Patents by Inventor Mark B. Knaster

Mark B. Knaster has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4717431
    Abstract: Nickel-free aqueous phosphating compositions containing zinc ions, cobalt ions, phosphate ions, and at least two additional cations; methods for using such composition, and products of the methods.
    Type: Grant
    Filed: February 25, 1987
    Date of Patent: January 5, 1988
    Assignee: Amchem Products, Inc.
    Inventors: Mark B. Knaster, William R. Skowronek
  • Patent number: 4563216
    Abstract: Aqueous copper coating compositions, solid compositions for forming the aqueous compositions, and processes for coating the surfaces of ferrous-containing materials by contacting said surfaces with the aqueous copper coating compositions, wherein the aqueous compositions contain:(a) from about 10 to about 30 grams/liter of cupric ions;(b) from about 1 to about 10 grams/liter of chloride ions;(c) from about 0.1 to about 10 grams/liter of at least one aminepolyacetic acid compound; and(d) either(i) from about 0.01 to about 10 grams/liter of acriflavine hydrochloride and from about 0.1 to about 20 grams/liter of a polyalkylene oxide C.sub.12 -C.sub.18 alkyl or alkenyl amine; or(ii) from about 0.1 to about 10 grams/liter of the reaction product of ortho-toluidine and formaldehyde.
    Type: Grant
    Filed: June 15, 1984
    Date of Patent: January 7, 1986
    Assignee: Amchem Products, Inc.
    Inventors: Mark B. Knaster, Carmen M. Carandang
  • Patent number: 4425194
    Abstract: A photo-voltaic power cell based on a photoelectric semiconductor compound and the method of using and making the same. The semiconductor compound in the photo-voltaic power cell of the present invention can be electrolytically formed at a cathode in an electrolytic solution by causing discharge or decomposition of ions or molecules of a non-metallic component with deposition of the non-metallic component on the cathode and simultaneously providing ions of a metal component which discharge and combine with the non-metallic component at the cathode thereby forming the semiconductor compound film material thereon. By stoichiometrically adjusting the amounts of the components, or otherwise by introducing dopants into the desired amounts, an N-type layer can be formed and thereafter a P-type layer can be formed with a junction therebetween. The invention is effective in producing homojunction semiconductor materials and heterojunction semiconductor materials.
    Type: Grant
    Filed: January 21, 1983
    Date of Patent: January 10, 1984
    Assignee: Monosolar, Inc.
    Inventors: Ferdinand A. Kroger, Robert L. Rod, Ramachandra M. P. Panicker, Mark B. Knaster