Patents by Inventor Mark B. Moran
Mark B. Moran has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250055398Abstract: A dual inverter open winding machine for a vehicle. The machine may include an electric motor, a first energy source, a first inverter, a second energy source, and a second inverter. The first inverter may include a plurality of first switches independently operable between an opened position and a closed position to selectively connect and disconnect a first direct current (DC) port and a first alternating current (AC) port with one or more of the first energy source, the first inverter, and the motor. The second inverter may include a plurality of second switches independently operable between an opened position and a closed position to selectively connect and disconnect a second DC port and a second AC port with one or more of the second energy source, the second inverter, and the motor.Type: ApplicationFiled: August 7, 2023Publication date: February 13, 2025Applicant: GM GLOBAL TECHNOLOGY OPERATIONS LLCInventors: Akshay Sarin, Alan B. Martin, Brian Podczervinski, Brian A. Welchko, Suresh Gopalakrishnan, Mark J. Moran
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Patent number: 12183968Abstract: The embodiments are directed to systems having an array in intimate adjacent contact with a substrate foundation. The array has a plurality of radio frequency (RF) witness films overlain on the substrate foundation. Each RF witness film is a unit cell defined in a three-dimensional coordinate frame of reference, and is centered at an origin of the three-dimensional coordinate frame of reference. Each RF witness film in the plurality of RF witness films is equally-spaced from adjacent RF witness films.Type: GrantFiled: March 12, 2024Date of Patent: December 31, 2024Assignee: The United States of America, as represented by the Secretary of the NavyInventors: Zachary A Sechrist, Christopher G. Yelton, Mark B. Moran, Linda F. Johnson, Joseph E. Estevez, Gretchen H. Hefley
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Patent number: 11962079Abstract: The embodiments include an array in intimate adjacent contact with a substrate foundation. The array has a plurality of radio frequency (RF) witness films overlain on the substrate foundation. Each RF witness film is a unit cell defined in a three-dimensional coordinate frame of reference, and is centered at an origin of the three-dimensional coordinate frame of reference. Each RF witness film in the plurality of RF witness films is equally-spaced from adjacent RF witness films.Type: GrantFiled: January 25, 2022Date of Patent: April 16, 2024Assignee: The United States of America, as represented by the Secretary of the NavyInventors: Zachary A. Sechrist, Christopher G. Yelton, Mark B. Moran, Linda F Johnson, Joseph E. Estevez, Gretchen H. Hefley
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Patent number: 11764466Abstract: The embodiments are directed to radio frequency witness films. The embodiments include a unit cell in a three-dimensional coordinate frame of reference defined by an x-axis, a y-axis, and a z-axis. The unit cell is centered at an origin of the three-dimensional coordinate frame of reference. The unit cell includes a substrate, a first conductive layer, a dielectric layer, and a second conductive layer. The second conductive layer has at least two microstrip extensions that are perpendicular to each other in the x-y plane.Type: GrantFiled: January 25, 2022Date of Patent: September 19, 2023Assignee: The United States of America, as represented by the Secretary of the NavyInventors: Zachary A. Sechrist, Christopher G. Yelton, Mark B. Moran, Linda F. Johnson, Joseph E. Estevez, Gretchen H. Hefley
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Patent number: 8481153Abstract: An apparatus and method for imparting wide angle low reflection on any high reflective surfaces through resonant excitation of plasmonic leaky mode of a nanocavity.Type: GrantFiled: February 23, 2011Date of Patent: July 9, 2013Assignee: The United States of America as Represented by the Secretary of the NavyInventors: Simin Feng, Mark B. Moran, M. Joseph Roberts, Linda F. Johnson
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Publication number: 20120116912Abstract: A secure computer network, competitive offer system, and associated methods for facilitating the exchange of confidential information between service vendors and consumers with a reasonable expectation of privacy. In an embodiment, the methods and systems comprise using a secure computer network for facilitating the exchange of confidential information between vendors and consumer in service or service/good hybrid industries.Type: ApplicationFiled: November 7, 2011Publication date: May 10, 2012Inventor: Mark B. Moran
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Publication number: 20030201164Abstract: The invention disclosed is a process for fabrication of IR-transparent electrically conductive metal oxide, such as copper aluminum oxide (CuAlxOy), by reactive magnetron co-sputtering from high purity metal targets, such as Cu and Al targets, in an argon/oxygen g as mixture. A preferred embodiment of the present invention is a process for making a metal oxide film having electrical conductivity and infrared transparency. Preferably, the substrate is placed in an environment having argon and oxygen. The process comprises applying between about 0.15 to 10.0% oxygen partial pressure to a substrate and DC-sputter depositing a first layer of conductive metal ions onto the substrate. The first layer has a physical thickness of from about 13 to 20 angstroms. Next, Co-sputter depositing a second layer of infrared transparent delafossite metal oxide onto the first layer with the second layer having a physical thickness of from about 1500 to 5000 angstroms, thereby forming a layer pair.Type: ApplicationFiled: April 29, 2002Publication date: October 30, 2003Inventors: Linda F. Johnson, Mark B. Moran
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Patent number: 5837322Abstract: An adhering, continuous, polycrystalline diamond film is deposited on a z sulfide substrate by forming a refractory nitride interlayer directly on the substrate and then depositing diamond on the interlayer in a vacuum chamber containing a microwave activated mixture of hydrogen and a gas including carbon. The diamond film may be of optical quality and may be deposited without mechanical treatment or seeding of the zinc sulfide substrate or the nitride interlayer. However, diamond deposition may be facilitated by abrasion of the interlayer before diamond deposition.Type: GrantFiled: August 11, 1997Date of Patent: November 17, 1998Assignee: The United States of America as represented by the Secretary of the NavyInventors: Mark B. Moran, Linda F. Johnson, Karl A. Klemm
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Patent number: 5800879Abstract: An adhering, continuous diamond film of optical or semiconductor quality is deposited on a substrate by forming on the substrate a layer of a nitride and then depositing diamond on the nitride without mechanical treatment or seeding of the substrate or the nitride. A substrate of silicon or silicon carbide has been used by depositing a layer of silicon dioxide directly on the substrate and then directly depositing the nitride layer on the silicon dioxide. A polycrystalline diamond film has been deposited by heating the substrate and nitride layer in a vacuum chamber containing a microwave activated mixture of hydrogen and a gas including carbon with the nitride being a refractory nitride to withstand the temperature at which the diamond is deposited. Deposition of the diamond is facilitated by adding oxygen to the mixture after a sufficient thickness of diamond is deposited to protect the nitride layer from oxidation.Type: GrantFiled: May 16, 1991Date of Patent: September 1, 1998Inventors: Mark B. Moran, Linda F. Johnson, Karl A. Klemm
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Patent number: 5750195Abstract: In a process for depositing a diamond layer from an activated gaseous mixe including hydrogen and carbon where the process is facilitated by the inclusion of oxygen in the mixture and the diamond is deposited directly on a material, such as a nitride interlayer, which is oxidized by oxygen in the activated mixture, an activated mixture without oxygen is provided at the beginning of the depositing of the diamond layer and an activated mixture containing oxygen is provided when the diamond layer attains a thickness sufficient to protect the material from oxidation by the oxygen in the activated mixture.Type: GrantFiled: May 14, 1997Date of Patent: May 12, 1998Assignee: The United States of America as represented by the Secretary of the NavyInventor: Mark B. Moran
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Patent number: 5686152Abstract: Nucleation of diamond crystallites is initiated on electrically nonconducting substrates and on semiconducting substrates at a temperatures of 650.degree. C. or lower by providing atoms of a metal in a plasma formed by activation, as by microwave energy in a vacuum chamber, of a mixture of hydrogen and a carbon containing vapor. A continuous, adhering film of polycrystalline diamond is then grown on the substrate from the nucleated crystallites. The nucleation is effective when the substrate has a positive electric potential relative to a wall of the chamber. Positive and negative dopants may be provided in the vapor to give a semiconducting film. The nucleation and film growth are effective at the relatively low substrate temperatures so that dopant diffusion and substrate damage occurring at the usual, higher diamond film deposition temperatures are avoided.Type: GrantFiled: August 3, 1995Date of Patent: November 11, 1997Inventors: Linda F. Johnson, Karl A. Klemm, Mark B. Moran
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Patent number: 5654044Abstract: A continuous, adhering film of polycrystalline diamond is grown on a grape substrate from diamond crystallites nucleated at a metal layer on the substrate when subjected to a microwave activated plasma of hydrogen and a carbon containing gas. Pyrolytic graphite and cured graphite adhesive are effective and other forms of graphite may be effective. Effective metals are chromium, nickel, and titanium. Diamond nucleation apparently occurs at crystallites of metal carbides nucleated by carbon from the plasma so that other carbide forming metals may be effective. Metal not nucleated as the carbide is, apparently, etched away by the plasma; and the diamond film is effectively deposited directly on the graphite since the diamond film is not contaminated by the metal even at the graphite interface where carbide contamination was less than 0.2 percent from a 2500 .ANG. chromium film. The diamond film deposition occurs at substrate temperatures as low as 650.degree. C.Type: GrantFiled: August 29, 1995Date of Patent: August 5, 1997Assignee: The United States of America as represented by the Secretary of the NavyInventors: Mark B. Moran, Karl A. Klemm, Linda F. Johnson
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Patent number: 5516388Abstract: Preexisting elements are bonded by placing a sol-gel solution between juxtapositioned surfaces of the elements and sintering a gel formed from the solution at a temperature, which does not damage the elements, to form a sol-gel derived bonding material. The elements may be constructed of glasses, metals, infrared transmissive materials, or diamond, and bonded by sintering at about 300.degree. C. The bonding material may be resistant to high temperature and may have properties, such as refractive index, selected by varying the composition of the sol-gel solution. Optical and electronic articles are constructed by preparing a mandrel conforming to a substrate, which may be of arbitrary shape; depositing a coating on the mandrel; bonding the coating to the substrate with a sintered sol-gel; and removing the mandrel, as by etching.Type: GrantFiled: September 11, 1994Date of Patent: May 14, 1996Assignee: The United States of America as represented by the Secretary of the NavyInventors: Mark B. Moran, Linda F. Johnson
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Patent number: 5472787Abstract: Coatings for a diamond surface of an optical element control reflections and oxidation at the surface. Transmissive element coatings effective in the infrared and at up to 800.degree. C. have a first layer of amorphous hydrogenated silicon deposited directly on the diamond and have a second layer of aluminum nitride, yttrium oxide, hafnium oxide or other refractory oxide deposited directly on the first layer. The first layer may be relatively thin and for adhesion only with the second layer constructed of an oxide and having a thickness selected to control reflection, or the thicknesses of both layers may be selected together to control reflection with the proportion of hydrogen in the first layer varied to select its refractive index.Type: GrantFiled: August 11, 1992Date of Patent: December 5, 1995Assignee: The United States of America as represented by the Secretary of the NavyInventors: Linda F. Johnson, Karl A. Klemm, Mark B. Moran
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Patent number: 5169676Abstract: In depositing an adhering, continuous, polycrystalline diamond film of optical or semiconductor quality on a substrate, as by forming on the substrate a layer of a refractory nitride interlayer and depositing diamond on the interlayer without mechanical treatment or seeding of the substrate or the interlayer, the substrate is heated in a vacuum chamber containing a microwave activated mixture of hydrogen and a gas including carbon, and the size of deposited diamond crystallites and their rate of deposition selectively varied by a bias voltage applied to the substrate.Type: GrantFiled: May 16, 1991Date of Patent: December 8, 1992Assignee: The United States of America as represented by the Secretary of the NavyInventors: Mark B. Moran, Linda F. Johnson, Karl A. Klemm
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Patent number: H483Abstract: A binary solvent for liquid dye laser systems comprising a surfactant having a hydrophobic end and a hydrophilic end in a viscous polar solvent provides a method of improving the output, efficiency and lifetime of laser dyes, particularly in non-flowing liquid dye laser systems.Type: GrantFiled: April 3, 1987Date of Patent: June 7, 1988Assignee: The United States of America as represented by the Secretary of the NavyInventors: Mark B. Moran, C. Denton Marrs
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Patent number: H1792Abstract: In depositing an adhering, continuous, polycrystalline diamond film on a substrate by forming a refractory nitride interlayer on the substrate and depositing diamond on the interlayer in a vacuum chamber containing a microwave activated mixture of hydrogen and a gas including carbon, the crystal orientation of the deposited diamond, <111> or <100>, is selected by controlling the pressure in the chamber. Preferably, relatively higher microwave power is utilized at higher pressures.Type: GrantFiled: July 14, 1997Date of Patent: April 6, 1999Assignee: The United States of America as represented by the Secretary of the NavyInventors: Mark B. Moran, Linda F. Johnson, Karl A. Klemm