Abstract: Systems, methods, and apparatus including conductive line contact regions having multiple multi-direction conductive lines and staircase conductive line contact structures for semiconductor devices. One memory device comprises arrays of vertically stacked memory cells, having multiple multi-direction conductive lines arrays of vertically stacked memory cells, including a vertical stack of layers formed from repeating iterations of a group of layers, the group of layers comprising: a first dielectric material layer, a semiconductor material layer, and a second dielectric material layer, the second dielectric material layer having a conductive line formed in a horizontal plane therein, and the vertical stack of layers having multiple multi-direction conductive lines in an interconnection region with a first portion of the interconnection region formed in an array region and a second portion formed in a conductive line contact region that is spaced from the array region.

Abstract: Systems, methods, and apparatus including conductive line contact regions having multiple multi-direction conductive lines and staircase conductive line contact structures for semiconductor devices. One memory device comprises arrays of vertically stacked memory cells, having multiple multi-direction conductive lines arrays of vertically stacked memory cells, including a vertical stack of layers formed from repeating iterations of a group of layers, the group of layers comprising: a first dielectric material layer, a semiconductor material layer, and a second dielectric material layer, the second dielectric material layer having a conductive line formed in a horizontal plane therein, and the vertical stack of layers having multiple multi-direction conductive lines in an interconnection region with a first portion of the interconnection region formed in an array region and a second portion formed in a conductive line contact region that is spaced from the array region.

Abstract: Systems, methods, and apparatus including multi-direction conductive lines and staircase contacts for semiconductor devices. One memory device includes an array of vertically stacked memory cells, the array including: a vertical stack of horizontally oriented conductive lines, each conductive line comprising: a first portion extending in a first horizontal direction; and a second portion extending in a second horizontal direction at an angle to the first horizontal direction.

Abstract: Systems, methods, and apparatus including multi-direction conductive lines and staircase contacts for semiconductor devices. One memory device includes an array of vertically stacked memory cells, the array including: a vertical stack of horizontally oriented conductive lines, each conductive line comprising: a first portion extending in a first horizontal direction; and a second portion extending in a second horizontal direction at an angle to the first horizontal direction.

Abstract: Systems, methods, and apparatus including conductive line contact regions having multiple multi-direction conductive lines and staircase conductive line contact structures for semiconductor devices. One memory device comprises arrays of vertically stacked memory cells, having multiple multi-direction conductive lines arrays of vertically stacked memory cells, including a vertical stack of layers formed from repeating iterations of a group of layers, the group of layers comprising: a first dielectric material layer, a semiconductor material layer, and a second dielectric material layer, the second dielectric material layer having a conductive line formed in a horizontal plane therein, and the vertical stack of layers having multiple multi-direction conductive lines in an interconnection region with a first portion of the interconnection region formed in an array region and a second portion formed in a conductive line contact region that is spaced from the array region.

Abstract: A semiconductor device comprises a memory storage component and a transistor in operable communication with the memory storage element. The transistor comprises a source region, a drain region, a gate electrode between the source region and the drain region, a charge trapping material surrounding at least an upper portion of the gate electrode, and an oxide material on sides of the charge trapping material. Related systems and methods are also disclosed.

Abstract: A semiconductor device comprises a memory storage component and a transistor in operable communication with the memory storage element. The transistor comprises a source region, a drain region, a gate electrode between the source region and the drain region, a charge trapping material surrounding at least an upper portion of the gate electrode, and an oxide material on sides of the charge trapping material. Related systems and methods are also disclosed.

Abstract: Embodiments of the present invention provide a method for cuts of sacrificial metal lines in a back end of line structure. Sacrificial Mx+1 lines are formed above metal Mx lines. A line cut lithography stack is deposited and patterned over the sacrificial Mx+1 lines and a cut cavity is formed. The cut cavity is filled with dielectric material. A selective etch process removes the sacrificial Mx+1 lines, preserving the dielectric that fills in the cut cavity. Precut metal lines are then formed by depositing metal where the sacrificial Mx+1 lines were removed. Thus embodiments of the present invention provide precut metal lines, and do not require metal cutting. By avoiding the need for metal cutting, the risks associated with metal cutting are avoided.

Abstract: Semiconductor devices and methods of fabricating the semiconductor devices with chamfer-less via multi-patterning are disclosed. One method includes, for instance: obtaining an intermediate semiconductor device; performing a trench etch into a portion of the intermediate semiconductor device to form a trench pattern; depositing an etching stack; performing at least one via patterning process; and forming at least one via opening into a portion of the intermediate semiconductor device. An intermediate semiconductor device is also disclosed.

Abstract: Embodiments of the present invention provide an improved semiconductor structure and methods of fabrication that provide transistor contacts that are self-aligned in two dimensions. Two different capping layers are used, each being comprised of a different material. The two capping layers are selectively etchable to each other. One capping layer is used for gate coverage while the other capping layer is used for source/drain coverage. Selective etch processes open the desired gates and source/drains, while block masks are used to cover elements that are not part of the connection scheme. A metallization line (layer) is deposited, making contact with the open elements to provide electrical connectivity between them.

Abstract: Semiconductor devices and methods of fabricating the semiconductor devices with chamfer-less via multi-patterning are disclosed. One method includes, for instance: obtaining an intermediate semiconductor device; performing a trench etch into a portion of the intermediate semiconductor device to form a trench pattern; depositing an etching stack; performing at least one via patterning process; and forming at least one via opening into a portion of the intermediate semiconductor device. An intermediate semiconductor device is also disclosed.

Abstract: Provided are approaches for forming a self-aligned via and an air gap within a semiconductor device. Specifically, one approach produces a device having: a first metal line beneath a second metal line within an ultra low-k (ULK) dielectric, the first metal line connected to the second metal line by a first via; a dielectric capping layer formed over the second metal line; a third metal line within first and second via openings formed within a ULK fill material formed over the dielectric capping layer, wherein the third metal line within the first via opening extends to a top surface of the dielectric capping layer, and wherein the third metal line within the second via opening is connected to the second metal by a second via passing through the dielectric capping layer; and an air gap formed between the third metal line within the first and seconds via openings.

Abstract: Embodiments of the present invention provide an improved semiconductor structure and methods of fabrication that provide transistor contacts that are self-aligned in two dimensions. Two different capping layers are used, each being comprised of a different material. The two capping layers are selectively etchable to each other. One capping layer is used for gate coverage while the other capping layer is used for source/drain coverage. Selective etch processes open the desired gates and source/drains, while block masks are used to cover elements that are not part of the connection scheme. A metallization line (layer) is deposited, making contact with the open elements to provide electrical connectivity between them.

Abstract: Embodiments of the present invention provide a method for self-aligned metal cuts in a back end of line structure. Sacrificial Mx+1 lines are formed above metal Mx lines. Spacers are formed on each Mx+1 sacrificial line. The gap between the spacers is used to determine the location and thickness of cuts to the Mx metal lines. This ensures that the Mx metal line cuts do not encroach on vias that interconnect the Mx and Mx+1 levels. It also allows for reduced limits in terms of via enclosure rules, which enables increased circuit density.

Abstract: Embodiments of the present invention provide an improved semiconductor structure and methods of fabrication that provide transistor contacts that are self-aligned in two dimensions. Two different capping layers are used, each being comprised of a different material. The two capping layers are selectively etchable to each other. One capping layer is used for gate coverage while the other capping layer is used for source/drain coverage. Selective etch processes open the desired gates and source/drains, while block masks are used to cover elements that are not part of the connection scheme. A metallization line (layer) is deposited, making contact with the open elements to provide electrical connectivity between them.

Abstract: Embodiments of the present invention provide a method for self-aligned metal cuts in a back end of line structure. Sacrificial Mx+1 lines are formed above metal Mx lines. Spacers are formed on each Mx+1 sacrificial line. The gap between the spacers is used to determine the location and thickness of cuts to the Mx metal lines. This ensures that the Mx metal line cuts do not encroach on vias that interconnect the Mx and Mx+1 levels. It also allows for reduced limits in terms of via enclosure rules, which enables increased circuit density.

Abstract: Embodiments of the present invention provide a semiconductor structure for BEOL (back end of line) integration. A directed self assembly (DSA) material is deposited and annealed to form two distinct phase regions. One of the phase regions is selectively removed, and the remaining phase region serves as a mask for forming cavities in an underlying layer of metal and/or dielectric. The process is then repeated to form complex structures with patterns of metal separated by dielectric regions.

Abstract: Embodiments of the present invention provide a method for self-aligned metal cuts in a back end of line structure. Sacrificial Mx+1 lines are formed above metal Mx lines. Spacers are formed on each Mx+1 sacrificial line. The gap between the spacers is used to determine the location and thickness of cuts to the Mx metal lines. This ensures that the Mx metal line cuts do not encroach on vias that interconnect the Mx and Mx+1 levels. It also allows for reduced limits in terms of via enclosure rules, which enables increased circuit density.

Abstract: An improved semiconductor structure and methods of fabrication that provide improved transistor contacts in a semiconductor structure are provided. A first block mask is formed over a portion of the semiconductor structure. This first block mask covers at least a portion of at least one source/drain (s/d) contact location. An s/d capping layer is formed over the s/d contact locations that are not covered by the first block mask. This s/d capping layer is comprised of a first capping substance. Then, a second block mask is formed over the semiconductor structure. This second block mask exposes at least one gate location. A gate capping layer, which comprises a second capping substance, is removed from the exposed gate location(s). Then a metal contact layer is deposited, which forms a contact to both the s/d contact location(s) and the gate contact location(s).

Abstract: Embodiments of the present invention provide improved methods of contact formation. A self aligned contact scheme with reduced lithography requirements is disclosed. This reduces the risk of shorts between source/drains and gates, while providing improved circuit density. Cavities are formed adjacent to the gates, and a fill metal is deposited in the cavities to form contact strips. A patterning mask is then used to form smaller contacts by performing a partial metal recess of the contact strips.