Patents by Inventor Mark Barnell

Mark Barnell has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Diffusive memristor and device for synaptic emulator
    Patent number: 10741759
    Abstract: A diffusive memristor device and an electronic device for emulating a biological synapse are disclosed. The diffusive memristor device includes a bottom electrode, a top electrode formed opposite the bottom electrode, and a dielectric layer disposed between the top electrode and the bottom electrode. The dielectric layer comprises silver doped silicon oxynitride (SiOxNy:Ag). In an alternate implementation, the dielectric layer comprises silver doped silicon oxide (Ag:SiO2). An electronic synapse emulation device is also disclosed. The synapse emulation device includes a diffusive memristor device, a drift memristor device connected in series with the diffusive memristor device, a first voltage pulse generator connected to the diffusive memristor device, and a second voltage pulse generator connected to the drift memristor device. Application of a signal from one of the first voltage pulse generator or the second voltage pulse generator allows the synapse emulation device to exhibit long-term plasticity.
    Type: Grant
    Filed: September 26, 2018
    Date of Patent: August 11, 2020
    Assignee: University of Massachusetts
    Inventors: Jianhua Yang, Qiangfei Xia, Mark McLean, Qing Wu, Mark Barnell
  • Diffusive Memristor and Device for Synaptic Emulator
    Publication number: 20200227635
    Abstract: A diffusive memristor device and an electronic device for emulating a biological synapse are disclosed. The diffusive memristor device includes a bottom electrode, a top electrode formed opposite the bottom electrode, and a dielectric layer disposed between the top electrode and the bottom electrode. The dielectric layer comprises silver doped silicon oxynitride (SiOxNy:Ag). In an alternate implementation, the dielectric layer comprises silver doped silicon oxide (Ag:SiO2). An electronic synapse emulation device is also disclosed. The synapse emulation device includes a diffusive memristor device, a drift memristor device connected in series with the diffusive memristor device, a first voltage pulse generator connected to the diffusive memristor device, and a second voltage pulse generator connected to the drift memristor device. Application of a signal from one of the first voltage pulse generator or the second voltage pulse generator allows the synapse emulation device to exhibit long-term plasticity.
    Type: Application
    Filed: September 26, 2018
    Publication date: July 16, 2020
    Inventors: Jianhua Yang, Qiangfei Xia, Mark McLean, Qing Wu, Mark Barnell
  • Method and apparatus for performing signal processing on a crossbar array of resistive memory devices
    Patent number: 9455030
    Abstract: Invention provides an apparatus and method for performing signal processing on a crossbar array of resistive memory devices. The invention is implemented using one or multiple crossbar arrays of resistive memory devices in conjunction with devices for converting input real number representations to voltage waveforms, devices for converting current waveforms into voltage waveforms, and devices for converting voltage waveforms to real numbers outputs.
    Type: Grant
    Filed: December 22, 2015
    Date of Patent: September 27, 2016
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventors: Qing Wu, Richard Linderman, Mark Barnell, Yiran Chen, Hai Li