Abstract: Methods and apparatus are provided for manufacturing a medical device. An implantable medical device includes a semiconductor substrate, an epitaxial layer, and a power transistor. The epitaxial layer overlies the semiconductor substrate. The power transistor is formed in the epitaxial layer and includes a first electrode, a control electrode, and a second electrode. The power transistor has a voltage breakdown greater than 100 volts. The current flow of the power transistor is vertical through the epitaxial layer to the semiconductor substrate. A backside contact couples to the first electrode of the power transistor. A method of manufacturing a medical device includes a power transistor formed in an epitaxial layer overlying a semiconductor substrate. A deep trench is etched through the epitaxial layer exposing the semiconductor substrate. A first electrode contact region couples to an exposed area of the semiconductor substrate in the deep trench.

Abstract: A system for roofing a substructure has a plurality of roof panels, a plurality of support members and a plurality of cap members. The roof panels each have a horizontal channel section bounded on a pair of opposing side edges by side flanges, with an upper end of each side flange bent to provide a groove opening outwardly laterally from the panel. The support members each have a pair of oppositely extending base flanges and a pair of oppositely extending top flanges, the base flanges and top flanges being positioned along a vertical web member. The top flanges are adapted to be received in the groove of one of a pair of adjacent roof panels and one of the base flanges of each support member is adapted to fasten the support member to the substructure. The cap members have side walls to retain the top flanges in the grooves without fastening the roof panel to the support member, thereby allowing some relative movement upon deflection of the roof panel.