceramic disc with an electrode that is chargeable through an electrode terminal. An electrical connector connects an external power source to the electrode terminal. The electrical connector has a pair of opposing pincer arms, a groove sized to fit around the electrode terminal, and a pair of through holes to receive a tightening assembly capable of tightening the opposing pincer arms about the electrode terminal.Type: GrantFiled: June 3, 2005Date of Patent: April 8, 2008Assignee: Applied Materials, Inc.Inventors: Kazutoshi Maehara, Visweswaren Sivaramakrishnan, Kentaro Wada, Mark A. Fodor, Andrzei Kaszuba
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Publication number: 20060272774Abstract: A substrate support comprises a ceramic disc with an electrode that is chargeable through an electrode terminal. An electrical connector connects an external power source to the electrode terminal. The electrical connector has a pair of opposing pincer arms, a groove sized to fit around the electrode terminal, and a pair of through holes to receive a tightening assembly capable of tightening the opposing pincer arms about the electrode terminal.Type: ApplicationFiled: June 3, 2005Publication date: December 7, 2006Inventors: Kazutoshi Maehara, Visweswaren Sivaramakrishnan, Kentaro Wada, Mark Fodor, Andrzei Kaszuba
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Patent number: 7024105Abstract: A substrate heater assembly for supporting a substrate of a predetermined standardized diameter during processing is provided. In one embodiment, the substrate heater assembly includes a body having an upper surface, a lower surface and an embedded heating element. A substrate support surface is formed in the upper surface of the body and defines a portion of a substrate receiving pocket. An annular wall is oriented perpendicular to the upper surface and has a length of at least one half a thickness of the substrate. The wall bounds an outer perimeter of the substrate receiving pocket and has a diameter less than about 0.5 mm greater than the predetermined substrate diameter.Type: GrantFiled: October 10, 2003Date of Patent: April 4, 2006Assignee: Applied Materials Inc.Inventors: Mark A. Fodor, Sophia M. Velastegui, Soovo Sen, Visweswaren Sivaramakrishnan, Peter Wai-Man Lee, Mario David Silvetti
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Publication number: 20050196971Abstract: Embodiments in accordance with the present invention relate to various techniques which may be employed alone or in combination, to reduce or eliminate the deposition of material on the bevel of a semiconductor workpiece. In one approach, a shadow ring overlies the edge of the substrate to impede the flow of gases to bevel regions. The geometric feature at the edge of the shadow ring directs the flow of gases toward the wafer in order to maintain thickness uniformity across the wafer while shadowing the edge. In another approach, a substrate heater/support is configured to flow purge gases to the edge of a substrate being supported. These purge gases prevent process gases from reaching the substrate edge and depositing material on bevel regions.Type: ApplicationFiled: January 26, 2005Publication date: September 8, 2005Applicant: Applied Materials, Inc.Inventors: Soovo Sen, Mark Fodor, Visweswaren Sivaramakrishnan, Junting Liu
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Publication number: 20050150452Abstract: The present invention provides a process kit for a semiconductor processing chamber. The processing chamber is a vacuum processing chamber that includes a chamber body defining an interior processing region. The processing region receives a substrate for processing, and also supports equipment pieces of the process kit. The process kit includes a pumping liner configured to be placed within the processing region of the processing chamber, and a C-channel liner configured to be placed along an outer diameter of the pumping liner. The pumping liner and the C-channel liner have novel interlocking features designed to inhibit parasitic pumping of processing or cleaning gases from the processing region. The invention further provides a semiconductor processing chamber having an improved process kit, such as the kit described. In one arrangement, the chamber is a tandem processing chamber.Type: ApplicationFiled: January 14, 2004Publication date: July 14, 2005Inventors: Soovo Sen, Mark Fodor, Martin Seamons, Priya Kulkarni, Visweswaren Sivaramakrishnan, Sudha Rathi, Tsutomu Shimayama, Thomas Nowak, Wendy Yeh
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Publication number: 20050078953Abstract: A substrate heater assembly for supporting a substrate of a predetermined standardized diameter during processing is provided. In one embodiment, the substrate heater assembly includes a body having an upper surface, a lower surface and an embedded heating element. A substrate support surface is formed in the upper surface of the body and defines a portion of a substrate receiving pocket. An annular wall is oriented perpendicular to the upper surface and has a length of at least one half a thickness of the substrate. The wall bounds an outer perimeter of the substrate receiving pocket and has a diameter less than about 0.5 mm greater than the predetermined substrate diameter.Type: ApplicationFiled: October 10, 2003Publication date: April 14, 2005Inventors: Mark Fodor, Sophia Velastegui, Soovo Sen, Visweswaren Sivaramakrishnan, Peter Lee, Mario Silvetti
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Patent number: 6689930Abstract: An apparatus for preventing particulate matter and residue build-up within a vacuum exhaust line of a semiconductor processing device. The apparatus uses RF energy to form excite the constituents of particulate matter exhausted from a semiconductor processing chamber into a plasma state such that the constituents react to form gaseous products that may be pumped through the vacuum line. The apparatus may include a collection chamber structured and arranged to collect particulate matter flowing through the apparatus and inhibiting egress of the particulate matter from the apparatus. The apparatus may further include an electrostatic collector to enhance particle collection in the collection chamber and to further inhibit egress of the particulate matter.Type: GrantFiled: June 30, 2000Date of Patent: February 10, 2004Assignee: Applied Materials Inc.Inventors: Ben Pang, David Cheung, William N. Taylor, Jr., Sebastion Raoux, Mark Fodor
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Patent number: 6680420Abstract: An apparatus for preventing particulate matter and residue build-up within a vacuum exhaust line of a semiconductor processing device. The apparatus uses RF energy to excite the constituents of particulate matter exhausted from a semiconductor processing chamber into a plasma state such that the constituents react to form gaseous products that may be pumped through the vacuum line. The apparatus may include a collection chamber structured and arranged to collect particulate matter flowing through the apparatus and inhibiting egress of the particulate matter from the apparatus. The apparatus may further include an electrostatic collector to enhance particle collection in the collection chamber and to further inhibit egress of the particulate matter.Type: GrantFiled: December 4, 2000Date of Patent: January 20, 2004Assignee: Applied Materials Inc.Inventors: Ben Pang, David Cheung, William N. Taylor, Jr., Sebastien Raoux, Mark Fodor
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Patent number: 6517913Abstract: An apparatus for converting PFC gases exhausted from semiconductor processing equipment to less harmful, non-PFC gases. One embodiment of the apparatus includes a silicon filter and a plasma generation system. The plasma generation system forms a plasma from the effluent PFC gases. Constituents from the plasma react with silicon and/or oxygen in the filter and convert the effluent PFC gases to less harmful, non-PFC gaseous products and byproducts. Another embodiment includes a plasma generation system and a particle trapping and collection system. The particle trapping and collection system traps silicon containing residue from deposition processes that produces such residue, and the plasma generation system forms a plasma from the effluent PFC gases. Constituents from the plasma react with the collected residue to convert the effluent PFC gases to less harmful, non-PFC gaseous products and byproducts.Type: GrantFiled: August 3, 2000Date of Patent: February 11, 2003Assignee: Applied Materials, Inc.Inventors: David Cheung, Sebastien Raoux, Judy H. Huang, William N. Taylor, Jr., Mark Fodor, Kevin Fairbairn
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Patent number: 6506994Abstract: A heating chamber assembly for heating or maintaining the temperature of at least one wafer, employs thick film heater plates stacked at an appropriate distance to form a slot between each pair of adjacent heater plate surfaces. The heating chamber assembly may be employed adjacent one or more processing chambers to form a preheat station separate from the processing chambers, or may be incorporated in the load lock of one or more such processing chambers. The thick film heater plates are more efficient and have a better response time than conventional heat plates. A chamber surrounding the stack of heater plates is pressure sealable and nay include a purge gas inlet for supply purge gas thereto under pressure. A door to the chamber opens to allow wafers to be inserted or removed and forms a pressure seal upon closing. The slots in the stack are alignable with the door for loading and unloading of wafers.Type: GrantFiled: June 15, 2001Date of Patent: January 14, 2003Assignee: Applied Materials, Inc.Inventors: Yen-Kun Victor Wang, Mark Fodor, Chen-An Chen, Himanshu Pokharna, Son T. Nguyen, Kelly Fong, Inna Shmurun
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Publication number: 20020190051Abstract: A heating chamber assembly for heating or maintaining the temperature of at least one wafer, employs thick film heater plates stacked at an appropriate distance to form a slot between each pair of adjacent heater plate surfaces. The heating chamber assembly may be employed adjacent one or more processing chambers to form a preheat station separate from the processing chambers, or may be incorporated in the load lock of one or more such processing chambers. The thick film heater plates are more efficient and have a better response time than conventional heat plates. A chamber surrounding the stack of heater plates is pressure sealable and may include a purge gas inlet for supply purge gas thereto under pressure. A door to the chamber opens to allow wafers to be inserted or removed and forms a pressure seal upon closing. The slots in the stack are alignable with the door for loading and unloading of wafers.Type: ApplicationFiled: June 15, 2001Publication date: December 19, 2002Applicant: Applied Materials, Inc.Inventors: Yen-Kun Victor Wang, Mark Fodor, Chen-An Chen, Himanshu Pokharna, Son T. Nguyen, Kelly Fong, Inna Shmurun
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Patent number: 6358573Abstract: A substrate processing system that includes a ceramic substrate holder having an RF electrode embedded within the substrate holder and a gas inlet manifold spaced apart from the substrate holder. The gas inlet manifold supplies one or more process gases through multiple conical holes to a reaction zone of a substrate processing chamber within the processing system and also acts as a second RF electrode. Each conical hole has an outlet that opens into the reaction zone and an inlet spaced apart from the outlet that is smaller in diameter than said outlet. A mixed frequency RF power supply is connected to the substrate processing system with a high frequency RF power source connected to the gas inlet manifold electrode and a low frequency RF power source connected to the substrate holder electrode. An RF filter and matching network decouples the high frequency waveform from the low frequency waveform.Type: GrantFiled: June 2, 2000Date of Patent: March 19, 2002Assignee: Applied Materials, Inc.Inventors: Sébastien Raoux, Mandar Mudholkar, William N. Taylor, Mark Fodor, Judy Huang, David Silvetti, David Cheung, Kevin Fairbairn
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Patent number: 6354241Abstract: An apparatus and method for preventing particulate matter and residue build-up within a vacuum exhaust line of a semiconductor-processing device. The apparatus includes a vessel chamber having an inlet, an outlet and a fluid conduit between the two that fluidly couples the outlet with the inlet. The fluid conduit includes first and second collection sections. The first collection section includes a first plurality of electrodes aligned parallel to a first plane and the second collection section includes a second plurality of electrodes aligned parallel to a second plane that is substantially perpendicular to the first plane. The electrodes are connected to a voltage differential to form an electrostatic particle collector that traps electrically charged particles and particulate matter flowing through the fluid conduit. Particles are collected on the electrodes within the fluid conduit during substrate processing operations such as CVD deposition steps.Type: GrantFiled: July 15, 1999Date of Patent: March 12, 2002Assignee: Applied Materials, Inc.Inventors: Tsutomu Tanaka, Chau Nguyen, Hari Ponnekanti, Kevin Fairbairn, Sébastien Raoux, Mark Fodor
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Publication number: 20010016674Abstract: An apparatus for preventing particulate matter and residue build-up within a vacuum exhaust line of a semiconductor processing device. The apparatus uses RF energy to form excite the constituents of particulate matter exhausted from a semiconductor processing chamber into a plasma state such that the constituents react to form gaseous products that may be pumped through the vacuum line. The apparatus may include a collection chamber structured and arranged to collect particulate matter flowing through the apparatus and inhibiting egress of the particulate matter from the apparatus. The apparatus may further include an electrostatic collector to enhance particle collection in the collection chamber and to further inhibit egress of the particulate matter.Type: ApplicationFiled: December 4, 2000Publication date: August 23, 2001Applicant: Applied Materials , Inc.Inventors: Ben Pang, David Cheung, William N. Taylor, Sebastien Raoux, Mark Fodor
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Patent number: 6193802Abstract: An apparatus for minimizing deposition in an exhaust line of a substrate processing chamber. The apparatus includes first and second electrodes having opposing surfaces that define a fluid conduit between them. The fluid conduit includes an inlet, an outlet and a collection chamber between the inlet and the outlet. The apparatus is connected at its inlet to receive the exhaust of the substrate processing chamber. The collection chamber is structured and arranged to collect particulate matter flowing through the fluid conduit and to inhibit egress of the particulate matter from the collection chamber. A plasma generation system supplies power to the electrodes to form a plasma from etchant gases within the fluid conduit. Constituents from the plasma react with the particulate matter collected in the collection chamber to form gaseous products that may be pumped out of the fluid conduit.Type: GrantFiled: October 30, 1996Date of Patent: February 27, 2001Assignee: Applied Materials, Inc.Inventors: Ben Pang, David Cheung, William N. Taylor, Jr., Sebastien Raoux, Mark Fodor
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Patent number: 6194628Abstract: An apparatus for preventing particulate matter and residue build-up within a vacuum exhaust line of a semiconductor processing device. The apparatus uses RF energy to form excite the constituents of particulate matter exhausted from a semiconductor processing chamber into a plasma state such that the constituents react to form gaseous products that may be pumped through the vacuum line. The apparatus may include a collection chamber structured and arranged to collect particulate matter flowing through the apparatus and inhibiting egress of the particulate matter from the apparatus. The apparatus may further include an electrostatic collector to enhance particle collection in the collection chamber and to further inhibit egress of the particulate matter.Type: GrantFiled: September 25, 1995Date of Patent: February 27, 2001Assignee: Applied Materials, Inc.Inventors: Ben Pang, David Cheung, William N. Taylor, Jr., Sebastien Raoux, Mark Fodor
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Patent number: 6187072Abstract: An apparatus for converting PFC gases exhausted from semiconductor processing equipment to less harmful, non-PFC gases. One embodiment of the apparatus includes a silicon filter and a plasma generation system. The plasma generation system forms a plasma from the effluent PFC gases. Constituents from the plasma react with silicon and/or oxygen in the filter and convert the effluent PFC gases to less harmful, non-PFC gaseous products and byproducts. Another embodiment includes a plasma generation system and a particle trapping and collection system. The particle trapping and collection system traps silicon containing residue from deposition processes that produces such residue, and the plasma generation system forms a plasma from the effluent PFC gases. Constituents from the plasma react with the collected residue to convert the effluent PFC gases to less harmful, non-PFC gaseous products and byproducts.Type: GrantFiled: October 30, 1996Date of Patent: February 13, 2001Assignee: Applied Materials, Inc.Inventors: David Cheung, Sebastien Raoux, Judy H. Huang, William N. Taylor, Jr., Mark Fodor, Kevin Fairbairn
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Patent number: 6098568Abstract: A substrate processing system that includes a ceramic substrate holder having an RF electrode embedded within the substrate holder and a gas inlet manifold spaced apart from the substrate holder. The gas inlet manifold supplies one or more process gases through multiple conical holes to a reaction zone of a substrate processing chamber within the processing system and also acts as a second RF electrode. Each conical hole has an outlet that opens into the reaction zone and an inlet spaced apart from the outlet that is smaller in diameter than said outlet. A mixed frequency RF power supply is connected to the substrate processing system with a high frequency RF power source connected to the gas inlet manifold electrode and a low frequency RF power source connected to the substrate holder electrode. An RF filter and matching network decouples the high frequency waveform from the low frequency waveform.Type: GrantFiled: December 1, 1997Date of Patent: August 8, 2000Assignee: Applied Materials, Inc.Inventors: Sebastien Raoux, Mandar Mudholkar, William N. Taylor, Mark Fodor, Judy Huang, David Silvetti, David Cheung, Kevin Fairbairn
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Patent number: 5959409Abstract: Non-bonded ceramic protection is provided for metal surfaces in a plasma processing chamber, particularly heated metal electrode surfaces, in a plasma processing chamber, to prevent or inhibit attack of the heated metal surfaces by chemically aggressive species generated in the plasma during processing of materials, without bonding the ceramic material to the metal surface. In accordance with the invention the ceramic protection material comprises a thin cover material which is fitted closely, but not bonded, to the heated metal. This form of ceramic protection is particularly useful for protecting the surfaces of glow discharge electrodes and gas distribution apparatus in plasma process chambers used for processing semiconductor substrates to form integrated circuit structures.Type: GrantFiled: August 13, 1997Date of Patent: September 28, 1999Assignee: Applied Materials, Inc.Inventors: Charles N. Dornfest, John M. White, Craig A. Bercaw, Hiroyuki Steven Tomosawa, Mark A. Fodor