Abstract: Light deflection prism for altering a field of view of a camera of a device comprising a surface with a camera aperture region defining an actual light entrance angular cone projecting from the surface. A method comprises disposing a first surface of a light deflection prism on the surface so as to overlap the angular cone; internally reflecting a central ray, entering the prism under a normal incidence angle through a second surface, at a third surface of the prism towards the first surface under a normal angle of incidence such that the central ray enters the prism at an angle of less than 90° relative to a normal of the device surface and such that a ray at one boundary of an effective light entrance angular cone defined as a result of the light reflection at the third surface is substantially parallel to the device surface.

Abstract: Light deflection prism for altering a field of view of a camera of a device comprising a surface with a camera aperture region defining an actual light entrance angular cone projecting from the surface. A method comprises disposing a first surface of a light deflection prism on the surface so as to overlap the angular cone; internally reflecting a central ray, entering the prism under a normal incidence angle through a second surface, at a third surface of the prism towards the first surface under a normal angle of incidence such that the central ray enters the prism at an angle of less than 90° relative to a normal of the device surface and such that a ray at one boundary of an effective light entrance angular cone defined as a result of the light reflection at the third surface is substantially parallel to the device surface.

Abstract: The present disclosure relates to a method for forming a nanostencil mask. The method involves irradiating a substrate to increase resistivity of a plurality of first portions of the substrate relative to one or more second portions of the substrate surrounding the plurality of first portions. The method also involves passing a current through the substrate, the current preferentially passing through and weakening the one or more second portions of the substrate. This preference is a result of the higher resistivity in the one or more first portions of the substrate causing the current to pass through the relatively lower resistivity second portion(s). The method also involves subjecting the substrate to a material removal process, the material removal process preferentially removing the weakened one or more second portions of the substrate and thereby forming a nanostencil mask comprising the plurality of first portions of the substrate.

Abstract: A method for fabricating a liquid crystal (LC) device and large area LC devices is provided. The method includes forming a LC layer and forming a coated silicon wafer on at least one surface of the LC layer. The coated silicon wafer includes a sacrificial layer for providing structural strength during fabrication of the LC device and a thin coating layer serving as an external light transmissive layer, and the coated silicon wafer is formed such that the thin coating layer is formed on the LC layer and the sacrificial layer is formed on the thin coating layer. The method also includes fabricating the LC device and selectively removing at least a portion of the sacrificial layer of the coated silicon wafer to expose at least a portion of the thin coating layer to serve as an external layer of the LC device.

Abstract: The present disclosure relates to a method for forming a nanostencil mask. The method involves irradiating a substrate to increase resistivity of a plurality of first portions of the substrate relative to one or more second portions of the substrate surrounding the plurality of first portions. The method also involves passing a current through the substrate, the current preferentially passing through and weakening the one or more second portions of the substrate. This preference is a result of the higher resistivity in the one or more first portions of the substrate causing the current to pass through the relatively lower resistivity second portion(s). The method also involves subjecting the substrate to a material removal process, the material removal process preferentially removing the weakened one or more second portions of the substrate and thereby forming a nanostencil mask comprising the plurality of first portions of the substrate.

Abstract: A method for fabricating a liquid crystal (LC) device and large area LC devices is provided. The method includes forming a LC layer and forming a coated silicon wafer on at least one surface of the LC layer. The coated silicon wafer includes a sacrificial layer for providing structural strength during fabrication of the LC device and a thin coating layer serving as an external light transmissive layer, and the coated silicon wafer is formed such that the thin coating layer is formed on the LC layer and the sacrificial layer is formed on the thin coating layer. The method also includes fabricating the LC device and selectively removing at least a portion of the sacrificial layer of the coated silicon wafer to expose at least a portion of the thin coating layer to serve as an external layer of the LC device.