Patents by Inventor Mark A. Prelas

Mark A. Prelas has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10373723
    Abstract: The invention provides methods, devices and systems for excimer fluorescence energy conversion from isotopes. Unprocessed spent nuclear fuel can be used as an isotope, and processed spent nuclear fuel can be used as an isotope. A method includes placing an excimer in the path of radiation decay from the isotope. The excimer is selected according to the isotope to absorb the radiation decay and emit photons in response. Surrounding environment is shielded from the radiation decay. Photons generated from the fluorescence of the excimer are received with photovoltaic material to generate electrical energy. The electrical energy is applied to a load. Systems of the invention can be based upon spent storage casks and handle unprocessed spent nuclear fuel, or can be greatly reduced in size and handle processed fuel, with single isotope isolation allowing consumer battery sized systems.
    Type: Grant
    Filed: September 30, 2015
    Date of Patent: August 6, 2019
    Assignee: The Curators of the University of Missouri
    Inventors: Robert V. Tompson, Jr., Mark A. Prelas
  • Patent number: 9984781
    Abstract: A solid-state nuclear energy conversion system includes a crystalline insulator bombarded with radiation to create electron-hole pairs. A voltage source provides a potential bias across the crystalline insulator, causing electrons and holes to collect at opposing ends. A diode is incorporated in a circuit including the crystalline insulator, voltage source, and a load, inhibiting current flow from the voltage source to the load. Thus, a radiation-driven current flows to the load.
    Type: Grant
    Filed: July 29, 2016
    Date of Patent: May 29, 2018
    Assignee: The Curators of the University of Missouri
    Inventor: Mark A. Prelas
  • Publication number: 20170309358
    Abstract: A solid-state nuclear energy conversion system includes a crystalline insulator bombarded with radiation to create electron-hole pairs. A voltage source provides a potential bias across the crystalline insulator, causing electrons and holes to collect at opposing ends. A diode is incorporated in a circuit including the crystalline insulator, voltage source, and a load, inhibiting current flow from the voltage source to the load. Thus, a radiation-driven current flows to the load.
    Type: Application
    Filed: July 29, 2016
    Publication date: October 26, 2017
    Inventor: Mark A. Prelas
  • Patent number: 9329223
    Abstract: A method for detecting surface and bulk deep states in semiconductor materials is provided. In various embodiments, the method comprises configuring a detection circuit of charge based deep level transient spectrometer in one of a parallel mode and a series mode by controlling the configuration of a switching circuit of the detection circuit. The method additionally comprises generating digitized voltage charge outputs of a device under test utilizing the detection circuit as controlled via execution of an analog-to-digital conversion and timing program by a control system of the charge based deep level transient spectrometer. Furthermore, the method comprises obtaining desired information about deep level transients of the device under test based on the digitized voltage charge outputs via execution of a control system operable to execute a Q-DLTS data analysis program by the control system.
    Type: Grant
    Filed: July 2, 2012
    Date of Patent: May 3, 2016
    Assignee: The Curators of the University of Missouri
    Inventors: Daniel E. Montenegro, Jason B. Rothenberger, Mark A. Prelas, Robert V Tompson, Jr., Annie Tipton
  • Publication number: 20160093411
    Abstract: The invention provides methods, devices and systems for excimer fluorescence energy conversion from isotopes. Unprocessed spent nuclear fuel can be used as an isotope, and processed spent nuclear fuel can be used as an isotope. A method includes placing an excimer in the path of radiation decay from the isotope. The excimer is selected according to the isotope to absorb the radiation decay and emit photons in response. Surrounding environment is shielded from the radiation decay. Photons generated from the fluorescence of the excimer are received with photovoltaic material to generate electrical energy. The electrical energy is applied to a load. Systems of the invention can be based upon spent storage casks and handle unprocessed spent nuclear fuel, or can be greatly reduced in size and handle processed fuel, with single isotope isolation allowing consumer battery sized systems.
    Type: Application
    Filed: September 30, 2015
    Publication date: March 31, 2016
    Inventors: Robert V. Tompson, JR., Mark A. Prelas
  • Publication number: 20150221405
    Abstract: A method and apparatus for generating neutrons by inducing hydride-forming metals infused with hydrogen isotopes to undergo rapid phase transitions. Such transitions are induced by exposing the metals to rapid temperature changes. The method includes placing the metals in a high-pressure reaction chamber, introducing a hydrogen isotope gas into the chamber to produce a metal hydride, reducing the temperature of the pressure chamber to maximize infusion of gas into metal, then quickly heating the reaction chamber, such that the temperature of the interior of the reaction chamber rapidly rises from a minimum temperature to a maximum temperature in an amount of time that is less than a thermal shock period. The temperatures and pressures are at such high levels that if two or more hydrogen isotope atoms are in the same void or defect within a crystalline lattice of the metal hydride, the atoms can react, resulting in neutron generation.
    Type: Application
    Filed: August 12, 2013
    Publication date: August 6, 2015
    Applicant: The Curators of the University of Missouri
    Inventor: Mark Prelas
  • Patent number: 8552616
    Abstract: A micro-scale power source and method includes a semiconductor structure having an n-type semiconductor region, a p-type semiconductor region and a p-n junction. A radioisotope provides energy to the p-n junction resulting in electron-hole pairs being formed in the n-type semiconductor region and p-type semiconductor region, which causes electrical current to pass through p-n junction and produce electrical power.
    Type: Grant
    Filed: October 25, 2006
    Date of Patent: October 8, 2013
    Assignee: The Curators of the University of Missouri
    Inventor: Mark A. Prelas
  • Patent number: 8394711
    Abstract: Various embodiments of the present disclosure provide a method of simultaneously co-doping a wide band gap material with p-type and n-type impurities to create a p-n junction within the resulting wide band gap composite material. The method includes disposing a sample comprising a dopant including both p-type and n-type impurities between a pair of wide band gap material films and disposing the sample between a pair of opposing electrodes; and subjecting the sample to a preselected vacuum; and heating the sample to a preselected temperature; and applying a preselected voltage across the sample; and subjecting the sample to at least one laser beam having a preselected intensity and a preselected wavelength, such that the p-type and n-type impurities of the dopant substantially simultaneously diffuse into the wide band gap material films resulting in a wide band gap compound material comprising a p-n junction.
    Type: Grant
    Filed: June 6, 2011
    Date of Patent: March 12, 2013
    Assignee: The Curators of the University of Missouri
    Inventors: Mark A. Prelas, Tushar K. Ghos, Robert V. Tompson, Jr., Dabir S. Viswanath, Sudarshan Loyalka
  • Publication number: 20130054177
    Abstract: A method for detecting surface and bulk deep states in semiconductor materials is provided. In various embodiments, the method comprises configuring a detection circuit of charge based deep level transient spectrometer in one of a parallel mode and a series mode by controlling the configuration of a switching circuit of the detection circuit. The method additionally comprises generating digitized voltage charge outputs of a device under test utilizing the detection circuit as controlled via execution of an analog-to-digital conversion and timing program by a control system of the charge based deep level transient spectrometer. Furthermore, the method comprises obtaining desired information about deep level transients of the device under test based on the digitized voltage charge outputs via execution of a control system operable to execute a Q-DLTS data analysis program by the control system.
    Type: Application
    Filed: July 2, 2012
    Publication date: February 28, 2013
    Applicant: THE CURATORS OF THE UNIVERSITY OF MISSOURI
    Inventors: Daniel E. Montenegro, Jason B. Rothenberger, Mark A. Prelas, Robert V. Tompson, JR., Annie Tipton
  • Publication number: 20110237057
    Abstract: Various embodiments of the present disclosure provide a method of simultaneously co-doping a wide band gap material with p-type and n-type impurities to create a p-n junction within the resulting wide band gap composite material. The method includes disposing a sample comprising a dopant including both p-type and n-type impurities between a pair of wide band gap material films and disposing the sample between a pair of opposing electrodes; and subjecting the sample to a preselected vacuum; and heating the sample to a preselected temperature; and applying a preselected voltage across the sample; and subjecting the sample to at least one laser beam having a preselected intensity and a preselected wavelength, such that the p-type and n-type impurities of the dopant substantially simultaneously diffuse into the wide band gap material films resulting in a wide band gap compound material comprising a p-n junction.
    Type: Application
    Filed: June 6, 2011
    Publication date: September 29, 2011
    Applicant: THE CURATORS OF THE UNIVERSITY OF MISSOURI
    Inventors: Mark A. Prelas, Tushar K. Ghos, Robert V. Tompson, JR., Dabir S. Viswanath, Sudarshan Loyalka
  • Publication number: 20110199015
    Abstract: The present disclosure provides a new diamond composite comprising a diamond material doped with a preselected transition metal or metal compounds as an illumination source with broadband white light luminosity, high efficiency, and enhanced life span. The present disclosure also provides a new method of diffusing dopants (such as transition metal or metal compounds) into an intended material (such as a diamond material).
    Type: Application
    Filed: February 12, 2010
    Publication date: August 18, 2011
    Applicant: THE CURATORS OF THE UNIVERSITY OF MISSOURI
    Inventors: Adrian E. Mendez, Mark A. Prelas, Tushar K. Ghosh
  • Patent number: 7649359
    Abstract: A chemical and biological agent sensor includes an electrostatic thin film supported by a substrate. The film includes an electrostatic charged surface to attract predetermined biological and chemical agents of interest. A charge collector associated with said electrostatic thin film collects charge associated with surface defects in the electrostatic film induced by the predetermined biological and chemical agents of interest. A preferred sensing system includes a charge based deep level transient spectroscopy system to read out charges from the film and match responses to data sets regarding the agents of interest. A method for sensing biological and chemical agents includes providing a thin sensing film having a predetermined electrostatic charge. The film is exposed to an environment suspected of containing the biological and chemical agents. Quantum surface effects on the film are measured.
    Type: Grant
    Filed: December 13, 2006
    Date of Patent: January 19, 2010
    Assignee: The Curators of the University of Missouri
    Inventors: Mark A. Prelas, Tushar K. Ghosh, Robert V. Tompson, Jr., Dabir Viswanath, Sudarshan K. Loyalka
  • Publication number: 20090026879
    Abstract: A micro-scale power source and method includes a semiconductor structure having an n-type semiconductor region, a p-type semiconductor region and a p-n junction. A radioisotope provides energy to the p-n junction resulting in electron-hole pairs being formed in the n-type semiconductor region and p-type semiconductor region, which causes electrical current to pass through p-n junction and produce electrical power.
    Type: Application
    Filed: October 25, 2006
    Publication date: January 29, 2009
    Inventor: Mark A. Prelas
  • Publication number: 20080007267
    Abstract: A chemical and biological agent sensor includes an electrostatic thin film supported by a substrate. The film includes an electrostatic charged surface to attract predetermined biological and chemical agents of interest. A charge collector associated with said electrostatic thin film collects charge associated with surface defects in the electrostatic film induced by the predetermined biological and chemical agents of interest. A preferred sensing system includes a charge based deep level transient spectroscopy system to read out charges from the film and match responses to data sets regarding the agents of interest. A method for sensing biological and chemical agents includes providing a thin sensing film having a predetermined electrostatic charge. The film is exposed to an environment suspected of containing the biological and chemical agents. Quantum surface effects on the film are measured.
    Type: Application
    Filed: December 13, 2006
    Publication date: January 10, 2008
    Inventors: Mark Prelas, Tushar Ghosh, Robert Tompson, Dabir Viswanath, Sudarshan Loyalka
  • Patent number: 6527854
    Abstract: A low free energy method for more rapidly diffusing an impurity as exemplified by boron, into a natural or synthetic diamond or other crystalline element in powdered or granular form, without degradation of the crystalline structure. The present method includes the steps of providing a mixture of the diamond or other crystalline element and the impurity in a solid phase; treating the mixture to bring the impurity into conforming contact with the outer surface of the crystalline element; and heating the mixture to a temperature between about 200° C. and about 2000° C. As an example, a diamond is disclosed having boron as an impurity diffused into the crystalline structure thereof by the present method, at a ratio of from about 0.1 part of the impurity per 1 million parts of the diamond to about 600 parts of the impurity per 1 million parts of the diamond.
    Type: Grant
    Filed: December 14, 2000
    Date of Patent: March 4, 2003
    Inventors: Mark A. Prelas, Fariborz Golshani, Robert V. Tompson, Jr.
  • Patent number: 5659567
    Abstract: A solid-state lasers and method of operating the laser is described having a microwave-driven (MWD) visible excimer fluorescence source for exciting a solid-state laser. The laser of this invention provides an efficient, compact, and tunable solid-state laser preferably for use with tunable vibronic laser crystals. Further described is an excimer lamp that has the capability of provided illumination at varying wavelengths. In one embodiment an excimer is selected in a desire to maximize light absorption in plants. This is accomplished by tuning the lamp to provide an output compatible with plant chlorophyll.
    Type: Grant
    Filed: August 18, 1993
    Date of Patent: August 19, 1997
    Inventors: Rosemary Szewjkowski Roberts, David James Mencin, Mark A. Prelas
  • Patent number: 5597762
    Abstract: A method of making a semiconductor material using a modified forced diffusion method includes the steps of placing the semiconductor material on a substrate in a vacuum vessel, locating an impurity atop the semiconductor material, creating a high voltage potential across the semiconductor material, heating the semiconductor material and bombarding the semiconductor material with photons under the effects of the high voltage and heat previously created. The process is particularly applicable to creating N-type diamond semiconductor material.
    Type: Grant
    Filed: September 27, 1994
    Date of Patent: January 28, 1997
    Assignee: Nonophase Diamond Technologies, Inc.
    Inventors: Galina Popovici, Mark A. Prelas, T. Sung, S. Khasawinah
  • Patent number: 5239551
    Abstract: A solid-state laser and method of operating the laser is described having a microwave driven (MWD) visible excimer fluorescence source for exciting a solid-state laser. The laser of this invention provides an efficient, compact, and tunable solid-state laser preferably for use with tunable vibronic laser crystals.
    Type: Grant
    Filed: February 19, 1992
    Date of Patent: August 24, 1993
    Inventors: Rosemary S. Roberts, David J. Mencin, Mark A. Prelas
  • Patent number: 5114661
    Abstract: An apparatus is provided for driving a solid state laser by a nuclear powered fluorescence source which is located remote from the fluorescence source. A nuclear reaction produced in a reaction chamber generates fluorescence or photons. The photons are collected from the chamber into a waveguide, such as a fiber optic waveguide. The waveguide transports the photons to the remote laser for exciting the laser.
    Type: Grant
    Filed: January 16, 1991
    Date of Patent: May 19, 1992
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventor: Mark A. Prelas