Patents by Inventor Mark A. Prelas
Mark A. Prelas has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10373723Abstract: The invention provides methods, devices and systems for excimer fluorescence energy conversion from isotopes. Unprocessed spent nuclear fuel can be used as an isotope, and processed spent nuclear fuel can be used as an isotope. A method includes placing an excimer in the path of radiation decay from the isotope. The excimer is selected according to the isotope to absorb the radiation decay and emit photons in response. Surrounding environment is shielded from the radiation decay. Photons generated from the fluorescence of the excimer are received with photovoltaic material to generate electrical energy. The electrical energy is applied to a load. Systems of the invention can be based upon spent storage casks and handle unprocessed spent nuclear fuel, or can be greatly reduced in size and handle processed fuel, with single isotope isolation allowing consumer battery sized systems.Type: GrantFiled: September 30, 2015Date of Patent: August 6, 2019Assignee: The Curators of the University of MissouriInventors: Robert V. Tompson, Jr., Mark A. Prelas
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Patent number: 9984781Abstract: A solid-state nuclear energy conversion system includes a crystalline insulator bombarded with radiation to create electron-hole pairs. A voltage source provides a potential bias across the crystalline insulator, causing electrons and holes to collect at opposing ends. A diode is incorporated in a circuit including the crystalline insulator, voltage source, and a load, inhibiting current flow from the voltage source to the load. Thus, a radiation-driven current flows to the load.Type: GrantFiled: July 29, 2016Date of Patent: May 29, 2018Assignee: The Curators of the University of MissouriInventor: Mark A. Prelas
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Publication number: 20170309358Abstract: A solid-state nuclear energy conversion system includes a crystalline insulator bombarded with radiation to create electron-hole pairs. A voltage source provides a potential bias across the crystalline insulator, causing electrons and holes to collect at opposing ends. A diode is incorporated in a circuit including the crystalline insulator, voltage source, and a load, inhibiting current flow from the voltage source to the load. Thus, a radiation-driven current flows to the load.Type: ApplicationFiled: July 29, 2016Publication date: October 26, 2017Inventor: Mark A. Prelas
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Patent number: 9329223Abstract: A method for detecting surface and bulk deep states in semiconductor materials is provided. In various embodiments, the method comprises configuring a detection circuit of charge based deep level transient spectrometer in one of a parallel mode and a series mode by controlling the configuration of a switching circuit of the detection circuit. The method additionally comprises generating digitized voltage charge outputs of a device under test utilizing the detection circuit as controlled via execution of an analog-to-digital conversion and timing program by a control system of the charge based deep level transient spectrometer. Furthermore, the method comprises obtaining desired information about deep level transients of the device under test based on the digitized voltage charge outputs via execution of a control system operable to execute a Q-DLTS data analysis program by the control system.Type: GrantFiled: July 2, 2012Date of Patent: May 3, 2016Assignee: The Curators of the University of MissouriInventors: Daniel E. Montenegro, Jason B. Rothenberger, Mark A. Prelas, Robert V Tompson, Jr., Annie Tipton
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Publication number: 20160093411Abstract: The invention provides methods, devices and systems for excimer fluorescence energy conversion from isotopes. Unprocessed spent nuclear fuel can be used as an isotope, and processed spent nuclear fuel can be used as an isotope. A method includes placing an excimer in the path of radiation decay from the isotope. The excimer is selected according to the isotope to absorb the radiation decay and emit photons in response. Surrounding environment is shielded from the radiation decay. Photons generated from the fluorescence of the excimer are received with photovoltaic material to generate electrical energy. The electrical energy is applied to a load. Systems of the invention can be based upon spent storage casks and handle unprocessed spent nuclear fuel, or can be greatly reduced in size and handle processed fuel, with single isotope isolation allowing consumer battery sized systems.Type: ApplicationFiled: September 30, 2015Publication date: March 31, 2016Inventors: Robert V. Tompson, JR., Mark A. Prelas
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Publication number: 20150221405Abstract: A method and apparatus for generating neutrons by inducing hydride-forming metals infused with hydrogen isotopes to undergo rapid phase transitions. Such transitions are induced by exposing the metals to rapid temperature changes. The method includes placing the metals in a high-pressure reaction chamber, introducing a hydrogen isotope gas into the chamber to produce a metal hydride, reducing the temperature of the pressure chamber to maximize infusion of gas into metal, then quickly heating the reaction chamber, such that the temperature of the interior of the reaction chamber rapidly rises from a minimum temperature to a maximum temperature in an amount of time that is less than a thermal shock period. The temperatures and pressures are at such high levels that if two or more hydrogen isotope atoms are in the same void or defect within a crystalline lattice of the metal hydride, the atoms can react, resulting in neutron generation.Type: ApplicationFiled: August 12, 2013Publication date: August 6, 2015Applicant: The Curators of the University of MissouriInventor: Mark Prelas
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Patent number: 8552616Abstract: A micro-scale power source and method includes a semiconductor structure having an n-type semiconductor region, a p-type semiconductor region and a p-n junction. A radioisotope provides energy to the p-n junction resulting in electron-hole pairs being formed in the n-type semiconductor region and p-type semiconductor region, which causes electrical current to pass through p-n junction and produce electrical power.Type: GrantFiled: October 25, 2006Date of Patent: October 8, 2013Assignee: The Curators of the University of MissouriInventor: Mark A. Prelas
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Patent number: 8394711Abstract: Various embodiments of the present disclosure provide a method of simultaneously co-doping a wide band gap material with p-type and n-type impurities to create a p-n junction within the resulting wide band gap composite material. The method includes disposing a sample comprising a dopant including both p-type and n-type impurities between a pair of wide band gap material films and disposing the sample between a pair of opposing electrodes; and subjecting the sample to a preselected vacuum; and heating the sample to a preselected temperature; and applying a preselected voltage across the sample; and subjecting the sample to at least one laser beam having a preselected intensity and a preselected wavelength, such that the p-type and n-type impurities of the dopant substantially simultaneously diffuse into the wide band gap material films resulting in a wide band gap compound material comprising a p-n junction.Type: GrantFiled: June 6, 2011Date of Patent: March 12, 2013Assignee: The Curators of the University of MissouriInventors: Mark A. Prelas, Tushar K. Ghos, Robert V. Tompson, Jr., Dabir S. Viswanath, Sudarshan Loyalka
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Publication number: 20130054177Abstract: A method for detecting surface and bulk deep states in semiconductor materials is provided. In various embodiments, the method comprises configuring a detection circuit of charge based deep level transient spectrometer in one of a parallel mode and a series mode by controlling the configuration of a switching circuit of the detection circuit. The method additionally comprises generating digitized voltage charge outputs of a device under test utilizing the detection circuit as controlled via execution of an analog-to-digital conversion and timing program by a control system of the charge based deep level transient spectrometer. Furthermore, the method comprises obtaining desired information about deep level transients of the device under test based on the digitized voltage charge outputs via execution of a control system operable to execute a Q-DLTS data analysis program by the control system.Type: ApplicationFiled: July 2, 2012Publication date: February 28, 2013Applicant: THE CURATORS OF THE UNIVERSITY OF MISSOURIInventors: Daniel E. Montenegro, Jason B. Rothenberger, Mark A. Prelas, Robert V. Tompson, JR., Annie Tipton
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Publication number: 20110237057Abstract: Various embodiments of the present disclosure provide a method of simultaneously co-doping a wide band gap material with p-type and n-type impurities to create a p-n junction within the resulting wide band gap composite material. The method includes disposing a sample comprising a dopant including both p-type and n-type impurities between a pair of wide band gap material films and disposing the sample between a pair of opposing electrodes; and subjecting the sample to a preselected vacuum; and heating the sample to a preselected temperature; and applying a preselected voltage across the sample; and subjecting the sample to at least one laser beam having a preselected intensity and a preselected wavelength, such that the p-type and n-type impurities of the dopant substantially simultaneously diffuse into the wide band gap material films resulting in a wide band gap compound material comprising a p-n junction.Type: ApplicationFiled: June 6, 2011Publication date: September 29, 2011Applicant: THE CURATORS OF THE UNIVERSITY OF MISSOURIInventors: Mark A. Prelas, Tushar K. Ghos, Robert V. Tompson, JR., Dabir S. Viswanath, Sudarshan Loyalka
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Publication number: 20110199015Abstract: The present disclosure provides a new diamond composite comprising a diamond material doped with a preselected transition metal or metal compounds as an illumination source with broadband white light luminosity, high efficiency, and enhanced life span. The present disclosure also provides a new method of diffusing dopants (such as transition metal or metal compounds) into an intended material (such as a diamond material).Type: ApplicationFiled: February 12, 2010Publication date: August 18, 2011Applicant: THE CURATORS OF THE UNIVERSITY OF MISSOURIInventors: Adrian E. Mendez, Mark A. Prelas, Tushar K. Ghosh
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Patent number: 7649359Abstract: A chemical and biological agent sensor includes an electrostatic thin film supported by a substrate. The film includes an electrostatic charged surface to attract predetermined biological and chemical agents of interest. A charge collector associated with said electrostatic thin film collects charge associated with surface defects in the electrostatic film induced by the predetermined biological and chemical agents of interest. A preferred sensing system includes a charge based deep level transient spectroscopy system to read out charges from the film and match responses to data sets regarding the agents of interest. A method for sensing biological and chemical agents includes providing a thin sensing film having a predetermined electrostatic charge. The film is exposed to an environment suspected of containing the biological and chemical agents. Quantum surface effects on the film are measured.Type: GrantFiled: December 13, 2006Date of Patent: January 19, 2010Assignee: The Curators of the University of MissouriInventors: Mark A. Prelas, Tushar K. Ghosh, Robert V. Tompson, Jr., Dabir Viswanath, Sudarshan K. Loyalka
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Publication number: 20090026879Abstract: A micro-scale power source and method includes a semiconductor structure having an n-type semiconductor region, a p-type semiconductor region and a p-n junction. A radioisotope provides energy to the p-n junction resulting in electron-hole pairs being formed in the n-type semiconductor region and p-type semiconductor region, which causes electrical current to pass through p-n junction and produce electrical power.Type: ApplicationFiled: October 25, 2006Publication date: January 29, 2009Inventor: Mark A. Prelas
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Publication number: 20080007267Abstract: A chemical and biological agent sensor includes an electrostatic thin film supported by a substrate. The film includes an electrostatic charged surface to attract predetermined biological and chemical agents of interest. A charge collector associated with said electrostatic thin film collects charge associated with surface defects in the electrostatic film induced by the predetermined biological and chemical agents of interest. A preferred sensing system includes a charge based deep level transient spectroscopy system to read out charges from the film and match responses to data sets regarding the agents of interest. A method for sensing biological and chemical agents includes providing a thin sensing film having a predetermined electrostatic charge. The film is exposed to an environment suspected of containing the biological and chemical agents. Quantum surface effects on the film are measured.Type: ApplicationFiled: December 13, 2006Publication date: January 10, 2008Inventors: Mark Prelas, Tushar Ghosh, Robert Tompson, Dabir Viswanath, Sudarshan Loyalka
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Patent number: 6527854Abstract: A low free energy method for more rapidly diffusing an impurity as exemplified by boron, into a natural or synthetic diamond or other crystalline element in powdered or granular form, without degradation of the crystalline structure. The present method includes the steps of providing a mixture of the diamond or other crystalline element and the impurity in a solid phase; treating the mixture to bring the impurity into conforming contact with the outer surface of the crystalline element; and heating the mixture to a temperature between about 200° C. and about 2000° C. As an example, a diamond is disclosed having boron as an impurity diffused into the crystalline structure thereof by the present method, at a ratio of from about 0.1 part of the impurity per 1 million parts of the diamond to about 600 parts of the impurity per 1 million parts of the diamond.Type: GrantFiled: December 14, 2000Date of Patent: March 4, 2003Inventors: Mark A. Prelas, Fariborz Golshani, Robert V. Tompson, Jr.
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Patent number: 5659567Abstract: A solid-state lasers and method of operating the laser is described having a microwave-driven (MWD) visible excimer fluorescence source for exciting a solid-state laser. The laser of this invention provides an efficient, compact, and tunable solid-state laser preferably for use with tunable vibronic laser crystals. Further described is an excimer lamp that has the capability of provided illumination at varying wavelengths. In one embodiment an excimer is selected in a desire to maximize light absorption in plants. This is accomplished by tuning the lamp to provide an output compatible with plant chlorophyll.Type: GrantFiled: August 18, 1993Date of Patent: August 19, 1997Inventors: Rosemary Szewjkowski Roberts, David James Mencin, Mark A. Prelas
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Patent number: 5597762Abstract: A method of making a semiconductor material using a modified forced diffusion method includes the steps of placing the semiconductor material on a substrate in a vacuum vessel, locating an impurity atop the semiconductor material, creating a high voltage potential across the semiconductor material, heating the semiconductor material and bombarding the semiconductor material with photons under the effects of the high voltage and heat previously created. The process is particularly applicable to creating N-type diamond semiconductor material.Type: GrantFiled: September 27, 1994Date of Patent: January 28, 1997Assignee: Nonophase Diamond Technologies, Inc.Inventors: Galina Popovici, Mark A. Prelas, T. Sung, S. Khasawinah
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Patent number: 5239551Abstract: A solid-state laser and method of operating the laser is described having a microwave driven (MWD) visible excimer fluorescence source for exciting a solid-state laser. The laser of this invention provides an efficient, compact, and tunable solid-state laser preferably for use with tunable vibronic laser crystals.Type: GrantFiled: February 19, 1992Date of Patent: August 24, 1993Inventors: Rosemary S. Roberts, David J. Mencin, Mark A. Prelas
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Patent number: 5114661Abstract: An apparatus is provided for driving a solid state laser by a nuclear powered fluorescence source which is located remote from the fluorescence source. A nuclear reaction produced in a reaction chamber generates fluorescence or photons. The photons are collected from the chamber into a waveguide, such as a fiber optic waveguide. The waveguide transports the photons to the remote laser for exciting the laser.Type: GrantFiled: January 16, 1991Date of Patent: May 19, 1992Assignee: The United States of America as represented by the United States Department of EnergyInventor: Mark A. Prelas