Patents by Inventor Mark A. Levan

Mark A. Levan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Solid state memory device, and manufacturing method thereof
    Patent number: 10707121
    Abstract: Conductive structure technology is disclosed. In one example, a conductive structure can include an interconnect and a plurality of conductive layers overlying the interconnect. Each conductive layer can be separated from an adjacent conductive layer by an insulative layer. In addition, the conductive structure can include a contact extending through the plurality of conductive layers to the interconnect. The contact can be electrically coupled to the interconnect and insulated from the plurality of conductive layers. Associated systems and methods are also disclosed.
    Type: Grant
    Filed: December 31, 2016
    Date of Patent: July 7, 2020
    Assignee: Intel Corporatino
    Inventors: Jun Liu, Mark A. Levan, Gordon A. Haller, Fei Wang, Wei Yeeng Ng, Wesley O. McKinsey, Zhiqiang Xie, Jeremy F. Adams, Hongbin Zhu, Jun Zhao
  • A Solid State Memory Device, and Manufacturing Method Thereof
    Publication number: 20180190540
    Abstract: Conductive structure technology is disclosed. In one example, a conductive structure can include an interconnect and a plurality of conductive layers overlying the interconnect. Each conductive layer can be separated from an adjacent conductive layer by an insulative layer. In addition, the conductive structure can include a contact extending through the plurality of conductive layers to the interconnect. The contact can be electrically coupled to the interconnect and insulated from the plurality of conductive layers. Associated systems and methods are also disclosed.
    Type: Application
    Filed: December 31, 2016
    Publication date: July 5, 2018
    Applicant: Intel Corporation
    Inventors: Jun Liu, Gordon A. Haller, Fei Wang, Wei Yeeng Ng, Wesley O. McKinsey, Zhiqiang Xie, Jeremy F. Adams, Hongbin Zhu, Jun Zhao, Mark A. Levan