Patents by Inventor Mark A. Stan

Mark A. Stan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11677037
    Abstract: A method of forming a multijunction solar cell that includes an InGaAs buffer layer and an InGaAlAs grading interlayer disposed below, and adjacent to, the InGaAs buffer layer. The grading interlayer achieves a transition in lattice constant from one solar subcell to another adjacent solar subcell.
    Type: Grant
    Filed: February 5, 2021
    Date of Patent: June 13, 2023
    Assignee: SolAero Technologies Corp.
    Inventors: Arthur Cornfeld, Mark A. Stan
  • Patent number: 11211509
    Abstract: A multijunction solar cell includes an InGaAs buffer layer and an InGaAlAs grading interlayer disposed below, and adjacent to, the InGaAs buffer layer. The grading interlayer achieves a transition in lattice constant from one solar subcell to another solar subcell.
    Type: Grant
    Filed: November 19, 2019
    Date of Patent: December 28, 2021
    Assignee: SolAero Technologies Corp.
    Inventors: Arthur Cornfeld, Mark A. Stan
  • Patent number: 11063168
    Abstract: An inverted metamorphic multijunction solar cell comprising: an upper first solar subcell having a first band gap; a middle second solar subcell disposed adjacent to the upper first solar subcell and having a second band gap smaller than said first band gap; a graded interlayer disposed adjacent to the middle second solar subcell and having a band gap that remains constant throughout its thickness; a lower third solar subcell disposed adjacent to said graded interlayer and having a fourth band gap that is smaller than said second band gap such that said third solar subcell is lattice mismatched with respect to said second solar subcell; a back surface field (BSF) layer disposed directly adjacent to the base layer of said lower third solar subcell; at least one distributed Bragg reflector (DBR) layer disposed directly adjacent to the back surface field (BSF) layer.
    Type: Grant
    Filed: October 29, 2019
    Date of Patent: July 13, 2021
    Assignee: SolAero Technologies Corp.
    Inventors: Mark A. Stan, Arthur Cornfeld
  • Publication number: 20210193858
    Abstract: A method of forming a multijunction solar cell that includes an InGaAs buffer layer and an InGaAlAs grading interlayer disposed below, and adjacent to, the InGaAs buffer layer. The grading interlayer achieves a transition in lattice constant from one solar subcell to another adjacent solar subcell.
    Type: Application
    Filed: February 5, 2021
    Publication date: June 24, 2021
    Applicant: SolAero Technologies Corp.
    Inventors: Arthur Cornfeld, Mark A. Stan
  • Publication number: 20200091364
    Abstract: A method of forming a multijunction solar cell comprising an upper subcell, a middle subcell, and a lower subcell comprising providing first substrate for the epitaxial growth of semiconductor material; forming a first solar subcell on said substrate having a first band gap; forming a second solar subcell over said first subcell having a second band gap smaller than said first band gap; and forming a grading interlayer over said second sub cell having a third band gap larger than said second band gap forming a third solar subcell having a fourth band gap smaller than said second band gap such that said third subcell is lattice mis-matched with respect to said second subcell.
    Type: Application
    Filed: November 19, 2019
    Publication date: March 19, 2020
    Applicant: SolAero Technologies Corp.
    Inventors: Arthur Cornfeld, Mark A. Stan
  • Patent number: 10553740
    Abstract: A multijunction solar cell includes an InGaAs buffer layer and an InGaAlAs grading interlayer disposed below, and adjacent to, the InGaAs buffer layer. The grading interlayer achieves a transition in lattice constant from one solar subcell to another solar subcell.
    Type: Grant
    Filed: April 27, 2018
    Date of Patent: February 4, 2020
    Assignee: SolAero Technologies Corp.
    Inventors: Arthur Cornfeld, Mark A. Stan
  • Patent number: 10541349
    Abstract: A method of manufacturing an inverted metamorphic multijunction solar cell is disclosed herein. The method includes forming a lattice constant transition material positioned between a first subcell and a second subcell using a metal organic chemical vapor deposition (MOCVD) reactor. The solar cell further includes at least one distributed Bragg reflector (DBR) layer directly adjacent a back surface field (BSF) layer.
    Type: Grant
    Filed: April 29, 2013
    Date of Patent: January 21, 2020
    Assignee: SolAero Technologies Corp.
    Inventors: Mark A. Stan, Arthur Cornfeld
  • Patent number: 10381501
    Abstract: The disclosure describes multi-junction solar cell structures that include two or more graded interlayers.
    Type: Grant
    Filed: February 15, 2017
    Date of Patent: August 13, 2019
    Assignee: SolAero Technologies Corp.
    Inventors: Yong Lin, Paul R. Sharps, Arthur Cornfeld, Pravin Patel, Mark A. Stan, Benjamin Cho
  • Patent number: 10381505
    Abstract: A multijunction solar cell includes an upper first solar subcell having a first band gap, a second solar subcell having a second band gap smaller than the first band gap, and a first graded interlayer composed of (InxGa1-x)yAl1-yAs adjacent to the second solar subcell. The first graded interlayer has a third band gap greater than the second band gap subject to the constraints of having the in-plane lattice parameter greater or equal to that of the second subcell and less than or equal to that of the third subcell, wherein 0<x<1 and 0<y<1, and x and y are selected such that the band gap of the first graded interlayer remains constant throughout its thickness at 1.5 eV. A third solar subcell is adjacent to the first graded interlayer and has a fourth band gap smaller than the second band gap such that the third subcell is lattice mismatched with respect to the second subcell.
    Type: Grant
    Filed: July 19, 2016
    Date of Patent: August 13, 2019
    Assignee: SolAero Technologies Corp.
    Inventors: Pravin Patel, Arthur Cornfeld, John Spann, Mark A. Stan, Benjamin Cho, Paul R. Sharps, Daniel J. Aiken
  • Patent number: 10374112
    Abstract: A multijunction solar cell includes an upper first solar subcell, a second solar subcell adjacent to the first solar subcell, a third solar subcell adjacent to the second solar subcell, and a graded interlayer adjacent to the third solar subcell. The graded interlayer has a band gap that is greater than the band gap of the third solar subcell and is composed of a compositionally step-graded series of (InxGa1-x)yAl1-yAs layers with monotonically changing lattice constant, with x and y having respective values such that the band gap of the graded interlayer remains constant throughout its thickness, and wherein 0<x<1 and 0<y<1. A fourth solar subcell is adjacent to the graded interlayer and is lattice mismatched with respect to the third solar subcell. The graded interlayer provides a transition in lattice constant from the third solar subcell to the fourth solar subcell. A lower fifth solar subcell is adjacent to the fourth solar subcell.
    Type: Grant
    Filed: February 17, 2016
    Date of Patent: August 6, 2019
    Assignee: SolAero Technologies Corp.
    Inventors: Arthur Cornfeld, Pravin Patel, Mark A. Stan, Benjamin Cho, Paul R. Sharps, Daniel J. Aiken, John Spann
  • Patent number: 10170656
    Abstract: The present disclosure provides a multijunction solar cell that includes: a first sequence of layers of semiconductor material forming a first set of one or more solar subcells; a graded interlayer adjacent to said first sequence of layers; a second sequence of layers of semiconductor material forming a second set of one or more solar subcells; and a high band gap contact layer adjacent said second sequence of layers, wherein the high band gap contact layer is composed of p++ type InGaAlAs or InGaAs.
    Type: Grant
    Filed: February 17, 2015
    Date of Patent: January 1, 2019
    Assignee: SolAero Technologies Corp.
    Inventors: Fred Newman, Benjamin Cho, Mark A. Stan, Paul Sharps
  • Publication number: 20180351022
    Abstract: The disclosure describes multi-junction solar cell structures that include two or more graded interlayers.
    Type: Application
    Filed: February 15, 2017
    Publication date: December 6, 2018
    Inventors: Yong Lin, Paul R. Sharps, Arthur Cornfeld, Pravin Patel, Mark A. Stan, Benjamin Cho
  • Publication number: 20180248066
    Abstract: A multijunction solar cell includes an InGaAs buffer layer and an InGaAlAs grading interlayer disposed below, and adjacent to, the InGaAs buffer layer. The grading interlayer achieves a transition in lattice constant from one solar subcell to another solar subcell.
    Type: Application
    Filed: April 27, 2018
    Publication date: August 30, 2018
    Inventors: Arthur Cornfeld, Mark A. Stan
  • Patent number: 10026860
    Abstract: A method of forming a multijunction solar cell comprising an upper subcell, a middle subcell, and a lower subcell comprising providing first substrate for the epitaxial growth of semiconductor material; forming a first solar subcell on said substrate having a first band gap; forming a second solar subcell over said first subcell having a second band gap smaller than said first band gap; and forming a grading interlayer over said second sub cell having a third band gap larger than said second band gap forming a third solar subcell having a fourth band gap smaller than said second band gap such that said third subcell is lattice mis-matched with respect to said second subcell.
    Type: Grant
    Filed: July 31, 2013
    Date of Patent: July 17, 2018
    Assignee: SolAero Technologies Corp.
    Inventors: Arthur Cornfeld, Mark A. Stan
  • Publication number: 20180102454
    Abstract: The disclosure describes multi-junction solar cell structures that include two or more graded interlayers.
    Type: Application
    Filed: February 15, 2017
    Publication date: April 12, 2018
    Inventors: Yong Lin, Paul R. Sharps, Arthur Cornfeld, Pravin Patel, Mark A. Stan, Benjamin Cho
  • Patent number: 9768326
    Abstract: The present disclosure provides a method of manufacturing a solar cell comprising: providing a semiconductor growth substrate; depositing on said growth substrate a sequence of layers of semiconductor material forming a solar cell; applying a metal contact layer over said sequence of layers; and affixing the surface of a permanent supporting substrate composed of a carbon fiber reinforced polymer utilizing a conductive polyimide binding resin directly over said metal contact layer and permanently bonding it thereto by a thermocompressive technique.
    Type: Grant
    Filed: November 13, 2015
    Date of Patent: September 19, 2017
    Assignee: SolAero Technologies Corp.
    Inventors: Mark A. Stan, Chelsea Mackos, Jeff Steinfeldt
  • Patent number: 9691930
    Abstract: The present disclosure provides a method of manufacturing a solar cell including: providing a first substrate and a second substrate; depositing on the first substrate a sequence of layers of semiconductor material forming a solar cell including a top subcell and a bottom subcell; forming a back metal contact over the bottom subcell; applying a conductive polyimide adhesive to the second substrate; attaching the second substrate on top of the back metal contact; and removing the first substrate to expose the surface of the top subcell.
    Type: Grant
    Filed: November 6, 2015
    Date of Patent: June 27, 2017
    Assignee: SolAero Technologies Corp.
    Inventors: Mark A. Stan, Chelsea Mackos, Jeff Steinfeldt
  • Patent number: 9691928
    Abstract: A method of forming a multijunction solar cell comprising at least an upper subcell, a middle subcell, and a lower subcell, the method including forming a first alpha layer over said middle solar subcell using a surfactant and dopant including selenium, the first alpha layer configured to prevent threading dislocations from propagating; forming a metamorphic grading interlayer over and directly adjacent to said first alpha layer; forming a second alpha layer using a surfactant and dopant including selenium over and directly adjacent to said grading interlayer to prevent threading dislocations from propagating; and forming a lower solar subcell over said grading interlayer such that said lower solar subcell is lattice mismatched with respect to said middle solar subcell.
    Type: Grant
    Filed: October 2, 2013
    Date of Patent: June 27, 2017
    Assignee: SolAreo Technologies Corp.
    Inventors: Benjamin Cho, Yong Lin, Pravin Patel, Mark A. Stan, Arthur Cornfeld, Daniel McGlynn, Fred Newman
  • Publication number: 20170162739
    Abstract: The disclosure describes multi-junction solar cell structures that include two or more graded interlayers.
    Type: Application
    Filed: February 15, 2017
    Publication date: June 8, 2017
    Inventors: Yong Lin, Paul R. Sharps, Arthur Cornfeld, Pravin Patel, Mark A. Stan, Benjamin Cho
  • Patent number: 9634172
    Abstract: The disclosure describes multi-junction solar cell structures that include two or more graded interlayers.
    Type: Grant
    Filed: September 12, 2014
    Date of Patent: April 25, 2017
    Assignee: SolAero Technologies Corp.
    Inventors: Yong Lin, Paul Sharps, Arthur Cornfeld, Pravin Patel, Mark A. Stan, Benjamin Cho