Abstract: A drawing unit with a segment reciprocating die for drawing metal segments comprises a tensioning device arranged to advance a shaped specimen through an array of dies that create a shaped orifice with the spacing formed between the dies. These dies segments act under the influence of a powered unit to move in a reciprocating motion that causes the spacings between segments to increase and decrease synchronously thereby shaping the metal segments.

Abstract: A method of forming a plasma enhanced deposited oxide film on a substrate includes introducing into a chamber containing the substrate silane gas and a dopant gas such as phosphine. The chamber is pressurized and energy is applied to create a plasma. The energy may be a dual frequency energy. The gas rates and pressure are selected to produce a plasma enhanced deposited oxide film on a substrate having a Si—O—Si bond peak absorbance in the IR spectrum of at least 1092 cm?1.

Abstract: A method of forming a plasma enhanced deposited oxide film on a substrate includes introducing into a chamber containing the substrate silane gas and a dopant gas such as phosphine. The chamber is pressurized and energy is applied to create a plasma. The energy may be a dual frequency energy. The gas rates and pressure are selected to porduce a plasma enhanced deposited oxide film on a substrate having a Si—O—Si bond peak absorbance in the IR spectrum of at least 1092 cm?1.

Abstract: An improved memory cell layout (54) is formed including a trench cell (60) formed in a semiconductor substrate (58). The memory cell layout (54) includes a bitline (56) and a wordline (62) for storing and accessing charge. The charge is stored on a capacitor formed from a conductor (68), an insulating region (70) and a semiconductor substrate (58). Bitline (56) is primarily tangential to a trench cell (60), or may surround the periphery thereof. A wordline (62) overlies trench cell (60) and extends therein, and further may be formed of a width narrower than trench cell (60).