Patents by Inventor Mark Amman

Mark Amman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Proximity charge sensing for semiconductor detectors
    Patent number: 8552429
    Abstract: A non-contact charge sensor includes a semiconductor detector having a first surface and an opposing second surface. The detector includes a high resistivity electrode layer on the first surface and a low resistivity electrode on the high resistivity electrode layer. A portion of the low resistivity first surface electrode is deleted to expose the high resistivity electrode layer in a portion of the area. A low resistivity electrode layer is disposed on the second surface of the semiconductor detector. A voltage applied between the first surface low resistivity electrode and the second surface low resistivity electrode causes a free charge to drift toward the first or second surface according to a polarity of the free charge and the voltage. A charge sensitive preamplifier coupled to a non-contact electrode disposed at a distance from the exposed high resistivity electrode layer outputs a signal in response to movement of free charge within the detector.
    Type: Grant
    Filed: October 22, 2009
    Date of Patent: October 8, 2013
    Assignee: The Regents of the University of California
    Inventors: Paul N. Luke, Craig S. Tindall, Mark Amman
  • PROXIMITY CHARGE SENSING FOR SEMICONDUCTOR DETECTORS
    Publication number: 20100102844
    Abstract: A non-contact charge sensor includes a semiconductor detector having a first surface and an opposing second surface. The detector includes a high resistivity electrode layer on the first surface and a low resistivity electrode on the high resistivity electrode layer. A portion of the low resistivity first surface electrode is deleted to expose the high resistivity electrode layer in a portion of the area. A low resistivity electrode layer is disposed on the second surface of the semiconductor detector. A voltage applied between the first surface low resistivity electrode and the second surface low resistivity electrode causes a free charge to drift toward the first or second surface according to a polarity of the free charge and the voltage. A charge sensitive preamplifier coupled to a non-contact electrode disposed at a distance from the exposed high resistivity electrode layer outputs a signal in response to movement of free charge within the detector.
    Type: Application
    Filed: October 22, 2009
    Publication date: April 29, 2010
    Applicant: REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: PAUL N. LUKE, Craig S. Tindall, Mark Amman