Patents by Inventor Mark A. Hartney

Mark A. Hartney has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Positive resist pattern formation through focused ion beam exposure and surface barrier silylation
    Patent number: 5362606
    Abstract: A resist exposed to a micron or sub-micron pattern of highly absorbed ion beams forms a highly crosslinked barrier layer in the exposed regions of the resist surface. The complementary surface regions are silylated in a silicon-containing reagent, and the exposed regions are then removed by a plasma etch. Pattern definition is enhanced by limiting the exposure and the silylation to the surface of the resist. The process allows feature definition below 1000 Angstroms using a relatively inexpensive single element low energy ion source.
    Type: Grant
    Filed: August 7, 1992
    Date of Patent: November 8, 1994
    Assignee: Massachusetts Institute of Technology
    Inventors: Mark A. Hartney, John Melngailis, David C. Shaver
  • Method of patterning a phenolic polymer film without photoactive additive through exposure to high energy radiation below 225 nm with subsequent organometallic treatment and the associated imaged article
    Patent number: 5318870
    Abstract: A phenolic resist without photoadditives achieves enhanced sensitivity when exposed to patterned short wavelength radiation to form a highly crosslinked barrier layer in the exposed regions of the resist surface. The complementary surface regions are silylated in a silicon-containing reagent, and the exposed regions are readily removed by a oxygen RIE plasma. The laser exposure is a reciprocal process allowing precise control. Pattern definition is enhanced by limiting the exposure and the silylation to the surface of the resist.
    Type: Grant
    Filed: July 31, 1992
    Date of Patent: June 7, 1994
    Assignee: Massachusetts Institute of Technology
    Inventor: Mark A. Hartney
  • Surface barrier silylation of novolak film without photoactive additive patterned with 193 nm excimer laser
    Patent number: 5139925
    Abstract: A resist exposed to patterned radiation at 193 nm forms a highly crosslinked barrier layer in the exposed regions of the resist surface. The complementary surface regions are silylated in a silicon-containing reagent, and the exposed regions are readily removed by a oxygen RIE plasma. The laser exposure is a reciprocal process allowing precise control. Pattern definition is enhanced by limiting the exposure and the silylation to the surface of the resist.
    Type: Grant
    Filed: October 18, 1989
    Date of Patent: August 18, 1992
    Assignee: Massachusetts Institute of Technology
    Inventor: Mark A. Hartney
  • Processes involving lithographic materials
    Patent number: 4892617
    Abstract: Extremely useful compositions for delineation of materials utilized in device applications have been found. These compositions include a polymer having segments that are at least 10 monomer units long of a first entity and segments again at least 10 monomer units long of a second entity. The monomer units are chosen so that each segment type provides a specific chemical characteristic to the polymer.
    Type: Grant
    Filed: October 19, 1987
    Date of Patent: January 9, 1990
    Assignee: American Telephone & Telegraph Company, AT&T Bell Laboratories
    Inventors: Frank S. Bates, Mark A. Hartney, Anthony E. Novembre