Abstract: Low mass-per-unit-area plastic film, preferably polyimide, prepared by a process of controlled treating of a supply of plastic film, possibly with one surface reflectively coated, at a microlithography workstation with included photoablation optics. This treatment achieves significant controlled removal of material in a selected pattern by providing relative motion between untreated plastic film and the workstation's photoablation optics while controlling photoablation of a pattern in the film. The material has a significant quantity of the mass of its plastic removed by photoablation, leaving a tessellated pattern of ridges surrounding individual wells. The resulting low-mass, rip-resistant film retains the general attributes of a large-area plastic film. The treated film also retains its reflective surface, on which amorphous silicon may be deposited. The silicon may be thereafter crystallized, utilizing the same optics, and used for fabrication of microelectronics.

Abstract: Low mass-per-unit-area plastic film, preferably polyimide, prepared by a process of controlled treating of a supply of plastic film, possibly with one surface reflectively coated, at a microlithography workstation with included photoablation optics. This treatment achieves significant controlled removal of material in a selected pattern by providing relative motion between untreated plastic film and the workstation's photoablation optics while controlling photoablation of a pattern in the film. The material has a significant quantity of the mass of its plastic removed by photoablation, leaving a tessellated pattern of ridges surrounding individual wells. The resulting low-mass, rip-resistant film retains the general attributes of a large-area plastic film. The treated film also retains its reflective surface, on which amorphous silicon may be deposited. The silicon may be thereafter crystallized, utilizing the same optics, and used for fabrication of microelectronics.

Abstract: Capillary discharge extreme ultraviolet lamp sources for EUV microlithography and other applications. The invention covers operating conditions for a pulsed capillary discharge lamp for EUVL and other applications such as resist exposure tools, microscopy, interferometry, metrology, biology and pathology. Techniques and processes are described to mitigate against capillary bore erosion, pressure pulse generation, and debris formation in capillary discharge-powered lamps operating in the EUV. Additional materials are described for constructing capillary discharge devices fore EUVL and related applications. Further, lamp designs and configurations are described for lamps using gasses and metal vapors as the radiating species.