Abstract: A device fabrication method, according to which a tin-copper-alloy layer is formed adjacent to a copper-plated pad or pin that is used to electrically connect the device to external wiring. Advantageously, the tin-copper-alloy layer inhibits copper dissolution during a solder reflow process because that layer is substantially insoluble in liquid Sn—Ag—Cu (tin-silver-copper) solder alloys under typical solder reflow conditions and therefore shields the copper plating from direct physical contact with the liquefied solder.

Abstract: A solder bump structure and an under bump metallurgical structure. An upper surface of a semiconductor substrate comprises a first conductive pad (200) disposed thereon. A passivation layer (202) overlies the upper surface. A second conductive pad (212) is disposed in an opening (204) in the passivation layer and in contact with the first conductive pad. The under bump metallurgical structure (300) encapsulates the second conductive pad, covering an upper surface and sidewalls surfaces of the second conductive pad, protecting both the first and the second conductive pads from environmental and processing effects. According to the present invention, the conventional second passivation layer is not required. Methods for forming the various structures are also presented.

Abstract: Many electronic entities such as integrated circuits and discrete power devices have contact pads formed from successively deposited layers of nickel and a second metal such as gold. The resulting pad structure is used to make external electrical connection such as solder connection. Problems associated with failure of such connections are avoidable by inspecting the surface of the nickel layer for excessive small particle formation.

Abstract: Assemblies involving integrated circuit dies (e.g. packaged integrated circuits) and packaged dies electrically connected to circuit boards at times mechanically fail at conducting pads used for electrical interconnection. Such failure is mitigated by underlying appropriate pads with a compliant region having specific characteristics.

Abstract: Many electronic entities such as integrated circuits and discrete power devices have contact pads formed from successively deposited layers of nickel and a second metal such as gold. The resulting pad structure is used to make external electrical connection such as solder connection. Problems associated with failure of such connections are avoidable by inspecting the surface of the nickel layer for excessive small particle formation.

Abstract: Assemblies involving integrated circuit dies (e.g. packaged integrated circuits) and packaged dies electrically connected to circuit boards at times mechanically fail at conducting pads used for electrical interconnection. Such failure is mitigated by underlying appropriate pads with a compliant region having specific characteristics.

Abstract: A solder bump structure and an under bump metallurgical structure. An upper surface of a semiconductor substrate comprises a first conductive pad (200) disposed thereon. A passivation layer (202) overlies the upper surface. A second conductive pad (212) is disposed in an opening (204) in the passivation layer and in contact with the first conductive pad. The under bump metallurgical structure (300) encapsulates the second conductive pad, covering an upper surface and sidewalls surfaces of the second conductive pad, protecting both the first and the second conductive pads from environmental and processing effects. According to the present invention, the conventional second passivation layer is not required. Methods for forming the various structures are also presented.

Abstract: An assembly comprises a stiffener, a circuit substrate and an integrated circuit (IC) chip. The stiffener has a surface with a first region and a second region. The circuit substrate covers the first region, while the IC chip overlies at least a portion of each of the first and second regions. Moreover, the assembly further comprises a plurality of first solder bumps and a plurality of second solder bumps. The first solder bumps contact both the IC chip and the circuit substrate. The second solder bumps are larger than the first solder bumps, contact the IC chip and are disposed above the second region of the stiffener.

Abstract: An integrated circuit structure and a method for fabricating the structure. The method comprises forming a copper bond pad for attaching the integrated circuit to a package. Copper oxide is removed from the pad by reduction in a hydrogen ion atmosphere. For attaching the integrated circuit to a bump-bonding package an under-bump metallization layer is formed over the reduced copper pad and a solder bump formed thereover. The process can also be employed in a wire bonding process by forming an aluminum layer overlying the cleaned copper pad. The structure of the present invention comprises a copper pad formed in a substrate. A passivation layer defining an opening therein overlies the copper pad. A under-bump metallization layer is disposed in the opening and a solder bump overlies the metallization layer. Alternatively, the structure further comprises an aluminum pad disposed overlying the reduced copper pad.

Abstract: An interface assembly (20) and method for testing a semiconductor wafer prior to performing a flip chip bumping process are provided. The interface assembly includes a flip chip bonding pad (24) having a region (28) for performing the bumping process. A test pad (22) is integrally constructed with the bonding pad and includes a probe region (26) for performing wafer-level testing prior to performing the bumping process. The integral construction of the bonding and testing pads avoids, for example, an introduction of propagation delays to test signals passing therethrough, thereby improving the accuracy and reliability of wafer test results.

Abstract: Disclosed herein is a reinforcing system and method for reinforcing a contact pad of an integrated circuit. Specifically exemplified is a system and method that comprises a reinforcing structure interposed between a top contact pad layer and an underlying metal layer.

Abstract: An integrated circuit structure and a method for fabricating the structure. The method comprises forming a copper bond pad for attaching the integrated circuit to a package. Copper oxide is removed from the pad by reduction in a hydrogen ion atmosphere. For attaching the integrated circuit to a bump-bonding package an under-bump metallization layer is formed over the reduced copper pad and a solder bump formed thereover. The process can also be employed in a wire bonding process by forming an aluminum layer overlying the cleaned copper pad. The structure of the present invention comprises a copper pad formed in a substrate. A passivation layer defining an opening therein overlies the copper pad. A under-bump metallization layer is disposed in the opening and a solder bump overlies the metallization layer. Alternatively, the structure further comprises an aluminum pad disposed overlying the reduced copper pad.