Patents by Inventor Mark A. Passaro

Mark A. Passaro has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Metal-to-metal capacitor having thin insulator
    Patent number: 6150707
    Abstract: The present invention provides a method for fabricating a capacitor within a semiconductor device comprising the steps of forming openings in an oxide dielectric to reach a lower conductor layer which will serve as a lower conductor plate of the capacitor; depositing capacitor electrode material, such as tungsten to fill the openings to form a capacitor electrode and planarizing the filled openings using chemical/mechanical polish; depositing a selected oxide capacitor dielectric over the capacitor electrodes and patterning the capacitor dielectric with photoresist to leave dielectric covering the area of the capacitor electrodes; stripping away the photoresist; adding an upper conductor layer on top of the capacitor dielectric to serve as the top plate of the capacitor. The above steps may be repeated to form multiple layers of capacitors within the semiconductor device.
    Type: Grant
    Filed: January 7, 1999
    Date of Patent: November 21, 2000
    Assignee: International Business Machines Corporation
    Inventors: Robert K. Cook, Craig R. Gruszecki, Mark A. Passaro, Frederick A. Scholl
  • Metal to metal capacitor and method for producing same
    Patent number: 6001702
    Abstract: The present invention provides a method for fabricating a capacitor within a semiconductor device comprising the steps of forming openings in an oxide dielectric to reach a lower conductor layer which will serve as a lower conductor plate of the capacitor; depositing capacitor electrode material, such as tungsten to fill the openings to form a capacitor electrode and planarizing the filled openings using chemical/mechanical polish; depositing a selected oxide capacitor dielectric over the capacitor electrodes and patterning the capacitor dielectric with photoresist to leave dielectric covering the area of the capacitor electrodes; stripping away the photoresist; adding an upper conductor layer on top of the capacitor dielectric to serve as the top plate of the capacitor. The above steps may be repeated to form multiple layers of capacitors within the semiconductor device.
    Type: Grant
    Filed: January 28, 1998
    Date of Patent: December 14, 1999
    Assignee: International Business Machines Corporation
    Inventors: Robert K. Cook, Craig R. Gruszecki, Mark A. Passaro, Frederick A. Scholl