Abstract: A device for cooling the central nervous system (e.g., the brain) is disclosed that is specifically designed to provide cooling of an injured central nervous system for neuroprotective, antiepileptogenic, and/or antiepileptic treatments. In one embodiment, a portion of the cooling device is placed in a recess formed by removal of a portion of a patient's skull. An embedded heat-collecting portion of the cooling device is formed to fit in the location of the formed recess and a thermally conductive material of the heat-collecting portion is placed adjacent the dura mater to provide the desired degree of cooling. A heat-dissipating external plate is in thermal contact with the internal plate, and can be selectively sized according to a specific purpose.

Abstract: A device for cooling the central nervous system (e.g., the brain) is disclosed that is specifically designed to provide cooling of an injured central nervous system for neuroprotective, antiepileptogenic, and/or antiepileptic treatments. In one embodiment, a portion of the cooling device is placed in a recess formed by removal of a portion of a patient's skull. An embedded heat-collecting portion of the cooling device is formed to fit in the location of the formed recess and a thermally conductive material of the heat-collecting portion is placed adjacent the dura mater to provide the desired degree of cooling. A heat-dissipating external plate is in thermal contact with the internal plate, and can be selectively sized according to a specific purpose.

Abstract: A photoresist mask is provided, having a central region fabricated on an underlying layer. An overhang supported by the central region is separated from the underlying layer by a recessed area. The recessed area has an aspect ratio of at least about 1.5. The mask may be advantageously used to pattern electrodes deposited through the mask by chemical vapor deposition or sputtering, such that there is no significant conductivity across the mask between the patterned electrodes.

Abstract: An organic optoelectronic device structure is provided. The organic optoelectronic device structure comprises: (a) a polymer substrate layer; (a) a first barrier region disposed over a first face of the polymer substrate layer; (c) an organic optoelectronic device disposed over a second face of the polymer substrate layer opposite the first face; (d) a second barrier region disposed over the second face of the polymer substrate layer and over the organic optoelectronic device; and (e) an adhesive region. The adhesive region is disposed between the polymer substrate layer and the second barrier region such that it bonds the polymer substrate layer to the second barrier region. Moreover, the adhesive region encircles the organic optoelectronic device such that the organic optoelectronic device is completely surrounded by the adhesive region, the polymer substrate layer and second barrier region.

Abstract: A photoresist mask is provided, having a central region fabricated on an underlying layer. An overhang supported by the central region is separated from the underlying layer by a recessed area. The recessed area has an aspect ratio of at least about 1.5. The mask may be advantageously used to pattern electrodes deposited through the mask by chemical vapor deposition or sputtering, such that there is no significant conductivity across the mask between the patterned electrodes.

Abstract: An organic optoelectronic device structure is provided. The organic optoelectronic device structure comprises: (a) a polymer substrate layer; (a) a first barrier region disposed over a first face of the polymer substrate layer; (c) an organic optoelectronic device disposed over a second face of the polymer substrate layer opposite the first face; (d) a second barrier region disposed over the second face of the polymer substrate layer and over the organic optoelectronic device; and (e) an adhesive region. The adhesive region is disposed between the polymer substrate layer and the second barrier region such that it bonds the polymer substrate layer to the second barrier region. Moreover, the adhesive region encircles the organic optoelectronic device such that the organic optoelectronic device is completely surrounded by the adhesive region, the polymer substrate layer and second barrier region.

Abstract: A heterostructure device includes a ridge-waveguide laser monolithically integrated with a ridge-waveguide rear facet monitor (RFM). An integral V-groove etched directly into the device substrate enables passive alignment of an optical fiber to the active region of the laser. The laser and RFM facets were formed using an in-situ multistep reactive ion etch process.

Abstract: A method of passively aligning optical receiving elements such as fibers to the active elements of a light generating chip includes the steps of forming two front and one side pedestal structures on the surface of a substrate body, defining a vertical sidewall of the chip to form a mating channel having an edge at a predetermined distance from the first active element, mounting the chip epi-side down on the substrate surface, and positioned the fibers in fiber-receiving channels so that a center line of each fiber is aligned to a center line of a respective active element. When mounted, the front face of the chip is abutting the contact surfaces of the two front pedestals, and the defined sidewall of the mating channel is abutting the contact surface of the side pedestal. The passive alignment procedure is also effective in aligning a single fiber to a single active element.

Abstract: A method of passively aligning optical receiving elements such as fibers to the active elements of a light generating chip includes the steps of forming two front and one side pedestal structures on the surface of a substrate body, defining a vertical sidewall of the chip to form a mating channel having an edge at a predetermined distance from the first active element, mounting the chip epi-side down on the substrate surface, and positioning the fibers in fiber-receiving channels to that a center line of each fiber is aligned to a center line of a respective active element. When mounted, the front face of the chip is abutting the contact surfaces of the two front pedestals, and the defined sidewall of the mating channel is abutting the contact surface of the side pedestal. The passive alignment procedure is also effective in aligning a single fiber to a single active element.