Abstract: The invention provides a system and device for integrating and structuring the relationships of a financial services provider (FSP) with its clients and with third parties (counterparties) with which the FSP transacts business. Preferably, each entity with which the FSP transacts business, preferably also including entities internal to the FSP, is assigned a unique, non-intelligent identifier (CCID), and a relationship is established between each identifier and at least on other entity likewise identified. The system allows the FSP's users to seamlessly access information and transact business with all entities regardless of whether such entities are clients or third party providers (such as money managers). The system can be implemented on a network system.

Abstract: The CO-concentration in the H.sub.2 feed stream to a PEM fuel cell stack is monitored by measuring current and voltage behavior patterns from an auxiliary cell attached to the end of the stack. The auxiliary cell is connected to the same oxygen and hydrogen feed manifolds that supply the stack, and discharges through a constant load. Pattern recognition software compares the current and voltage patterns from the auxiliary cell to current and voltage signature determined from a reference cell similar to the auxiliary cell and operated under controlled conditions over a wide range of CO-concentrations in the H.sub.2 fuel stream.

Abstract: An apparatus and system for wet/dry and other processing of manufactured articles. Belts mounted on pulleys provide support while minimally contacting article surfaces for maximum exposure to chemical, radiation, or other wet/dry processing treatments.

Abstract: A thin film hydrogen sensor, includes: a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end.

Abstract: Method and apparatus for monitoring the performance of H.sub.2 --O.sub.2 PEM fuel cells. Outputs from a cell/stack voltage monitor and a cathode exhaust gas H.sub.2 sensor are corrected for stack operating conditions, and then compared to predetermined levels of acceptability. If certain unacceptable conditions coexist, an operator is alerted and/or corrective measures are automatically undertaken.

Abstract: A teat includes a hollow body made of a resilient material. The body has an inlet end and an outlet end. The outlet end includes at least one slit through the wall of the body. The slit(s) do not extend into that area of the wall of the body which forms the extremity of the outlet end. Engaged with the inlet end is a valve when, in use of the teat, the teat is full of liquid the valve prevents liquid from flowing back through the inlet end upon a squeezing action being applied to the teat.

Abstract: Apparatus for accessing the power of a battery or batteries situated in the battery compartment of a first electrical device including a flexible sheet or strip member which is situated in the battery compartment of the first electrical device before the battery or batteries are inserted, a first pair of electrically conductive contact zones on opposed sheet member surfaces in aligned and electrically coupled relationship with each other, a second pair of electrically conductive contact zones on opposed sheet member surfaces in aligned and electrically coupled relationship with each other and electrically insulated from the contact zones of the first pair, and conductors for electrically connecting the coupled and aligned contact zones of the first pair and the coupled and aligned contact zones of the second pair into an electrical circuit for operating a second electrical device.

Abstract: This disclosure relates to a method of making a V-MOS field effect transistor which does not require the extra steps of epitaxial growth in order to form the source area of the transistor. The formation of the source area is achieved by masking the silicon substrate, opening an aperture in the mask and then etching the silicon substrate in such a manner as to undercut the mask so that the mask provides a shield to subsequent ion implanting of the source area. Both P and N type dopants can be separately implanted with different energy levels so as to form an enhanced PN junction capacitance for the device. Such a field effect transistor can be achieved without the formation of a graded dopant concentration in the channel between the source and drain areas of the transistor and is provided with enhanced source capacitance.