Patents by Inventor Mark Anand THOMAS

Mark Anand THOMAS has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MOAT COVERAGE WITH DIELECTRIC FILM FOR DEVICE PASSIVATION AND SINGULATION
    Publication number: 20230377974
    Abstract: Techniques are described for the use of moats for isolating and singulating semiconductor devices formed on a wafer. Described techniques use dielectric films, such as an oxide-nitride film, to coat moat surfaces and provide passivation. The dielectric films may form a junction with a metal contact layer, to reduce electrical overstress that may otherwise occur in the resulting semiconductor devices. To ensure coverage of the moat surfaces, spray coating of a positive photoresist may be used.
    Type: Application
    Filed: August 3, 2023
    Publication date: November 23, 2023
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventor: Mark Anand THOMAS
  • Moat coverage with dielectric film for device passivation and singulation
    Patent number: 11764110
    Abstract: Techniques are described for the use of moats for isolating and singulating semiconductor devices formed on a wafer. Described techniques use dielectric films, such as an oxide-nitride film, to coat moat surfaces and provide passivation. The dielectric films may form a junction with a metal contact layer, to reduce electrical overstress that may otherwise occur in the resulting semiconductor devices. To ensure coverage of the moat surfaces, spray coating of a positive photoresist may be used.
    Type: Grant
    Filed: April 29, 2020
    Date of Patent: September 19, 2023
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventor: Mark Anand Thomas
  • MOAT COVERAGE WITH DIELECTRIC FILM FOR DEVICE PASSIVATION AND SINGULATION
    Publication number: 20210343594
    Abstract: Techniques are described for the use of moats for isolating and singulating semiconductor devices formed on a wafer. Described techniques use dielectric films, such as an oxide-nitride film, to coat moat surfaces and provide passivation. The dielectric films may form a junction with a metal contact layer, to reduce electrical overstress that may otherwise occur in the resulting semiconductor devices. To ensure coverage of the moat surfaces, spray coating of a positive photoresist may be used.
    Type: Application
    Filed: April 29, 2020
    Publication date: November 4, 2021
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventor: Mark Anand THOMAS