Abstract: An absorbing composition is described herein that includes at least one inorganic-based compound, at least one absorbing compound, and at least one material modification agent. In addition, methods of making an absorbing composition are also described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) allowing the reaction mixture to form the absorbing composition at room temperature. Another method of making an absorbing composition includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) heating the reaction mixture to form the absorbing composition.

Abstract: An absorbing composition is described herein that includes at least one inorganic-based compound, at least one absorbing compound, and at least one material modification agent. In addition, methods of making an absorbing composition are also described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) allowing the reaction mixture to form the absorbing composition at room temperature. Another method of making an absorbing composition includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) heating the reaction mixture to form the absorbing composition.

Abstract: An absorbing composition is described herein that includes at least one inorganic-based compound, at least one absorbing compound, and at least one material modification agent. In addition, methods of making an absorbing composition are also described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, and one or more solvents to form a reaction mixture, wherein the at least one material modification agent comprises at least one acid and water; and b) heating the reaction mixture to form an absorbing material, a coating or a film.

Abstract: The present invention relates to exposing a bond pad on a substrate. A bond pad is formed over a silicon substrate with the subsequent formation of a dielectric over the bond pad. A patterned resist is formed, and at least opening is processed to form a sloped sidewall profile. The sloped sidewall profile is subsequently etched and transferred to the dielectric layer, exposing the bond pad.

Abstract: An absorbing composition is described herein that includes at least one inorganic-based compound, at least one absorbing compound, and at least one material modification agent. In addition, methods of making an absorbing composition are also described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) allowing the reaction mixture to form the absorbing composition at room temperature. Another method of making an absorbing composition includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) heating the reaction mixture to form the absorbing composition.

Abstract: The present invention relates to exposing a bond pad on a substrate. A bond pad is formed over a silicon substrate with the subsequent formation of a dielectric over the bond pad. A patterned resist is formed, and at least opening is processed to form a sloped sidewall profile. The sloped sidewall profile is subsequently etched and transferred to the dielectric layer, exposing the bond pad.

Abstract: A method for forming contacts with vertical sidewalls, high aspect ratios, improved salicide and photoresist etch selectivity at submicron dimensions. In one currently preferred embodiment, an opening is formed in a dual oxide layer by etching the undoped oxide layer at a first rate and then etching the doped oxide layer at a second rate. The etch process is performed in a low density parallel plate reactor. The process parameters of the etch are fixed in ranges which optimize the etch process and allow greater control over the critical dimensions of the opening. For example, the oxide layer is etched at a pressure in the range of approximately 100-300 mTorr and with an etch chemistry having a CHF.sub.3 :CF.sub.4 gas flow ratio in the range of approximately 3:1-1:1, respectively.