Abstract: Wellbore apparatus has been invented which, in at least certain aspects, includes a wellbore apparatus having a tubular member with a top end, a bottom end, a hollow portion, and a window therethrough, a sleeve positioned within the hollow portion of the tubular member, the sleeve having a top end and a bottom end, a diverter apparatus within or outside the tubular member and, optionally, below the bottom end of the sleeve, the sleeve movable so that the diverter, and the diverter directs the sleeve to the window and through the window into a bore extending beyond the window, and the window having an edge therearound to which the top end of the sleeve is weldable to sealingly secure the sleeve at the window.

Abstract: Wellbore liner apparatus has been invented which, in one aspect, includes at least one tubular member for lining at least part of a lateral wellbore extending from a primary wellbore in the earth, at least one coupling bushing connected to the at least one tubular member and disposed in the primary wellbore, the coupling bushing having a bore therethrough from a top to a bottom thereof. In one aspect, the wellbore liner apparatus has two coupling bushings and a first tubular member and a second tubular member, the first tubular member secured to and extending down from the first coupling bushing to the second coupling bushing which is secured thereto, the second tubular member secured to and extending down from the second coupling bushing, with part of the second tubular member lining the lateral wellbore. Such systems are combinable with a wellbore milling system so that communication between the primary wellbore and the interior of the liner may be reestablished.

Abstract: Alkyl arsines are made by a reaction of gaseous arsine and the corresponding gaseous olefin in contact with at least one Bronsted acid catalyst. Products produced thereby are mono- and di-substituted arsines, e.g. alkyl and di-alkyl arsines, which contain substantially no metallic or oxygenating impurities.

Abstract: Alkyl arsines are made by a reaction of gaseous arsine and the corresponding gaseous olefin in contact with at least one Bronsted acid catalyst. Products produced thereby are mono- and di-substituted arsines, e.g. alkyl and di-alkyl arsines, which contain substantially no metallic or oxygenating impurities.

Abstract: Alkylphosphines are made by a reaction of gaseous phosphine and the corresponding gaseous olefin in contact with at least one non-oxidizing acid catalyst. Products produced thereby are alkylphosphines which contain substantially no metallic or oxygenating impurities. The process is a continuous process and employs a mineral acid catalyst either in solid form or as a liquid supported on a solid, inert material.

Abstract: High phosphorus polyphosphides, namely MP.sub.x, where M is an alkali metal (Li, Na, K, Rb, and Cs) or metals mimicking the bonding behavior of an alkali metal, and x=7 to 15 or very much greater than 15 (new forms of phosphorus) are useful semiconductors in their crystalline, polycrystalline and amorphous forms (boules and films). MP.sub.15 appears to have the best properties and KP.sub.15 is the easier to synthesize. P may include other pnictides as well as other trivalent atomic species. Resistance lowering may be accomplished by doping with Ni, Fe, Cr, and other metals having occupied d or f outer electronic levels; or by incorporation of As and other pnictides. Top contacts forming junction devices doped with Ni and employing Ni as a back contact comprise Cu, Al, Mg, Ni, Au, Ag, and Ti. Photovoltaic, photoresistive, and photoluminescent devices are also disclosed. All semiconductor applications appear feasible.

Abstract: High phosphorus polyphosphides, namely MP.sub.x, where M is an alkali metal (Li, Na, K, Rb, and Cs) or metals mimicking the bonding behavior of an alkali metal, and x=7 to 15 or very much greater than 15 (new forms of phosphorus) are useful semiconducutors in their crystalline, polycrystalline and amorphous forms (boules and films). MP.sub.15 appears to have the best properties and KP.sub.15 is the easier to synthesize. P may include other pnictides as well as other trivalent atomic species. Resistance lowering may be accomplished by doping with Ni, Fe, Cr, and other metals having occupied d or f outer electronic levels; or by incorporation of As and other pnictides. Top contacts forming junction devices doped with Ni and employing Ni as a back contact comprise Cu, Al, Mg, Ni, Au, Ag, and Ti. Photovoltaic, photoresistive, and photoluminescent devices are also disclosed. All semiconductor applications appear feasible.

Abstract: High phosphorus polyphosphides, namely MP.sub.x, where M is an alkali metal (Li, Na, K, Rb, and Cs) or metals mimicking the bonding behavior of an alkali metal, and x=7 to 15 or very much greater than 15 (new forms of phosphorus) are useful semiconductors in their crystalline, polycrystalline and amorphous forms (boules and films). MP.sub.15 appears to have the best properties and KP.sub.15 is the easier to synthesize. P may include other pnictides as well as other trivalent atomic species. Resistance lowering may be accomplished by doping with Ni, Fe, Cr, and other metals having occupied d or f outer electronic levels; or by incorporation of As and other pnictides. Top contacts forming junction devices doped with Ni and employing Ni as a back contact comprise Cu, Al, Mg, Ni, Au, Ag, and Ti. Photovoltaic, photoresistive, and photoluminescent devices are also disclosed. All semiconductor applications appear feasible.

Abstract: High phosphorus polyphosphides, namely MP.sub.x, where M is an alkali metal (Li, Na, K, Rb, and Cs) or metals mimicking the bonding behavior of an alkali metal, and where x=7 to 15 or very much greater than 15 (new forms of phosphorus) are useful semiconductors in their crystalline, polycrystalline and amorphous forms (boules and films). MP.sub.15 appears to have the best properties and KP.sub.15 is the easier to synthesize. P may include other pnictides as well as other trivalent atomic species. Resistance lowering may be accomplished by doping with Ni, Fe, Cr, and other metals having occupied d or f outer electronic levels; or by incorporation of As and other pnictides. Rectifying Schottky junction devices doped with Ni and employing Ni as a back contact comprise Cu, Al, Mg, Ni, Au, Ag, and Ti as junction forming top contacts. Photovoltaic, photoresistive, and photoluminescent devices are also disclosed. All semiconductor applications appear feasible.

Abstract: MP.sub.15, where M is an alkali metal is used in a generator of P.sub.4 gas. KP.sub.15 is preferred. The generator is heated to produce the P.sub.4 gas. The generator may be used in various deposition processes such as chemical vapor deposition, vacuum evaporation, and molecular beam deposition. It is particularly useful in high vacuum processes below 10.sup.-3 Torr, particularly below 10.sup.-4 Torr such as vacuum evaporation and molecular beam deposition, for example vapor phase epitaxy and molecular beam epitaxy.

Abstract: Monoclinic phosphorus is produced in a single source vapor transport apparatus comprising a sealed evacuated ampoule containing a mixture or compound of phosphorus and an alkali metal with the phosphorus to alkali metal ratio being 11 or greater. The charge is heated to 550.degree.-560.degree. C. and the monoclinic phosphorus crystals are formed on the cooler surface at the top of the ampoule over the temperature range of 500.degree.-560.degree. C. The preferred heating temperature is in the neighborhood of 555.degree. C. and the preferred deposition temperature is in the neighborhood of 539.degree. C. Alkali metals that may be employed include sodium, potassium, rubidium and cesium. The monoclinic phosphorus crystals form in two habits. Those formed in the presence of sodium and cesium are in the form of flat square platelets up to 4 mm on a side and 2 mm thick. These platelets may be easily cleaved into thinner platelets, like mica.

Abstract: Liquid white phosphorus is distilled from red phosphorus in vacuo at 480.degree.-490.degree. C. The vapor is transferred in a conduit maintained at 250.degree. C. and condensed into liquid white phosphorus at room temperature. The liquid white phosphorus is then filtered to eliminate any condensed red phosphorus. The clear, colorless phosphorus produced may be utilized as a source of P.sub.4 species for chemical vapor deposition, sputtering, vacuum deposition, and molecular beam deposition of phosphorus, polyphosphide, and other phosphorus compound films for semiconductor and other applications including insulation and passivation.

Abstract: High phosphorus polyphosphides, namely MP.sub.x, where M is an alkali metal (Li, Na, K, Rb, and Cs) or metals mimicking the bonding behavior of an alkali metal, and where x=7 to 15 or very much greater than 15 (new forms of phosphorus) are useful semiconductors in their crystalline, polycrystalline and amorphous forms (boules and films). MP.sub.15 appears to have the best properties and KP.sub.15 is the easier to synthesize. P may include other pnictides as well as other trivalent atomic species. Resistance lowering may be accomplished by doping with Ni, Fe, Cr, and other metals having occupied d or f outer electronic levels; or by incorporation of As and other pnictides. Rectifying Schottky junction devices doped with Ni and employing Ni as a back contact comprise Cu, Al, Mg, Ni, Au, Ag, and Ti as junction forming top contacts. Photovoltaic, photoresistive, and photoluminescent devices are also disclosed. All semiconductor applications appear feasible.

Abstract: A process for the preparation of organophosphorus derivatives of organic hydroxyl or sulfhydryl compounds which includes the step of electrolyzing said organic hydroxyl or sulfhydryl compounds in an electrochemical cell having an anode comprising ferrophosphorus.

Abstract: A process for the preparation of organophosphorus derivatives of organic hydroxyl or sulfhydryl compounds which includes the step of electrolyzing said organic hydroxyl or sulfhydryl compounds in an electrochemical cell having an anode comprising elemental phosphorus.

Abstract: The invention is a process for purifying elemental yellow phosphorus by contacting the yellow phosphorus with an aliphatic alcohol-tetraalkyl ammonium halide solution which effectively removes impurities and produces a colorless product.

Abstract: Metal alkoxides, such as antimony glyoxide, are produced in the anolyte of a compartmented electrochemical cell, characterized by the seperation of the anolyte from the catholyte by an anion-exchange membrane. The anode comprises the sacrifical metal; the cathode is an indifferent material. Monohydric metal alkoxides also can be produced.

Abstract: A continuous process for the electrochemical production of insoluble metal alkoxides comprises the steps of continuously removing the slurry of electrolyte and product from the cell, separating the product from the electrolyte, and returning the clarified electrolyte to the cell.

Abstract: The invention is an improved method for regenerating liquid streams which contain sulfur dioxide. The method comprises providing a body of liquid which contains sulfur dioxide having a free space above the surface; forming a mixture of gas bubbles in the liquid by admixing a sufficient amount of gas containing hydrogen sulfide with the liquid to react with the liquid to form sulfur and to provide a sufficient amount of gas bubbles to separate sulfur formed from the body of the liquid by flotation. The method is particularly useful for regenerating aqueous absorbents in cyclic processes for removing sulfur dioxide from gas streams.