Abstract: A display panel is formed using a single crystal thin-film transistors that are transferred to substrates for display fabrication. Pixel arrays form light valves or switches that can be fabricated with control electronics in the thin-film material prior to transfer. The resulting circuit panel is then incorporated into a projection display system with a light emitting or liquid crystal material to provide the desired light valve.

Abstract: Circuit modules including complex multi-function circuitry on common module substrates using circuit tiles of silicon thin-films which are transferred, interconnected and packaged. The modules include integrated transfer/interconnects with extremely high density and complexity with large-area active-matrix liquid crystal displays and on-board drivers and logic in glass-based modules.

Abstract: A display panel is formed using a single crystal thin-film transistors that are transferred to substrates for display fabrication. Pixel arrays form light valves or switches that can be fabricated with control electronics in the thin-film material prior to transfer. The resulting circuit panel is then incorporated into a projection display system with a light emitting or liquid crystal material to provide the desired light valve.

Abstract: Light emitting diodes (LEDs) and LED bars and LED arrays formed of semiconductive material, such as III-V, and particularly AlGaAs/GaAs material, are formed in very thin structures using organometallic vapor deposition (OMCVD). Semiconductor p-n junctions are formed as deposited using carbon as the p-type impurity dopant. Various lift-off methods are described which permit back side processing when the growth substrate is removed and also enable device registration for LED bars and arrays to be maintained.

Abstract: A display panel is formed using a single crystal thin-film transistors that are transferred to substrates for display fabrication. Pixel arrays form light valves or switches that can be fabricated with color filter elements over the pixel elements. The resulting circuit panel is then incorporated into a color projection display system with a light emitting or liquid crystal material to provide the desired light valve.

Abstract: A display panel is formed using a single crystal thin-film material that may be transferred to substrates for display fabrication. Pixel arrays form light valves or switches that can be fabricated with control electronics in the thin-film material prior to transfer. The resulting circuit panel is then incorporated into a display panel with a light emitting or liquid crystal material to provide the desired display.

Abstract: An eye tracking system is disclosed which is comprised of an eye tracking module formed of a display joined to a photodetector array. Each pixel in the display is aligned with a corresponding photodetector. An image generated by the display is projected onto a viewing screen or toward a viewer. Axial light rays from the display pixels are reflected by the eye and detected by a respective photodetector which generates an electrical signal indicative of eye position.

Abstract: A slide assembly adapted for use with a projector body, having a projector body, having a light source, an optical system and a chamber in which an image forming element can be placed. The slide assembly has a housing adapted to be positioned over the slide projector body with an active matrix display slide movably mounted to housing with a storage position in the housing and an operating position outside the housing. In the operating position the display slide is positioned in a slide projector chamber for projection of an image onto an external viewing surface.

Abstract: A display panel is formed using a single crystal thin-film material that may be transferred to substrates for display fabrication. Pixel arrays form light valves or switches that can be fabricated with control electronics in the thin-film material prior to transfer. The resulting circuit panel is then incorporated into a display panel with a light emitting or liquid crystal material to provide the desired display.

Abstract: Light emitting diodes (LEDs) and LED bars and LED arrays formed of semiconductive material, such as III-V, and particularly AlGaAs/GaAs material, are formed in very thin structures using organometallic vapor deposition (OMCVD). Semiconductor p-n junctions are formed as deposited using carbon as the p-type impurity dopant. Various lift-off methods are described which permit back side processing when the growth substrate is removed and also enable device registration for LED bars and arrays to be maintained.

Abstract: The invention relates to device processing, packaging and interconnects that will yield integrated electronic circuitry of high density and complexity. Processes include the formation of complex multi-function circuitry on common module substrates using circuit tiles of silicon thin-films which are transferred, interconnected and packaged. Circuit modules using integrated transfer/interconnect processes compatible with extremely high density and complexity provide large-area active-matrix displays with on-board drivers and logic in modules.

Abstract: A ring laser is disclosed including a semiconductor single crystal external ring resonator cavity having a plurality of reflecting surfaces defined by the planes of the crystal and establishing a closed optical path; and a discrete laser medium disposed in said semiconductor single crystal external ring resonator cavity for generating coherent light in the cavity.

Abstract: A high temperature Schottky barrier diode utilizing a refractory metal with a p-type gallium arsenide wafer can be used as a by-pass diode for solar cell arrays. The diode structure can be integrally formed with a solar cell having a high temperative metallized contact grid.

Abstract: A metallization system for contacting semiconductor materials employed in high temperature applications that is thermally stable. The system can be utilized in the fabrication of electronic devices such as diodes, lasers, transistors, solar cells, and integrated circuits comprised of such devices.

Abstract: An improved patterning process, useful for the metallization of highly efficient photovoltaic cells, the formation of X-ray lithography masks in the sub half-micron range, and in the fabrication of VLSI and MMIC devices, is disclosed. The improved patterning process includes the steps of providing a substrate with a photoactive layer, patterning the photoactive layer with an inclined profile, depositing on both the substrate and the patterned photoactive layer a layer of disjointed metal such that the thickness of the metal layer exceeds that of the patterned photoactive layer and that the metal layer deposited on the substrate is formed with walls normal to the surface of the substrate. Preferably, the deposition of the disjointed metal layer is effected by evaporative metallization in a direction normal to the surface of the substrate. The deposited metal layer on the substrate is characterized by a high aspect ratio, with a rectangular cross section.

Abstract: A passivated deep p/n junction obtained by ion implantation is disclosed. The passivated deep p/n junction is formed in a wafer, preferably a silicon wafer, thus providing an emitter region that is both lightly doped and extending to a depth of about one micrometer. The emitter region in turn is provided with a surface layer so as to reduce surface recombination. Preferably, the surface layer is a silicon oxide layer of about 0.01 micrometer thickness. The p/n junction is obtained by ion implantation whereby the dopant is introduced at room temperature and then distributed thermally. The surface layer preferably is formed near the end of the thermal distribution by admitting a small amount of dry oxygen to a gas stream, and passing the gas stream along the surface of the wafer.

Abstract: A solar cell of novel construction is disclosed featuring the formation of a p-n junction at its rear surface. This allows for a reduction in series resistance and optimization of the p-n junction. The solar cell has a metallic front contact and is lightly doped to reduce contact resistance at the interface between the front contact and the front surface of the cell. The solar cell preferably is formed of either n-type or p-type silicon, with the p-n junction preferably formed therein by ion implantation. Preferably, the solar cell is about 50 micrometers thick and, possesses a conversion efficiency of at least 15% over an input intensity range of from about one to about 1,000 suns. The solar cell is particularly useful for concentrator solar cells intended for operation at high intensity (in excess of 500 suns).

Abstract: A process of encapsulating solar cells in which a semiconductor wafer first is processed into an uncut cell. An interconnect strip is secured to the front contact of the cell. A coverglass plate, provided with a suitable coating, is next bonded to the front surface of the cell. Finally, the bonded assembly of cell and coverglass plate is cut to final size as a unit. The interconnect strip preferably is folded onto the back surface of the cell either during or prior to the cutting operation.